Inventor · disambiguated record
Jane A. Yater
Also filed as: YATER JANE · YATER JANE A
38 granted patents·536 citations·filing 1992–2016
98Inventor score
Top patents by PatentIndex Score
38 records- 0197US8372699B2Method for forming a split-gate memory cellFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Feb 12, 2013·44 cites·20 claims
- 0296US8901632B1Non-volatile memory (NVM) and high-K and metal gate integration using gate-last methodologyFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Dec 2, 2014·40 cites·18 claims
- 0394US9275864B2Method to form a polysilicon nanocrystal thin film storage bitcell within a high k metal gate platform technology using a gate last process to form transistor gatesFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Mar 1, 2016·19 cites·12 claims
- 0494US8969940B1Method of gate strapping in split-gate memory cell with inlaid gateFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Mar 3, 2015·21 cites·20 claims
- 0593US7811886B2Split-gate thin film storage NVM cell with reduced load-up/trap-up effectsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 12, 2010·33 cites·18 claims
- 0692US6791883B2Program and erase in a thin film storage non-volatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Sep 14, 2004·66 cites·38 claims
- 0788US6839280B1Variable gate bias for a reference transistor in a non-volatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jan 4, 2005·43 cites·19 claims
- 0885US6751125B2Gate voltage reduction in a memory readFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jun 15, 2004·37 cites·38 claims
- 0984US9129855B2Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodologyFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Sep 8, 2015·7 cites·18 claims
- 1084US5470395AReversible thermoelectric converterYATER JOSEPH C·Filed 1994·Granted Nov 28, 1995·43 cites·21 claims
- 1183US9082650B2Integrated split gate non-volatile memory cell and logic structurePERERA ASANGA H·Filed 2013·Granted Jul 14, 2015·7 cites·19 claims
- 1282US5356484AReversible thermoelectric converterYATER JOSEPH C·Filed 1992·Granted Oct 18, 1994·41 cites·48 claims
- 1381US5623119AReversible thermoelectric converterYATER JOSEPH C·Filed 1995·Granted Apr 22, 1997·40 cites·21 claims
- 1478US6964902B2Method for removing nanoclusters from selected regionsFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Nov 15, 2005·20 cites·26 claims
- 1576US7256454B2Electronic device including discontinuous storage elements and a process for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 14, 2007·6 cites·20 claims
- 1673US6969883B2Non-volatile memory having a reference transistorFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Nov 29, 2005·15 cites·17 claims
- 1772US8962416B1Split gate non-volatile memory cellWINSTEAD BRIAN A·Filed 2013·Granted Feb 24, 2015·3 cites·20 claims
- 1872US8329544B2Method for forming a semiconductor device having nanocrystalsKANG SUNG-TAEG·Filed 2011·Granted Dec 11, 2012·3 cites·20 claims
- 1972US7902022B2Self-aligned in-laid split gate memory and method of makingFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Mar 8, 2011·5 cites·10 claims
- 2070US7262997B2Process for operating an electronic device including a memory array and conductive linesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 28, 2007·6 cites·8 claims
- 2168US9006093B2Non-volatile memory (NVM) and high voltage transistor integrationHONG CHEONG MIN·Filed 2013·Granted Apr 14, 2015·2 cites·15 claims
- 2266US9252246B2Integrated split gate non-volatile memory cell and logic devicePERERA ASANGA H·Filed 2013·Granted Feb 2, 2016·2 cites·19 claims
- 2366US7471560B2Electronic device including a memory array and conductive linesFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Dec 30, 2008·5 cites·19 claims
- 2465US7064030B2Method for forming a multi-bit non-volatile memory deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 20, 2006·9 cites·21 claims
- 2561US7642163B2Process of forming an electronic device including discontinuous storage elements within a dielectric layerFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jan 5, 2010·2 cites·20 claims
- 2660US8679912B2Semiconductor device having different non-volatile memories having nanocrystals of differing densities and method thereforKANG SUNG-TAEG·Filed 2012·Granted Mar 25, 2014·1 cites·20 claims
- 2760US8329543B2Method for forming a semiconductor device having nanocrystalsKANG SUNG-TAEG·Filed 2011·Granted Dec 11, 2012·1 cites·20 claims
- 2856US6955967B2Non-volatile memory having a reference transistor and method for formingFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Oct 18, 2005·6 cites·11 claims
- 2955US9397176B2Method of forming split gate memory with improved reliabilityHONG CHEONG MIN·Filed 2014·Granted Jul 19, 2016·0 cites·19 claims
- 3052US9219167B2Non-volatile memory (NVM) cellWILLIAMS JACOB T·Filed 2013·Granted Dec 22, 2015·0 cites·9 claims
- 3151US9847397B2Method of forming split gate memory with improved reliabilityFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Dec 19, 2017·0 cites·19 claims
- 3250US9397201B2Non-volatile memory (NVM) cell and a method of makingFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jul 19, 2016·0 cites·11 claims
- 3350US9331092B2Methods for forming contact landing regions in split-gate non-volatile memory (NVM) cell arraysFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted May 3, 2016·0 cites·11 claims
- 3449US9054208B2Methods for forming contact landing regions in split-gate non-volatile memory (NVM) cell arraysYATER JANE A·Filed 2013·Granted Jun 9, 2015·0 cites·13 claims
- 3542US5889287AReversible thermoelectric converterFiled 1995·Granted Mar 30, 1999·9 cites·17 claims
- 3640US10026820B2Split gate device with doped region and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Jul 17, 2018·0 cites·20 claims
- 3734US9685339B2Scalable split gate memory cell arrayYATER JANE A·Filed 2013·Granted Jun 20, 2017·0 cites·20 claims
- 3834US8431471B2Method for integrating a non-volatile memory (NVM)YATER JANE A·Filed 2010·Granted Apr 30, 2013·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →