Inventor · disambiguated record
Jean-Baptiste Laloe
Also filed as: LALOE JEAN-BAPTISTE · LALOË JEAN-BAPTISTE JACQUES
4 granted patents·9 citations·filing 2012–2017
63Inventor score
Files withGLOBALFOUNDRIES INC4
Top patents by PatentIndex Score
4 records- 0182US8803254B2Methods of forming replacement gate structures for NFET semiconductor devices and devices having such gate structuresGLOBALFOUNDRIES INC·Filed 2012·Granted Aug 12, 2014·8 cites·11 claims
- 0267US10453747B2Double barrier layer sets for contacts in semiconductor deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 22, 2019·1 cites·17 claims
- 0347US10854472B2Method for forming a metal gate including de-oxidation of an oxidized surface of the metal gate utilizing a reducing agentGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 1, 2020·0 cites·7 claims
- 0444US9209258B2Depositing an etch stop layer before a dummy cap layer to improve gate performanceGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 8, 2015·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →