Inventor · disambiguated record
Jayavel Pachamuthu
Also filed as: PACHAMUTHU JAYAVEL
108 granted patents·6 pending applications·2,923 citations·filing 2010–2024
99Inventor score
Files withSANDISK TECHNOLOGIES INC63SANDISK TECHNOLOGIES LLC36WESTERN DIGITAL TECH INC11PACHAMUTHU JAYAVEL3PURAYATH VINOD R1
Top patents by PatentIndex Score
114 records- 0199US10475879B1Support pillar structures for leakage reduction in a three-dimensional memory device and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 12, 2019·46 cites·20 claims
- 0299US9659956B1Three-dimensional memory device containing source select gate electrodes with enhanced electrical isolationSANDISK TECHNOLOGIES INC·Filed 2016·Granted May 23, 2017·108 cites·13 claims
- 0399US9449985B1Memory cell with high-k charge trapping layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·41 cites·29 claims
- 0499US9449982B2Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·71 cites·20 claims
- 0599US9425299B1Three-dimensional memory device having a heterostructure quantum well channelSANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 23, 2016·50 cites·22 claims
- 0699US9230987B2Multilevel memory stack structure and methods of manufacturing the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 5, 2016·126 cites·38 claims
- 0799US9230974B1Methods of selective removal of blocking dielectric in NAND memory stringsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·56 cites·39 claims
- 0899US9230973B2Methods of fabricating a three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·207 cites·28 claims
- 0999US9230980B2Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·50 cites·12 claims
- 1099US9023719B2High aspect ratio memory hole channel contact formationSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 5, 2015·137 cites·36 claims
- 1199US8946023B2Method of making a vertical NAND device using sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2013·Granted Feb 3, 2015·96 cites·20 claims
- 1298US10381434B1Support pillar structures for leakage reduction in a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·40 cites·12 claims
- 1398US9917093B2Inter-plane offset in backside contact via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 13, 2018·41 cites·17 claims
- 1498US9842851B2Three-dimensional memory devices having a shaped epitaxial channel portionSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 12, 2017·28 cites·12 claims
- 1598US9698152B2Three-dimensional memory structure with multi-component contact via structure and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 4, 2017·35 cites·13 claims
- 1698US9627403B2Multilevel memory stack structure employing support pillar structuresSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 18, 2017·69 cites·25 claims
- 1798US9524976B2Method of integrating select gate source and memory hole for three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 20, 2016·27 cites·32 claims
- 1898US9443861B1Fluorine-blocking insulating spacer for backside contact structure of three-dimensional memory structuresSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 13, 2016·38 cites·19 claims
- 1998US9356031B2Three dimensional NAND string memory devices with voids enclosed between control gate electrodesSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 31, 2016·61 cites·4 claims
- 2098US9230979B1High dielectric constant etch stop layer for a memory structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·77 cites·37 claims
- 2198US9177966B1Three dimensional NAND devices with air gap or low-k coreSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 3, 2015·92 cites·37 claims
- 2298US8987089B1Methods of fabricating a three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Mar 24, 2015·50 cites·18 claims
- 2397US10115459B1Multiple liner interconnects for three dimensional memory devices and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·34 cites·19 claims
- 2497US10103161B2Offset backside contact via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 16, 2018·29 cites·24 claims
- 2597US10014316B2Three-dimensional memory device with leakage reducing support pillar structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 3, 2018·35 cites·23 claims
- 2697US9934872B2Erase stress and delta erase loop count methods for various fail modes in non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2014·Granted Apr 3, 2018·44 cites·26 claims
- 2797US9666594B2Multi-charge region memory cells for a vertical NAND deviceSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 30, 2017·35 cites·28 claims
- 2897US9559117B2Three-dimensional non-volatile memory device having a silicide source line and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 31, 2017·20 cites·10 claims
- 2997US9524981B2Three dimensional memory device with hybrid source electrode for wafer warpage reductionSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 20, 2016·22 cites·29 claims
- 3097US9496274B2Three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 15, 2016·27 cites·25 claims
- 3197US9478495B1Three dimensional memory device containing aluminum source contact via structure and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 25, 2016·82 cites·27 claims
- 3297US9460931B2High aspect ratio memory hole channel contact formationPACHAMUTHU JAYAVEL·Filed 2014·Granted Oct 4, 2016·58 cites·17 claims
- 3397US9455263B2Three dimensional NAND device with channel contacting conductive source line and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Sep 27, 2016·58 cites·14 claims
- 3497US9437606B2Method of making a three-dimensional memory array with etch stopSANDISK TECHNOLOGIES INC·Filed 2013·Granted Sep 6, 2016·38 cites·16 claims
- 3597US9287290B13D memory having crystalline silicon NAND string channelSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 15, 2016·27 cites·14 claims
- 3696US9941293B1Select transistors with tight threshold voltage in 3D memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 10, 2018·12 cites·19 claims
- 3796US9881929B1Multi-tier memory stack structure containing non-overlapping support pillar structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jan 30, 2018·110 cites·15 claims
- 3896US9876025B2Methods for manufacturing ultrathin semiconductor channel three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 23, 2018·16 cites·34 claims
- 3996US9831118B1Reducing neighboring word line in interference using low-k oxideSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 28, 2017·19 cites·20 claims
- 4096US9799671B2Three-dimensional integration schemes for reducing fluorine-induced electrical shortsSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 24, 2017·37 cites·7 claims
- 4196US9754958B2Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 5, 2017·17 cites·13 claims
- 4296US9666590B2High stack 3D memory and method of makingSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 30, 2017·17 cites·19 claims
- 4396US9520406B2Method of making a vertical NAND device using sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 13, 2016·26 cites·11 claims
- 4496US9368509B2Three-dimensional memory structure having self-aligned drain regions and methods of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 14, 2016·27 cites·8 claims
- 4596US9368510B1Method of forming memory cell with high-k charge trapping layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 14, 2016·15 cites·22 claims
- 4696US9209031B2Metal replacement process for low resistance source contacts in 3D NANDSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 8, 2015·27 cites·20 claims
- 4796US9099496B2Method of forming an active area with floating gate negative offset profile in FG NAND memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 4, 2015·31 cites·34 claims
- 4895US10943662B1Different word line programming orders in non-volatile memory for error recoveryWESTERN DIGITAL TECH INC·Filed 2019·Granted Mar 9, 2021·14 cites·18 claims
- 4995US10128257B2Select transistors with tight threshold voltage in 3D memorySANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 13, 2018·9 cites·20 claims
- 5095US10121794B2Three-dimensional memory device having epitaxial germanium-containing vertical channel and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 6, 2018·33 cites·18 claims
Showing the top 50 of 114 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →