Inventor · disambiguated record
Jae-Sung Roh
Also filed as: ROH JAE-SUNG
42 granted patents·8 pending applications·872 citations·filing 1994–2022
98Inventor score
Files withHYNIX SEMICONDUCTOR INC25LG SEMICON CO LTD7GOLD STAR ELECTRONICS3HYUNDAI ELECTRONICS IND3JUSUNG ENG CO LTD2
Top patents by PatentIndex Score
50 records- 0198US7910452B2Method for fabricating a cylinder-type capacitor utilizing a connected ring structureHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 22, 2011·325 cites·30 claims
- 0297US7074668B1Capacitor of semiconductor device and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Jul 11, 2006·144 cites·15 claims
- 0393US7835134B2Capacitor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Nov 16, 2010·19 cites·12 claims
- 0489US5783253AMethod for forming a dielectric film and method for fabricating a capacitor using the sameLG SEMICON CO LTD·Filed 1997·Granted Jul 21, 1998·83 cites·19 claims
- 0588US8134195B2Semiconductor device and method of fabricating the sameLEE KEE-JEUNG·Filed 2008·Granted Mar 13, 2012·14 cites·36 claims
- 0687US7616426B2Capacitor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Nov 10, 2009·10 cites·32 claims
- 0785US7772132B2Method for forming tetragonal zirconium oxide layer and method for fabricating capacitor having the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Aug 10, 2010·10 cites·28 claims
- 0882US7670903B2Method for fabricating a cylindrical capacitor using amorphous carbon-based layerHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 2, 2010·10 cites·36 claims
- 0979US7501320B2Semiconductor device with dielectric structure and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Mar 10, 2009·7 cites·29 claims
- 1079US7416936B2Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Aug 26, 2008·5 cites·8 claims
- 1178US8017491B2Method for fabricating capacitorHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Sep 13, 2011·7 cites·32 claims
- 1278US7361544B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Apr 22, 2008·7 cites·21 claims
- 1373US7754577B2Method for fabricating capacitorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jul 13, 2010·4 cites·8 claims
- 1472US7781336B2Semiconductor device including ruthenium electrode and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Aug 24, 2010·3 cites·13 claims
- 1572US7332755B2Transistor structure of memory device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Feb 19, 2008·5 cites·7 claims
- 1672US5728604AMethod for making thin film transistorsGOLD STAR ELECTRONICS·Filed 1996·Granted Mar 17, 1998·34 cites·7 claims
- 1767US6645811B2Capacitor using high dielectric constant film for semiconductor memory device and fabrication method thereforHYUNDAI ELECTRONICS IND·Filed 2001·Granted Nov 11, 2003·13 cites·17 claims
- 1865US5569619AMethod for forming a capacitor of a semiconductor memory cellLG SEMICON CO LTD·Filed 1995·Granted Oct 29, 1996·25 cites·16 claims
- 1965US2010270333A1Powder container capable of controlling amount of discharged powderSHINYOUNG CO LTD·Filed 2009·Application pending·0 cites
- 2062US6060346ASemiconductor device and method for manufacturing the sameLG SEMICON CO LTD·Filed 1997·Granted May 9, 2000·26 cites·18 claims
- 2161US7629221B2Method for forming capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Dec 8, 2009·2 cites·19 claims
- 2260US5753544ACrystallization process and method of manufacturing thin film transistor using sameLG SEMICON CO LTD·Filed 1995·Granted May 19, 1998·26 cites·18 claims
- 2360US5629540ASemiconductor device having overlapped storage electrodesGOLD STAR ELECTRONICS·Filed 1995·Granted May 13, 1997·19 cites·20 claims
- 2458US12436547B2Gas supply apparatus for substrate processing apparatusJUSUNG ENG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·11 claims
- 2558US7229888B2Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Jun 12, 2007·5 cites·2 claims
- 2657US6071770ASemiconductor memory device and method for fabricating the sameLG SEMICON CO LTD·Filed 1998·Granted Jun 6, 2000·19 cites·17 claims
- 2755US2009148625A1Method for forming thin filmHYNIX SEMICONDUCTOR INC·Filed 2009·Application pending·0 cites
- 2854US5476806ASemiconductor device and method for making thereofGOLD STAR ELECTRONICS·Filed 1994·Granted Dec 19, 1995·15 cites·14 claims
- 2953US9214467B2Method for fabricating capacitorSK HYNIX INC·Filed 2015·Granted Dec 15, 2015·0 cites·10 claims
- 3053US7531422B2Method for fabricating capacitor in semiconductor device using hafnium terbium oxide dielectric layerHYNIX SEMICONDUCTOR INC·Filed 2007·Granted May 12, 2009·0 cites·9 claims
- 3152US7786521B2Semiconductor device with dielectric structure and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Aug 31, 2010·0 cites·4 claims
- 3250US8048758B2Method for fabricating a capacitor utilizes the sacrificial pattern covering the cell regionHYNIX SEMICONDUCTOR INC·Filed 2011·Granted Nov 1, 2011·0 cites·11 claims
- 3350US8048757B2Method for fabricating capacitor utilizes a sacrificial pattern enclosing the upper outer walls of the storage nodesHYNIX SEMICONDUCTOR INC·Filed 2011·Granted Nov 1, 2011·0 cites·12 claims
- 3450US7816202B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Oct 19, 2010·0 cites·27 claims
- 3549US6297091B1Method for fabricating contact pad for semiconductor deviceHYUNDAI MICRO ELECTRONICS CO·Filed 1999·Granted Oct 2, 2001·11 cites·23 claims
- 3648US5828129ASemiconductor memory device including a capacitor having a top portion which is a diffusion barrierLG SEMICON CO LTD·Filed 1997·Granted Oct 27, 1998·13 cites·13 claims
- 3747US6326252B1Method for fabricating MOS transistor having dual gateHYUNDAI ELECTRONICS IND·Filed 2000·Granted Dec 4, 2001·3 cites·20 claims
- 3847US2006183301A1Method for forming thin filmYEOM SEUNG-JIN·Filed 2005·Application pending·0 cites
- 3946US8946047B2Method for fabricating capacitorKIM JIN-HYOCK·Filed 2010·Granted Feb 3, 2015·0 cites·10 claims
- 4046US8120180B2Semiconductor device including ruthenium electrode and method for fabricating the sameKIM JIN-HYOCK·Filed 2010·Granted Feb 21, 2012·0 cites·8 claims
- 4144US7888245B2Plasma doping method and method for fabricating semiconductor device using the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Feb 15, 2011·0 cites·14 claims
- 4244US7259059B2Method for forming capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Aug 21, 2007·0 cites·10 claims
- 4343US2005130326A1Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 4441US9831085B2Method of fabricating hafnium oxide layer and semiconductor device having the sameSK HYNIX INC·Filed 2016·Granted Nov 28, 2017·0 cites·24 claims
- 4541US8298909B2Semiconductor device and method for fabricating the sameDO KWAN-WOO·Filed 2007·Granted Oct 30, 2012·0 cites·24 claims
- 4640US6344965B1Capacitor using high dielectric constant film for semiconductor memory device and fabrication method thereforHYUNDAI ELECTRONICS IND·Filed 1999·Granted Feb 5, 2002·8 cites·21 claims
- 4739US2023323533A1Substrate processing methodJUSUNG ENG CO LTD·Filed 2021·Application pending·0 cites
- 4839US2005110069A1Hafnium oxide and aluminium oxide alloyed dielectric layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 4936US2005287737A1Method for forming storage node electrode of capacitorPARK KI SEON·Filed 2004·Application pending·0 cites
- 5035US2001017423A1Semiconductor device having sidewall spacers manifesting a self-aligned contact holeLG SEMICON CO LTD·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →