Method for fabricating a capacitor utilizes the sacrificial pattern covering the cell region

Abstract

A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. A sacrificial pattern is formed over the isolation layer and covers the cell region. The isolation layer is etched in the peripheral region to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed.

1. A method for fabricating a capacitor, comprising:
 forming an isolation layer over a cell region and a peripheral region of a substrate, the isolation layer forming a plurality of open regions in the cell region, wherein the substrate is divided into the cell region and the peripheral region; 
 forming storage nodes on surfaces of the open regions; 
 forming a sacrificial pattern over the isolation layer, wherein the sacrificial pattern covers the cell region; 
 etching the isolation layer in the peripheral region to expose side portions of the resultant structure obtained after forming the sacrificial pattern in the cell region; 
 with the sacrificial pattern supporting the storage nodes, removing the isolation layer in the cell region; and 
 removing the sacrificial pattern. 
 
     
     
       2. The method of  claim 1 , wherein the sacrificial pattern and the isolation layer each comprise a material having an etch rate different from each other. 
     
     
       3. The method of  claim 1 , wherein the isolation layer comprises an oxide-based layer and the sacrificial pattern comprises an amorphous carbon layer. 
     
     
       4. The method of  claim 1 , wherein the isolation layer comprises an oxide-based layer and the sacrificial pattern comprises a photoresist layer. 
     
     
       5. The method of  claim 1 , wherein the isolation layer comprises an oxide-based layer and the sacrificial pattern comprises a stack structure including an amorphous carbon layer and a photoresist layer. 
     
     
       6. The method of  claim 1 , wherein etching the isolation layer in the peripheral region comprises performing a dry etch process. 
     
     
       7. The method of  claim 1 , wherein removing the isolation layer comprises performing a wet dip out process and a dry process. 
     
     
       8. The method of  claim 7 , wherein performing the wet dip out process comprises using one of: a buffered oxide etchant (BOE) and a hydrogen fluoride (HF) solution. 
     
     
       9. The method of  claim 1 , wherein removing the sacrificial pattern comprises performing a dry ashing process. 
     
     
       10. The method of  claim 9 , wherein performing the dry ashing process proceeds in one of: an oxygen ambience and an ozone ambience. 
     
     
       11. The method of  claim 1 , wherein the open regions are arranged in a zigzag pattern.