Inventor · disambiguated record
Jerod F. Mason
Also filed as: MASON JEROD F
33 granted patents·10 pending applications·49 citations·filing 2005–2025
96Inventor score
Top patents by PatentIndex Score
43 records- 0194US10389350B2Stacked auxiliary field-effect transistor configurations for radio frequency applicationsSKYWORKS SOLUTIONS INC·Filed 2017·Granted Aug 20, 2019·6 cites·20 claims
- 0294US9564405B2Substrate opening formation in semiconductor devicesSKYWORKS SOLUTIONS INC·Filed 2016·Granted Feb 7, 2017·8 cites·20 claims
- 0392US10755987B2Radio-frequency isolation using porous siliconSKYWORKS SOLUTIONS INC·Filed 2018·Granted Aug 25, 2020·6 cites·7 claims
- 0491US10125011B2MEMS devices having discharge circuitsSKYWORKS SOLUTIONS INC·Filed 2015·Granted Nov 13, 2018·5 cites·15 claims
- 0590US12273100B2Main-auxiliary field-effect transistor configurationsSKYWORKS SOLUTIONS INC·Filed 2024·Granted Apr 8, 2025·0 cites·15 claims
- 0688US10008455B2Radio frequency isolation using substrate openingSKYWORKS SOLUTIONS INC·Filed 2016·Granted Jun 26, 2018·4 cites·19 claims
- 0786US11996832B2Main-auxiliary field-effect transistor configurationsSKYWORKS SOLUTIONS INC·Filed 2023·Granted May 28, 2024·0 cites·20 claims
- 0881US11677395B2Switches with main-auxiliary field-effect transistor configurationsSKYWORKS SOLUTIONS INC·Filed 2022·Granted Jun 13, 2023·0 cites·20 claims
- 0980US2025300652A1Main-auxiliary field-effect transistor configurationsSKYWORKS SOLUTIONS INC·Filed 2025·Application pending·0 cites
- 1078US11418185B2Switches with main-auxiliary field-effect transistor configurationsSKYWORKS SOLUTIONS INC·Filed 2021·Granted Aug 16, 2022·0 cites·20 claims
- 1178US7550785B1PHEMT structure having recessed ohmic contact and method for fabricating sameSKYWORKS SOLUTIONS INC·Filed 2005·Granted Jun 23, 2009·6 cites·16 claims
- 1276US11063586B2Main-auxiliary field-effect transistor configurations with an auxiliary stack and interior parallel transistorsSKYWORKS SOLUTIONS INC·Filed 2020·Granted Jul 13, 2021·0 cites·20 claims
- 1374US7877058B2Compact low loss high frequency switch with improved linearity performanceSKYWORKS SOLUTIONS INC·Filed 2007·Granted Jan 25, 2011·6 cites·19 claims
- 1473US10014331B2Field-effect transistor devices having proximity contact featuresSKYWORKS SOLUTIONS INC·Filed 2017·Granted Jul 3, 2018·1 cites·20 claims
- 1572US10865101B2Discharge circuits, devices and methodsSKYWORKS SOLUTIONS INC·Filed 2018·Granted Dec 15, 2020·1 cites·20 claims
- 1672US8175523B2Compact low loss high frequency switch with improved linearity performancePRIKHODKO DIMA·Filed 2010·Granted May 8, 2012·3 cites·23 claims
- 1771US10862475B2Independently controlled main-auxiliary branch configurations for radio frequency applicationsSKYWORKS SOLUTIONS INC·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 1871US10763847B2Main-auxiliary field-effect transistor configurations with interior parallel transistorsSKYWORKS SOLUTIONS INC·Filed 2019·Granted Sep 1, 2020·0 cites·20 claims
- 1970US2021335857A1Stacked field-effect transistors having proximity electrodes and proximity bias circuitsSKYWORKS SOLUTIONS INC·Filed 2021·Application pending·0 cites
- 2069US10630283B2Segmented main-auxiliary branch configurations for radio frequency applicationsSKYWORKS SOLUTIONS INC·Filed 2019·Granted Apr 21, 2020·0 cites·20 claims
- 2168US7678629B1Method for fabricating a recessed ohmic contact for a PHEMT structureSKYWORKS SOLUTIONS INC·Filed 2007·Granted Mar 16, 2010·3 cites·14 claims
- 2264US11049890B2Stacked field-effect transistors having proximity electrodesSKYWORKS SOLUTIONS INC·Filed 2019·Granted Jun 29, 2021·0 cites·20 claims
- 2364US10574227B2Main-auxiliary field-effect transistor structures for radio frequency applicationsSKYWORKS SOLUTIONS INC·Filed 2017·Granted Feb 25, 2020·0 cites·10 claims
- 2464US10547303B2Series main-auxiliary field-effect transistor configurations for radio frequency applicationsSKYWORKS SOLUTIONS INC·Filed 2017·Granted Jan 28, 2020·0 cites·30 claims
- 2564US10498329B2Parallel main-auxiliary field-effect transistor configurations for radio frequency applicationsSKYWORKS SOLUTIONS INC·Filed 2017·Granted Dec 3, 2019·0 cites·30 claims
- 2663US10630282B2Hybrid main-auxiliary field-effect transistor configurations for radio frequency applicationsSKYWORKS SOLUTIONS INC·Filed 2017·Granted Apr 21, 2020·0 cites·25 claims
- 2763US10469072B2Stacked auxiliary field-effect transistors with buffers for radio frequency applicationsSKYWORKS SOLUTIONS INC·Filed 2017·Granted Nov 5, 2019·0 cites·20 claims
- 2861US12375078B2Switch with gate or body connected linearizerSKYWORKS SOLUTIONS INC·Filed 2020·Granted Jul 29, 2025·0 cites·20 claims
- 2961US10446505B2Backside substrate openings in transistor devicesSKYWORKS SOLUTIONS INC·Filed 2018·Granted Oct 15, 2019·0 cites·19 claims
- 3060US10431612B2Switches with multiple field-effect transistors having proximity electrodesSKYWORKS SOLUTIONS INC·Filed 2018·Granted Oct 1, 2019·0 cites·17 claims
- 3157US10256197B2Radio-frequency isolation using front side openingSKYWORKS SOLUTIONS INC·Filed 2016·Granted Apr 9, 2019·0 cites·20 claims
- 3255US10700646B2pHEMT switch circuits with enhanced linearity performanceSKYWORKS SOLUTIONS INC·Filed 2019·Granted Jun 30, 2020·0 cites·20 claims
- 3353US10181428B2Silicon on porous siliconSKYWORKS SOLUTIONS INC·Filed 2016·Granted Jan 15, 2019·0 cites·13 claims
- 3449US10211789B2PHEMT components with enhanced linearity performanceSKYWORKS SOLUTIONS INC·Filed 2017·Granted Feb 19, 2019·0 cites·20 claims
- 3548US8509682B2Compact switch with enhanced linearity performancePRIKHODKO DIMA·Filed 2012·Granted Aug 13, 2013·0 cites·21 claims
- 3648US2017287935A1Variable buried oxide thickness for silicon-on-insulator devicesSKYWORKS SOLUTIONS INC·Filed 2017·Application pending·0 cites
- 3748US2017287855A1Variable handle wafer resistivity for silicon-on-insulator devicesSKYWORKS SOLUTIONS INC·Filed 2017·Application pending·0 cites
- 3842US2008203478A1High Frequency Switch With Low Loss, Low Harmonics, And Improved Linearity PerformancePRIKHODKO DIMA·Filed 2008·Application pending·0 cites
- 3937US2017033135A1Integrated passive device on soi substrateSKYWORKS SOLUTIONS INC·Filed 2016·Application pending·0 cites
- 4036US2016379943A1Method and apparatus for high performance passive-active circuit integrationSKYWORKS SOLUTIONS INC·Filed 2016·Application pending·0 cites
- 4136US2016322385A1Substrate bias for field-effect transistor devicesSKYWORKS SOLUTIONS INC·Filed 2016·Application pending·0 cites
- 4236US2016336344A1Silicon-on-insulator devices having contact layerSKYWORKS SOLUTIONS INC·Filed 2016·Application pending·0 cites
- 4335US2016009548A1Microelectromechanical systems having contaminant control featuresSKYWORKS SOLUTIONS INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →