Inventor · disambiguated record
Jean-Michel Guillot
Also filed as: GUILLOT JEAN-MICHEL
9 granted patents·1 pending application·230 citations·filing 1995–2011
90Inventor score
Files withGEN SEMICONDUCTOR INC3GEN INSTRUMENT CORP2VISHAY GEN SEMICONDUCTOR LLC2GUILLOT JEAN-MICHEL1VISHAY GENERAL SEMICONDUCTOR I1
Top patents by PatentIndex Score
10 records- 0195US6465304B1Method for fabricating a power semiconductor device having a floating island voltage sustaining layerGEN SEMICONDUCTOR INC·Filed 2001·Granted Oct 15, 2002·105 cites·25 claims
- 0287US6624494B2Method for fabricating a power semiconductor device having a floating island voltage sustaining layerGEN SEMICONDUCTOR INC·Filed 2002·Granted Sep 23, 2003·38 cites·15 claims
- 0384US8049271B2Power semiconductor device having a voltage sustaining layer with a terraced trench formation of floating islandsVISHAY GEN SEMICONDUCTOR LLC·Filed 2010·Granted Nov 1, 2011·7 cites·16 claims
- 0478US6649477B2Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islandsGEN SEMICONDUCTOR INC·Filed 2001·Granted Nov 18, 2003·19 cites·24 claims
- 0573US7736976B2Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islandsVISHAY GEN SEMICONDUCTOR LLC·Filed 2007·Granted Jun 15, 2010·4 cites·20 claims
- 0671US5677562APlanar P-N junction semiconductor structure with multilayer passivationGEN INSTRUMENT CORP·Filed 1996·Granted Oct 14, 1997·34 cites·10 claims
- 0755US7304347B2Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islandsVISHAY GENERAL SEMICONDUCTOR I·Filed 2003·Granted Dec 4, 2007·4 cites·18 claims
- 0848USD659476SGlassGUILLOT JEAN-MICHEL·Filed 2011·Granted May 15, 2012·8 cites·1 claims
- 0939US5610434AMesa semiconductor structureGEN INSTRUMENT CORP·Filed 1995·Granted Mar 11, 1997·11 cites·8 claims
- 1030US2004075160A1Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operationFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →