Inventor · disambiguated record
Jae-Man Yoon
Also filed as: YOON JAE-MAN
74 granted patents·7 pending applications·985 citations·filing 2001–2023
99Inventor score
Top patents by PatentIndex Score
81 records- 0199US10923390B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2020·Granted Feb 16, 2021·9 cites·7 claims
- 0298US7323375B2Fin field effect transistor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 29, 2008·108 cites·21 claims
- 0397US7382018B23-Dimensional flash memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 3, 2008·59 cites·18 claims
- 0497US7368352B2Semiconductor devices having transistors with vertical channels and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 6, 2008·61 cites·33 claims
- 0597US7332386B2Methods of fabricating fin field transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·56 cites·16 claims
- 0696US8058683B2Access device having vertical channel and related semiconductor device and a method of fabricating the access deviceYOON JAE-MAN·Filed 2007·Granted Nov 15, 2011·43 cites·17 claims
- 0795US7586149B2Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 8, 2009·34 cites·20 claims
- 0895US7177192B2Method of operating a flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 13, 2007·37 cites·18 claims
- 0994US10622249B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2018·Granted Apr 14, 2020·9 cites·21 claims
- 1094US7348628B2Vertical channel semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 25, 2008·30 cites·24 claims
- 1192US7781285B2Semiconductor device having vertical transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 24, 2010·22 cites·15 claims
- 1291US7977725B2Integrated circuit semiconductor device including stacked level transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 12, 2011·20 cites·17 claims
- 1391US7531412B2Methods of manufacturing semiconductor memory devices including a vertical channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 12, 2009·26 cites·26 claims
- 1491US7166514B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 23, 2007·15 cites·25 claims
- 1591US7160780B2Method of manufacturing a fin field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 9, 2007·22 cites·26 claims
- 1690US7728373B2DRAM device with cell epitaxial layers partially overlap buried cell gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 1, 2010·13 cites·13 claims
- 1790US7056781B2Method of forming fin field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 6, 2006·51 cites·26 claims
- 1889US8293604B2Methods of manufacturing vertical channel semiconductor devicesYOON JAE-MAN·Filed 2010·Granted Oct 23, 2012·9 cites·13 claims
- 1989US7781287B2Methods of manufacturing vertical channel semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 24, 2010·14 cites·12 claims
- 2088US8022457B2Semiconductor memory device having vertical channel transistor and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 20, 2011·13 cites·15 claims
- 2188US7592686B2Semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 22, 2009·13 cites·11 claims
- 2288US7317646B2Memory device having shared open bit line sense amplifier architectureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 8, 2008·15 cites·21 claims
- 2388US7153733B2Method of fabricating fin field effect transistor using isotropic etching techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 26, 2006·14 cites·11 claims
- 2487US7387931B2Semiconductor memory device with vertical channel transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 17, 2008·12 cites·28 claims
- 2585US7701002B2Semiconductor device having buried gate electrode and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 20, 2010·15 cites·18 claims
- 2685US7015106B2Double gate field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 21, 2006·35 cites·13 claims
- 2784US8791526B2Vertical type integrated circuit devices and memory devices including conductive lines supported by Mesa structures and methods of fabricating the sameYOON JAE-MAN·Filed 2010·Granted Jul 29, 2014·9 cites·14 claims
- 2884US8174065B2Semiconductor device having vertical transistor and method of fabricating the sameKIM BONG-SOO·Filed 2010·Granted May 8, 2012·7 cites·17 claims
- 2984US7902026B2Method of fabricating semiconductor device having vertical channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 8, 2011·12 cites·19 claims
- 3083US8373214B2Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 12, 2013·7 cites·23 claims
- 3183US8053307B2Method of fabricating semiconductor device with cell epitaxial layers partially overlap buried cell gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Nov 8, 2011·5 cites·15 claims
- 3283US7872302B2Semiconductor device having vertical transistor formed on an active pattern protruding from a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 18, 2011·10 cites·8 claims
- 3383US7662720B23-Dimensional flash memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 16, 2010·8 cites·14 claims
- 3483US6570200B1Transistor structure using epitaxial layers and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 27, 2003·27 cites·10 claims
- 3582US8039896B2Semiconductor memory device with vertical channel formed on semiconductor pillarsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 18, 2011·8 cites·23 claims
- 3682US7531874B2Field effect transistors including source/drain regions extending beneath pillarsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·9 cites·21 claims
- 3782US7407845B2Field effect transistor and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 5, 2008·13 cites·29 claims
- 3881US8264022B2Semiconductor device including contact plug and associated methodsYOON JAE-MAN·Filed 2009·Granted Sep 11, 2012·10 cites·11 claims
- 3981US7883972B2Semiconductor device having a fin structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 8, 2011·6 cites·10 claims
- 4081US7803684B2Method of fabricating semiconductor device having a junction extended by a selective epitaxial growth (SEG) layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 28, 2010·6 cites·18 claims
- 4181US7560759B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 14, 2009·6 cites·19 claims
- 4280US8409953B2Method of manufacturing a semiconductor deviceYOON JAE-MAN·Filed 2011·Granted Apr 2, 2013·5 cites·8 claims
- 4379US7999309B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 16, 2011·6 cites·12 claims
- 4479US7943978B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 17, 2011·5 cites·10 claims
- 4579US7579648B2Semiconductor device having a channel pattern and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 25, 2009·6 cites·28 claims
- 4679US7420244B2Semiconductor device having a fin structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 2, 2008·5 cites·14 claims
- 4777US12131950B2Method for fabricating a semiconductor deviceSK HYNIX INC·Filed 2023·Granted Oct 29, 2024·0 cites·8 claims
- 4877US7759198B2Method of forming semiconductor devices having a vertical channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 20, 2010·8 cites·23 claims
- 4976US8154065B2Semiconductor memory devices including a vertical channel transistor having a buried bit lineYOON JAE-MAN·Filed 2009·Granted Apr 10, 2012·6 cites·11 claims
- 5074US8283714B2Semiconductor memory device having vertical channel transistor and method for fabricating the sameSEO HYEOUNG-WON·Filed 2011·Granted Oct 9, 2012·3 cites·31 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →