Inventor · disambiguated record
Jan Van Houdt
Also filed as: VAN HOUDT JAN · VAN HOUDT JAN F
31 granted patents·8 pending applications·587 citations·filing 1993–2025
97Inventor score
Top patents by PatentIndex Score
39 records- 0197US6897517B2Multibit non-volatile memory and methodINFINEON AG·Filed 2003·Granted May 24, 2005·150 cites·13 claims
- 0296US10211312B2Ferroelectric memory device and fabrication method thereofIMEC VZW·Filed 2016·Granted Feb 19, 2019·15 cites·22 claims
- 0396US10211223B2Vertical ferroelectric memory device and a method for manufacturing thereofIMEC VZW·Filed 2015·Granted Feb 19, 2019·38 cites·12 claims
- 0496US10090036B2Non-volatile memory cell having pinch-off ferroelectric field effect transistorIMEC VZW·Filed 2016·Granted Oct 2, 2018·14 cites·16 claims
- 0595US10418377B2Three-dimensional non-volatile semiconductor memory device having replacement gateIMEC VZW·Filed 2017·Granted Sep 17, 2019·10 cites·8 claims
- 0694US10522624B2V-grooved vertical channel-type 3D semiconductor memory device and method for manufacturing the sameIMEC VZW·Filed 2017·Granted Dec 31, 2019·11 cites·20 claims
- 0791US10403627B2Memory device for a dynamic random access memoryIMEC VZW·Filed 2017·Granted Sep 3, 2019·12 cites·20 claims
- 0890US9847109B2Memory cellIMEC VZW·Filed 2016·Granted Dec 19, 2017·6 cites·20 claims
- 0986US7232722B2Method of making a multibit non-volatile memoryINFINEON AG·Filed 2005·Granted Jun 19, 2007·12 cites·21 claims
- 1086US6243293B1Contacted cell array configuration for erasable and programmable semiconductor memoriesIMEC INTER UNI MICRO ELECTR·Filed 1999·Granted Jun 5, 2001·66 cites·14 claims
- 1181US11211108B2Ferroelectric memory deviceIMEC VZW·Filed 2018·Granted Dec 28, 2021·3 cites·18 claims
- 1281US10672894B2Method of fabricating ferroelectric field-effect transistorIMEC VZW·Filed 2018·Granted Jun 2, 2020·3 cites·20 claims
- 1381US6486509B1Non-volatile memory cellIMEC VZW·Filed 1998·Granted Nov 26, 2002·34 cites·2 claims
- 1479US6115285ADevice and method for multi-level charge/storage and reading outSIEMENS AG·Filed 1997·Granted Sep 5, 2000·49 cites·15 claims
- 1576US6044015AMethod of programming a flash EEPROM memory cell array optimized for low power consumptionIMEC VZW·Filed 1996·Granted Mar 28, 2000·32 cites·37 claims
- 1671US5583810AMethod for programming a semiconductor memory deviceIMEC INTER UNI MICRO ELECTR·Filed 1993·Granted Dec 10, 1996·29 cites·2 claims
- 1770US7136306B2Single bit nonvolatile memory cell and methods for programming and erasing thereofIMEC INTER UNI MICRO ELECTR·Filed 2003·Granted Nov 14, 2006·18 cites·2 claims
- 1867US6246612B1Methods of erasing a memory device and a method of programming a memory device for low-voltage and low-power applicationsIMEC INTER UNI MICRO ELECTR·Filed 2000·Granted Jun 12, 2001·11 cites·6 claims
- 1967US6144586AMethods of erasing a memory device and a method of programming a memory device for low-voltage and low-power applicationsIMEC INTER UNI MICRO ELECTR·Filed 2000·Granted Nov 7, 2000·11 cites·4 claims
- 2063US12439673B2Split gate FerroFETIMEC VZW·Filed 2022·Granted Oct 7, 2025·0 cites·17 claims
- 2162US12041782B2Memory device with ferroelectric charge trapping layerIMEC VZW·Filed 2022·Granted Jul 16, 2024·0 cites·18 claims
- 2262US5583811ATransistor structure for erasable and programmable semiconductor memory devicesIMEC INTER UNI MICRO ELECTR·Filed 1994·Granted Dec 10, 1996·19 cites·3 claims
- 2361US2025308571A1Ferroelectric memory device and method of non-destructively reading sameIMEC VZW·Filed 2025·Application pending·0 cites
- 2460US5969991AMethod of erasing a flash EEPROM memory cell array optimized for low power consumptionIMEC INTER UNI MICRO ELECTR·Filed 1997·Granted Oct 19, 1999·16 cites·6 claims
- 2560US2025308570A1Ferroelectric memory device and method of non-destructively reading sameIMEC VZW·Filed 2025·Application pending·0 cites
- 2659US11968841B2Ferroelectric device based on hafnium zirconate and method of fabricating the sameIMEC VZW·Filed 2022·Granted Apr 23, 2024·0 cites·21 claims
- 2758US12414302B2Ferroelectric deviceIMEC VZW·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 2858US12376296B2Memory structures and methods of processing the sameIMEC VZW·Filed 2022·Granted Jul 29, 2025·0 cites·15 claims
- 2958US11296117B2Three-dimensional ferroelectric memoryIMEC VZW·Filed 2020·Granted Apr 5, 2022·0 cites·20 claims
- 3058US2024206186A1Ferroelectric field-effect memory deviceIMEC VZW·Filed 2023·Application pending·0 cites
- 3157US6009013AContactless array configuration for semiconductor memoriesIMEC INTER UNI MICRO ELECTR·Filed 1995·Granted Dec 28, 1999·18 cites·14 claims
- 3256US2020006380A1Three-dimensional non-volatile semiconductor memory device having replacement gateIMEC VZW·Filed 2019·Application pending·0 cites
- 3355US2025133744A13D Ferroelectric Memory Structure and Method for Reading-Out the Memory StructureIMEC VZW·Filed 2024·Application pending·0 cites
- 3453US9362296B2Non-volatile memory semiconductor devices and method for making thereofIMEC·Filed 2014·Granted Jun 7, 2016·1 cites·20 claims
- 3550US2024015984A1Layer stack for ferroelectric deviceIMEC VZW·Filed 2023·Application pending·0 cites
- 3649US2024188304A1Capacitive memory structure and method for reading-out a capacitive memory structureIMEC VZW·Filed 2023·Application pending·0 cites
- 3748US6282124B1Method of erasing a flash EEPROM memory cell array optimized for low power consumptionIMEC INTER UNI MICRO ELECTR·Filed 1999·Granted Aug 28, 2001·9 cites·3 claims
- 3843US11211404B2Memory devices based on ferroelectric field effect transistorsIMEC VZW·Filed 2019·Granted Dec 28, 2021·0 cites·13 claims
- 3936US2019198080A1Ferroelectric memory device and method of programming sameIMEC VZW·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →