Inventor · disambiguated record
Jerome Ciavatti
Also filed as: CIAVATTI JEROME · CIAVATTI JEROME J B
37 granted patents·3 pending applications·220 citations·filing 1999–2018
97Inventor score
Top patents by PatentIndex Score
40 records- 0198US10163635B1Asymmetric spacer for preventing epitaxial merge between adjacent devices of a semiconductor and related methodGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·26 cites·13 claims
- 0296US10373877B1Methods of forming source/drain contact structures on integrated circuit productsGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 6, 2019·18 cites·20 claims
- 0396US10211206B1Two-port vertical SRAM circuit structure and method for producing the sameGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 19, 2019·17 cites·18 claims
- 0496US10164006B1LDMOS FinFET structures with trench isolation in the drain extensionGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·17 cites·20 claims
- 0596US10134739B1Memory array with buried bitlines below vertical field effect transistors of memory cells and a method of forming the memory arrayGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 20, 2018·21 cites·18 claims
- 0696US9536991B1Single diffusion break structureGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 3, 2017·19 cites·10 claims
- 0795US10163915B1Vertical SRAM structureGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·11 cites·15 claims
- 0895US9543298B1Single diffusion break structure and cuts later method of makingGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 10, 2017·14 cites·10 claims
- 0992US10121878B1LDMOS finFET structures with multiple gate structuresGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 6, 2018·7 cites·20 claims
- 1091US9773781B1Resistor and capacitor disposed directly upon a SAC cap of a gate structure of a semiconductor structureGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 26, 2017·8 cites·13 claims
- 1191US9324827B1Non-planar schottky diode and method of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 26, 2016·13 cites·15 claims
- 1289US9842927B1Integrated circuit structure without gate contact and method of forming sameGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 12, 2017·5 cites·13 claims
- 1388US9876010B1Resistor disposed directly upon a sac cap of a gate structure of a semiconductor structureGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 23, 2018·6 cites·16 claims
- 1483US10068902B1Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 4, 2018·4 cites·4 claims
- 1583US10026740B1DRAM structure with a single diffusion breakGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 17, 2018·3 cites·19 claims
- 1680US10290712B1LDMOS finFET structures with shallow trench isolation inside the finGLOBALFOUNDRIES INC·Filed 2017·Granted May 14, 2019·3 cites·20 claims
- 1777US10475890B2Scaled memory structures or other logic devices with middle of the line cutsGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 12, 2019·2 cites·14 claims
- 1877US10418365B2Memory array with buried bitlines below vertical field effect transistors of memory cells and a method of forming the memory arrayGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 17, 2019·1 cites·20 claims
- 1977US9064868B2Advanced faraday shield for a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2012·Granted Jun 23, 2015·4 cites·16 claims
- 2072US10410929B2Multiple gate length device with self-aligned top junctionGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 10, 2019·1 cites·19 claims
- 2171US10593754B2SOI device structures with doped regions providing charge sinkingGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 17, 2020·1 cites·19 claims
- 2269US8962441B2Transistor device with improved source/drain junction architecture and methods of making such a deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 24, 2015·2 cites·20 claims
- 2368US8975130B2Methods of forming bipolar devices and an integrated circuit product containing such bipolar devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 10, 2015·2 cites·20 claims
- 2462US6544841B1Capacitor integrationST MICROELECTRONICS SA·Filed 2000·Granted Apr 8, 2003·8 cites·9 claims
- 2557US10121893B2Integrated circuit structure without gate contact and method of forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 6, 2018·0 cites·14 claims
- 2654US9087706B2Methods of forming bipolar devices and an integrated circuit product containing such bipolar devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 21, 2015·0 cites·10 claims
- 2753US9202911B2Self-aligned channel drift device and methods of making such a deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 1, 2015·0 cites·20 claims
- 2852US9601578B2Non-planar vertical dual source drift metal-oxide semiconductor (VDSMOS)GLOBALFOUNDRIES INC·Filed 2014·Granted Mar 21, 2017·0 cites·11 claims
- 2952US9178053B2Transistor device with improved source/drain junction architecture and methods of making such a deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 3, 2015·0 cites·12 claims
- 3050US10636894B2Fin-type transistors with spacers on the gatesGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 28, 2020·0 cites·19 claims
- 3150US9397191B2Methods of making a self-aligned channel drift deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 19, 2016·0 cites·20 claims
- 3250US8946896B2Extended liner for localized thick copper interconnectMOREAU DAVID·Filed 2009·Granted Feb 3, 2015·1 cites·21 claims
- 3347US10644149B1LDMOS fin-type field-effect transistors including a dummy gateGLOBALFOUNDRIES INC·Filed 2018·Granted May 5, 2020·0 cites·19 claims
- 3446US8691646B2FINFET compatible PC-bounded ESD diodeLIU YANXIANG·Filed 2012·Granted Apr 8, 2014·0 cites·15 claims
- 3543US2014302660A1Local interconnect to a protection diodeGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 3643US2015364426A1Decoupling capacitor for semiconductorsGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 3741US6432771B1DRAM and MOS transistor manufacturingST MICROELECTRONICS SA·Filed 1999·Granted Aug 13, 2002·6 cites·23 claims
- 3841US2019088557A1Integrated circuit structure including deep n-well self-aligned with sti and method of forming sameGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 3940US9666709B2Non-planar semiconductor structure with preserved isolation regionGLOBALFOUNDRIES INC·Filed 2015·Granted May 30, 2017·0 cites·7 claims
- 4036US6716715B2Dram bit linesST MICROELECTRONICS SA·Filed 2001·Granted Apr 6, 2004·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →