Inventor · disambiguated record
Jennifer A. Oakley
Also filed as: OAKLEY JENNIFER · OAKLEY JENNIFER A · OAKLEY JENNIFER ANN
9 granted patents·4 pending applications·17 citations·filing 2013–2024
81Inventor score
Technology areasH10W
Top patents by PatentIndex Score
13 records- 0192US9401323B1Protected through semiconductor via (TSV)IBM·Filed 2015·Granted Jul 26, 2016·8 cites·10 claims
- 0282US9536784B1Integrated circuit (IC) chips with through silicon vias (TSV) and method of forming the ICGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 3, 2017·4 cites·17 claims
- 0381US9673095B2Protected through semiconductor via (TSV)IBM·Filed 2016·Granted Jun 6, 2017·3 cites·20 claims
- 0473US9728450B2Insulating a via in a semiconductor substrateIBM·Filed 2015·Granted Aug 8, 2017·2 cites·8 claims
- 0570US11810870B2Moisture seal for photonic devicesGLOBALFOUNDRIES US INC·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
- 0660US12438084B2Dual-metal ultra thick metal (UTM) structureIBM·Filed 2021·Granted Oct 7, 2025·0 cites·19 claims
- 0760US2025336846A1Tsv moisture barrierIBM·Filed 2024·Application pending·0 cites
- 0857US11587888B2Moisture seal for photonic devicesGLOBALFOUNDRIES US INC·Filed 2019·Granted Feb 21, 2023·0 cites·18 claims
- 0952US2015097274A1Through-silicon via structure and method for improving beol dielectric performanceIBM·Filed 2014·Application pending·0 cites
- 1051US10079175B2Insulating a via in a semiconductor substrateIBM·Filed 2017·Granted Sep 18, 2018·0 cites·10 claims
- 1149US2015069608A1Through-silicon via structure and method for improving beol dielectric performanceIBM·Filed 2013·Application pending·0 cites
- 1246US9728506B2Strain engineering devices using partial depth films in through-substrate viasGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 8, 2017·0 cites·18 claims
- 1333US2016379818A1Insulating a via in a semiconductor substrateGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →