Inventor · disambiguated record
Jacob Woodruff
Also filed as: WOODRUFF JACOB · WOODRUFF JACOB HUFFMAN
21 granted patents·12 pending applications·545 citations·filing 2010–2023
94Inventor score
Files withMERCK PATENT GMBH14ASM IP HOLDING BV12JACKREL DAVID B3JACKREL DAVID1SEWELL RICHARD HAMILTON1
Top patents by PatentIndex Score
33 records- 0198US10032628B2Source/drain performance through conformal solid state dopingASM IP HOLDING BV·Filed 2016·Granted Jul 24, 2018·463 cites·16 claims
- 0295US9312042B2Metal seed layer for solar cell conductive contactSEWELL RICHARD HAMILTON·Filed 2013·Granted Apr 12, 2016·18 cites·8 claims
- 0394US9461134B1Method for forming source/drain contact structure with chalcogen passivationASM IP HOLDING BV·Filed 2015·Granted Oct 4, 2016·12 cites·23 claims
- 0493US9981286B2Selective formation of metal silicidesASM IP HOLDING BV·Filed 2016·Granted May 29, 2018·11 cites·21 claims
- 0591US11230764B2Methods of atomic layer deposition for selective film growthMERCK PATENT GMBH·Filed 2018·Granted Jan 25, 2022·5 cites·20 claims
- 0690US9711396B2Method for forming metal chalcogenide thin films on a semiconductor deviceASM IP HOLDING BV·Filed 2015·Granted Jul 18, 2017·7 cites·20 claims
- 0790US9607842B1Methods of forming metal silicidesASM IP HOLDING BV·Filed 2015·Granted Mar 28, 2017·6 cites·22 claims
- 0887US10892156B2Methods for forming a silicon nitride film on a substrate and related semiconductor device structuresASM IP HOLDING BV·Filed 2017·Granted Jan 12, 2021·5 cites·22 claims
- 0986US9520562B2Method of making a resistive random access memoryASM IP HOLDING BV·Filed 2014·Granted Dec 13, 2016·7 cites·56 claims
- 1083US10770286B2Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structuresASM IP HOLDING BV·Filed 2017·Granted Sep 8, 2020·3 cites·20 claims
- 1176US8889469B2Multi-nary group IB and VIA based semiconductorJACKREL DAVID B·Filed 2012·Granted Nov 18, 2014·3 cites·18 claims
- 1275US9472757B2Method of making a resistive random access memory deviceASM IP HOLDING BV·Filed 2014·Granted Oct 18, 2016·3 cites·37 claims
- 1364US12448681B2Methods of forming molybdenum-containing films deposited on elemental metal filmsMERCK PATENT GMBH·Filed 2021·Granted Oct 21, 2025·0 cites·9 claims
- 1462US8729543B2Multi-nary group IB and VIA based semiconductorJACKREL DAVID B·Filed 2011·Granted May 20, 2014·2 cites·20 claims
- 1560US11848200B2Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structuresASM IP HOLDING BV·Filed 2020·Granted Dec 19, 2023·0 cites·18 claims
- 1655US10199234B2Methods of forming metal silicidesASM IP HOLDING BV·Filed 2017·Granted Feb 5, 2019·0 cites·19 claims
- 1755US2023402290A1Atomic layer etching of metal oxides using novel co-reactants as halogenating agents for semiconductor fabricationMERCK PATENT GMBH·Filed 2023·Application pending·0 cites
- 1854US11976352B2Methods of vapor deposition of ruthenium using an oxygen-free co-reactantMERCK PATENT GMBH·Filed 2019·Granted May 7, 2024·0 cites·23 claims
- 1954US10665452B2Source/drain performance through conformal solid state dopingASM IP HOLDING BV·Filed 2018·Granted May 26, 2020·0 cites·18 claims
- 2051US2025109501A1Atomic layer etching of metals using novel co-reactants as halogenating agentsMERCK PATENT GMBH·Filed 2023·Application pending·0 cites
- 2150US2022341039A1Ruthenium pyrazolate precursor for atomic layer deposition and similar processesMERCK PATENT GMBH·Filed 2020·Application pending·0 cites
- 2248US2012270363A1Multi-nary group ib and via based semiconductorJACKREL DAVID·Filed 2012·Application pending·0 cites
- 2348US2023416911A1Selective deposition of silicon and oxygen containing dielectric film on dielectricsVERSUM MAT US LLC·Filed 2021·Application pending·0 cites
- 2447US2023227966A1Methods Of Forming Ruthenium-Containing Films Without A Co-ReactantMERCK PATENT GMBH·Filed 2021·Application pending·0 cites
- 2546US2023089523A1Inherently ferroelectric hf-zr containing filmsMERCK PATENT GMBH·Filed 2021·Application pending·0 cites
- 2646US2023049464A1Ruthenium-Containing Films Deposited On Ruthenium-Titanium Nitride Films And Methods Of Forming The SameMERCK PATENT GMBH·Filed 2021·Application pending·0 cites
- 2744US12297537B2Compounds and methods for selectively forming metal-containing filmsMERCK PATENT GMBH·Filed 2020·Granted May 13, 2025·0 cites·46 claims
- 2841US2023108732A1Methods Of Selectively Forming Metal-Containing FilmsMERCK PATENT GMBH·Filed 2021·Application pending·0 cites
- 2940US12163223B2Process for the production of a molecular layer and electronic component comprising sameMERCK PATENT GMBH·Filed 2020·Granted Dec 10, 2024·0 cites·13 claims
- 3040US12035546B2Method for producing an electronic component which includes a self-assembled monolayerMERCK PATENT GMBH·Filed 2019·Granted Jul 9, 2024·0 cites·20 claims
- 3137US2010248419A1Solar cell absorber layer formed from equilibrium precursor(s)WOODRUFF JACOB·Filed 2010·Application pending·0 cites
- 3237US2021398848A1Method for deposition of highly selective metal filmsMERCK PATENT GMBH·Filed 2019·Application pending·0 cites
- 3328US2011294254A1Low cost solar cells formed using a chalcogenization rate modifierJACKREL DAVID B·Filed 2010·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Jacob Woodruff files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →