Inventor · disambiguated record
Jeng Gong
Also filed as: GONG JENG
24 granted patents·2 pending applications·128 citations·filing 1998–2015
94Inventor score
Files withMACRONIX INT CO LTD10TAIWAN SEMICONDUCTOR MFG3CHAN WING-CHOR2SU RU-YI2UNITED MICROELECTRONICS CORP2
Top patents by PatentIndex Score
26 records- 0192US8159029B2High voltage device having reduced on-state resistanceSU RU-YI·Filed 2008·Granted Apr 17, 2012·21 cites·20 claims
- 0284US6468870B1Method of fabricating a LDMOS transistorTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 22, 2002·37 cites·17 claims
- 0380US7816744B2Gate electrodes of HVMOS devices having non-uniform doping concentrationsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Oct 19, 2010·7 cites·18 claims
- 0478US7714663B2Cascode low noise amplifier with a source coupled active inductorUNIV TSINGHUA·Filed 2007·Granted May 11, 2010·14 cites·14 claims
- 0575US9397205B1Semiconductor deviceMACRONIX INT CO LTD·Filed 2015·Granted Jul 19, 2016·2 cites·14 claims
- 0674US6734493B2Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 11, 2004·28 cites·5 claims
- 0772US9331143B1Semiconductor structure having field plates over resurf regions in semiconductor substrateMACRONIX INT CO LTD·Filed 2014·Granted May 3, 2016·3 cites·19 claims
- 0867US8158475B2Gate electrodes of HVMOS devices having non-uniform doping concentrationsSU RU-YI·Filed 2010·Granted Apr 17, 2012·2 cites·17 claims
- 0966US9455339B2High voltage device and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2014·Granted Sep 27, 2016·2 cites·17 claims
- 1065US8350304B2Junction-field-effect-transistor devices and methods of manufacturing the sameMACRONIX INT CO LTD·Filed 2010·Granted Jan 8, 2013·2 cites·5 claims
- 1160US9041142B2Semiconductor device and operating method for the sameMACRONIX INT CO LTD·Filed 2012·Granted May 26, 2015·1 cites·14 claims
- 1251US8963238B2Double diffused drain metal-oxide-semiconductor devices with floating poly thereon and methods of manufacturing the sameMACRONIX INT CO LTD·Filed 2014·Granted Feb 24, 2015·0 cites·16 claims
- 1347US8557653B2Junction-field-effect-transistor devices and methods of manufacturing the sameMACRONIX INT CO LTD·Filed 2012·Granted Oct 15, 2013·0 cites·15 claims
- 1446US9153574B2Semiconductor device and method of fabricating the sameMACRONIX INT CO LTD·Filed 2013·Granted Oct 6, 2015·0 cites·20 claims
- 1544US8952744B1Semiconductor device and operating method for the sameMACRONIX INT CO LTD·Filed 2013·Granted Feb 10, 2015·0 cites·20 claims
- 1643US9306043B2Bipolar junction transistor and operating and manufacturing method for the sameMACRONIX INT CO LTD·Filed 2013·Granted Apr 5, 2016·0 cites·16 claims
- 1743US9024365B2High voltage junction field effect transistor and manufacturing method thereofChen li-fan·Filed 2012·Granted May 5, 2015·0 cites·20 claims
- 1843US8698240B2Double diffused drain metal-oxide-simiconductor devices with floating poly thereon and methods of manufacturing the sameCHAN WING CHOR·Filed 2010·Granted Apr 15, 2014·0 cites·14 claims
- 1942US2009051000A1Semiconductor device structureGONG JENG·Filed 2008·Application pending·0 cites
- 2039US8841709B2JFET device and method of manufacturing the sameCHAN WING CHOR·Filed 2012·Granted Sep 23, 2014·0 cites·20 claims
- 2136US8604549B2Multi-gate field-effect transistor with enhanced and adaptable low-frequency noiseCHIU TANG-JUNG·Filed 2011·Granted Dec 10, 2013·0 cites·4 claims
- 2235US8264056B2Schottky diodeHUNG CHUNG YU·Filed 2010·Granted Sep 11, 2012·0 cites·25 claims
- 2335US2012181653A1Semiconductor pn junction structure and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Application pending·0 cites
- 2434US6040601AHigh voltage deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 21, 2000·3 cites·20 claims
- 2534US5966608AMethod of forming high voltage deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Oct 12, 1999·3 cites·15 claims
- 2621US6205013B1Multi-layer metallization capacitive structure for reduction of the simultaneous switching noise in integrated circuitsUNITED MICRELECTRONICS CORP·Filed 1998·Granted Mar 20, 2001·3 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →