Inventor · disambiguated record
Jamal Ramdani
Also filed as: RAMDANI JAMAL
101 granted patents·27 pending applications·4,002 citations·filing 1995–2023
99Inventor score
Files withMOTOROLA INC65POWER INTEGRATIONS INC29NAT SEMICONDUCTOR CORP17RAMDANI JAMAL7FREESCALE SEMICONDUCTOR INC3
Top patents by PatentIndex Score
128 records- 0199US6709989B2Method for fabricating a semiconductor structure including a metal oxide interface with siliconMOTOROLA INC·Filed 2001·Granted Mar 23, 2004·686 cites·6 claims
- 0299US6080690ATextile fabric with integrated sensing device and clothing fabricated thereofMOTOROLA INC·Filed 1998·Granted Jun 27, 2000·404 cites·20 claims
- 0398US6501121B1Semiconductor structureMOTOROLA INC·Filed 2000·Granted Dec 31, 2002·232 cites·22 claims
- 0498US6493497B1Electro-optic structure and process for fabricating sameMOTOROLA INC·Filed 2000·Granted Dec 10, 2002·238 cites·45 claims
- 0597US9722063B1Protective insulator for HFET devicesPOWER INTEGRATIONS INC·Filed 2016·Granted Aug 1, 2017·27 cites·27 claims
- 0697US9306014B1High-electron-mobility transistorsPOWER INTEGRATIONS INC·Filed 2014·Granted Apr 5, 2016·34 cites·26 claims
- 0796US5741724AMethod of growing gallium nitride on a spinel substrateMOTOROLA INC·Filed 1996·Granted Apr 21, 1998·245 cites·22 claims
- 0895US8785305B2Backside stress compensation for gallium nitride or other nitride-based semiconductor devicesRAMDANI JAMAL·Filed 2010·Granted Jul 22, 2014·20 cites·20 claims
- 0995US8633094B2GaN high voltage HFET with passivation plus gate dielectric multilayer structureRAMDANI JAMAL·Filed 2011·Granted Jan 21, 2014·29 cites·23 claims
- 1095US7687887B1Method of forming a self-aligned bipolar transistor structure using a selectively grown emitterNAT SEMICONDUCTOR CORP·Filed 2006·Granted Mar 30, 2010·39 cites·20 claims
- 1195US6392257B1Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the sameMOTOROLA INC·Filed 2000·Granted May 21, 2002·165 cites·6 claims
- 1294US6291319B1Method for fabricating a semiconductor structure having a stable crystalline interface with siliconMOTOROLA INC·Filed 1999·Granted Sep 18, 2001·148 cites·40 claims
- 1392US8507947B2High quality GaN high-voltage HFETS on siliconRAMDANI JAMAL·Filed 2011·Granted Aug 13, 2013·12 cites·9 claims
- 1492US6583034B2Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structureMOTOROLA INC·Filed 2000·Granted Jun 24, 2003·74 cites·7 claims
- 1591US8928037B2Heterostructure power transistor with AlSiN passivation layerPOWER INTEGRATIONS INC·Filed 2013·Granted Jan 6, 2015·10 cites·23 claims
- 1691US6555946B1Acoustic wave device and process for forming the sameMOTOROLA INC·Filed 2000·Granted Apr 29, 2003·54 cites·26 claims
- 1790US7211852B2Structure and method for fabricating GaN devices utilizing the formation of a compliant substrateFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 1, 2007·14 cites·20 claims
- 1889US11373873B2Asymmetrical plug technique for GaN devicesPOWER INTEGRATIONS INC·Filed 2020·Granted Jun 28, 2022·2 cites·19 claims
- 1988US10204791B1Contact plug for high-voltage devicesPOWER INTEGRATIONS INC·Filed 2017·Granted Feb 12, 2019·4 cites·12 claims
- 2088US10121885B2Protective insulator for HFET devicesPOWER INTEGRATIONS INC·Filed 2017·Granted Nov 6, 2018·3 cites·17 claims
- 2188US9543402B1Integrated high performance lateral schottky diodePOWER INTEGRATIONS INC·Filed 2015·Granted Jan 10, 2017·6 cites·14 claims
- 2288US7067856B2Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the sameFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 27, 2006·26 cites·9 claims
- 2388US6319730B1Method of fabricating a semiconductor structure including a metal oxide interfaceMOTOROLA INC·Filed 1999·Granted Nov 20, 2001·94 cites·23 claims
- 2488US6026111AVertical cavity surface emitting laser device having an extended cavityMOTOROLA INC·Filed 1997·Granted Feb 15, 2000·73 cites·25 claims
- 2588US5943357ALong wavelength vertical cavity surface emitting laser with photodetector for automatic power control and method of fabricationMOTOROLA INC·Filed 1997·Granted Aug 24, 1999·72 cites·25 claims
- 2688US5903586ALong wavelength vertical cavity surface emitting laserMOTOROLA INC·Filed 1997·Granted May 11, 1999·77 cites·15 claims
- 2788US5835521ALong wavelength light emitting vertical cavity surface emitting laser and method of fabricationMOTOROLA INC·Filed 1997·Granted Nov 10, 1998·65 cites·18 claims
- 2887US10665463B2Asymmetrical plug technique for GaN devicesPOWER INTEGRATIONS INC·Filed 2018·Granted May 26, 2020·3 cites·10 claims
- 2987US9691755B2Static discharge systemPOWER INTEGRATIONS INC·Filed 2016·Granted Jun 27, 2017·4 cites·14 claims
- 3087US6121068ALong wavelength light emitting vertical cavity surface emitting laser and method of fabricationMOTOROLA INC·Filed 1998·Granted Sep 19, 2000·59 cites·10 claims
- 3186US6241821B1Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with siliconMOTOROLA INC·Filed 1999·Granted Jun 5, 2001·45 cites·22 claims
- 3286US5838707AUltraviolet/visible light emitting vertical cavity surface emitting laser and method of fabricationMOTOROLA INC·Filed 1996·Granted Nov 17, 1998·67 cites·30 claims
- 3385US8703561B2High quality GaN high-voltage HFETs on siliconPOWER INTEGRATIONS INC·Filed 2013·Granted Apr 22, 2014·4 cites·13 claims
- 3485US6224669B1Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with siliconMOTOROLA INC·Filed 2000·Granted May 1, 2001·35 cites·36 claims
- 3584US11075294B2Protective insulator for HFET devicesPOWER INTEGRATIONS INC·Filed 2020·Granted Jul 27, 2021·1 cites·14 claims
- 3684US10629719B2Protective insulator for HFET devicesPOWER INTEGRATIONS INC·Filed 2018·Granted Apr 21, 2020·2 cites·8 claims
- 3784US9425195B2Static discharge systemPOWER INTEGRATIONS INC·Filed 2015·Granted Aug 23, 2016·3 cites·24 claims
- 3884US9245879B2Static discharge systemKUDYMOV ALEXEY·Filed 2012·Granted Jan 26, 2016·6 cites·24 claims
- 3984US6061380AVertical cavity surface emitting laser with doped active region and method of fabricationMOTOROLA INC·Filed 1997·Granted May 9, 2000·58 cites·27 claims
- 4084US5898722ADual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabricationMOTOROLA INC·Filed 1997·Granted Apr 27, 1999·57 cites·16 claims
- 4184US2024030337A1Protective insulator for hfet devicesPOWER INTEGRATIONS INC·Filed 2023·Application pending·0 cites
- 4283US8940620B2Composite wafer for fabrication of semiconductor devicesKOUDYMOV ALEXEI·Filed 2011·Granted Jan 27, 2015·9 cites·14 claims
- 4383US8624260B2Enhancement-mode GaN MOSFET with low leakage current and improved reliabilityRAMDANI JAMAL·Filed 2010·Granted Jan 7, 2014·5 cites·20 claims
- 4483US5732103ALong wavelength VCSELMOTOROLA INC·Filed 1996·Granted Mar 24, 1998·52 cites·24 claims
- 4582US5956363ALong wavelength vertical cavity surface emitting laser with oxidation layers and method of fabricationMOTOROLA INC·Filed 1997·Granted Sep 21, 1999·53 cites·15 claims
- 4681US7105866B2Heterojunction tunneling diodes and process for fabricating sameFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Sep 12, 2006·24 cites·8 claims
- 4780US7566626B1System and method for providing a fully self aligned bipolar transistor using modified cavity formation to optimize selective epitaxial growthNAT SEMICONDUCTOR CORP·Filed 2007·Granted Jul 28, 2009·7 cites·20 claims
- 4879US5943359ALong wavelength VCSELMOTOROLA INC·Filed 1997·Granted Aug 24, 1999·45 cites·15 claims
- 4978US9525055B2High-electron-mobility transistorsPOWER INTEGRATIONS INC·Filed 2016·Granted Dec 20, 2016·2 cites·13 claims
- 5078US7485538B1High performance SiGe HBT with arsenic atomic layer dopingNAT SEMICONDUCTOR CORP·Filed 2006·Granted Feb 3, 2009·6 cites·21 claims
Showing the top 50 of 128 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Jamal Ramdani files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →