Inventor · disambiguated record
Jen-Hsiang Lu
Also filed as: LU JEN-HSIANG
21 granted patents·8 pending applications·70 citations·filing 2003–2025
94Inventor score
Top patents by PatentIndex Score
29 records- 0198US11177361B2FinFET and gate-all-around FET with selective high-k oxide depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 16, 2021·4 cites·20 claims
- 0295US11848363B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 19, 2023·3 cites·20 claims
- 0394US10741654B2Semiconductor device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 11, 2020·9 cites·20 claims
- 0494US10319832B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 11, 2019·9 cites·20 claims
- 0593US9947756B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 17, 2018·11 cites·20 claims
- 0691US10522653B2Gate spacer structure of FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·5 cites·20 claims
- 0790US11018242B2Gate spacer structure of FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 25, 2021·2 cites·20 claims
- 0890US10269907B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·6 cites·20 claims
- 0990US2025359263A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1087US10269968B2Semiconductor device including fin structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 23, 2019·5 cites·19 claims
- 1185US12272736B2FinFET and gate-all-around FET with selective high-k oxide depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 1285US11776911B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·1 cites·20 claims
- 1384US12433002B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 1484US10811517B2Gate spacer structure of finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 20, 2020·2 cites·20 claims
- 1584US10672879B2Method for forming FinFET and gate-all-around FET with selective high-K oxide depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·2 cites·20 claims
- 1684US2025241010A1Finfet and gate-all-around fet with selective high-k oxide depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1783US11404555B2Metal gates and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·1 cites·20 claims
- 1883US10644125B2Metal gates and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 5, 2020·2 cites·3 claims
- 1981US10692983B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 23, 2020·2 cites·20 claims
- 2078US11721739B2FinFET and gate-all-around FET with insulator having hydrophobic sidewallTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 2178US2025359275A1Gate-all-around transistor having multiple gate lengthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2274US2023387024A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2372US11810963B2Gate spacer structure of FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 2471US2022344489A1Metal Gates And Manufacturing Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2570US2025234623A1Gate-all-around transistor having multiple gate lengthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2655US11024582B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 1, 2021·0 cites·20 claims
- 2753US6818917B2Voltage-switchable and-tunable and environment-insensitive multi-color superlattice infrared photodetectorUNIV NAT TAIWAN·Filed 2003·Granted Nov 16, 2004·6 cites·10 claims
- 2849US2024162308A1Semiconductor device and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2945US2023307523A1Structure and formation method of semiconductor device with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →