Inventor · disambiguated record
Jeong-Heon Park
Also filed as: PARK JEONG-HEON
41 granted patents·13 pending applications·70 citations·filing 2003–2025
96Inventor score
Top patents by PatentIndex Score
54 records- 0194US9515252B1Low degradation MRAM encapsulation process using silicon-rich silicon nitride filmIBM·Filed 2015·Granted Dec 6, 2016·13 cites·20 claims
- 0287US10910552B2Magnetic memory device, method for manufacturing the same, and substrate treating apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·4 cites·12 claims
- 0384US9065039B2Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the samePARK JEONG HEON·Filed 2014·Granted Jun 23, 2015·5 cites·6 claims
- 0483US9799823B1High temperature endurable MTJ stackIBM·Filed 2016·Granted Oct 24, 2017·4 cites·10 claims
- 0582US10388859B2Method of manufacturing a magnetoresistive random access memory device and method of manufacturing a semiconductor chip including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 20, 2019·2 cites·20 claims
- 0681US9893273B2Light element doped low magnetic moment material spin torque transfer MRAMIBM·Filed 2016·Granted Feb 13, 2018·6 cites·20 claims
- 0781US7442646B2Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurrySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 28, 2008·6 cites·19 claims
- 0879US10468455B2Simplified double magnetic tunnel junctionsIBM·Filed 2016·Granted Nov 5, 2019·4 cites·20 claims
- 0978US10230043B2Boron segregation in magnetic tunnel junctionsIBM·Filed 2017·Granted Mar 12, 2019·2 cites·12 claims
- 1076US8772846B2Magnetic tunneling junction devices, memories, memory systems, and electronic devicesPARK JEONG HEON·Filed 2012·Granted Jul 8, 2014·4 cites·29 claims
- 1174US2024249760A1Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1273US10714678B2Magnetoresistive random access memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 14, 2020·2 cites·8 claims
- 1373US10256399B2Fabricating a cap layer for a magnetic random access memory (MRAM) deviceIBM·Filed 2016·Granted Apr 9, 2019·2 cites·16 claims
- 1471US11535930B2Sputtering apparatus and method of fabricating magnetic memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 27, 2022·0 cites·15 claims
- 1570US12446474B2Magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·19 claims
- 1670US11834738B2Sputtering apparatus and method of fabricating magnetic memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·7 claims
- 1770US9087977B2Semiconductor device having pinned layer with enhanced thermal endurancePARK JEONG-HEON·Filed 2014·Granted Jul 21, 2015·2 cites·20 claims
- 1869US12245518B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 4, 2025·0 cites·20 claims
- 1968US11659770B2Semiconductor device, magnetoresistive random access memory device, and semiconductor chip including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 23, 2023·0 cites·20 claims
- 2067US11942128B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·18 claims
- 2166US9698339B1Magnetic tunnel junction encapsulation using hydrogenated amorphous semiconductor materialIBM·Filed 2015·Granted Jul 4, 2017·1 cites·17 claims
- 2266US8947914B2Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the samePARK JEONG HEON·Filed 2012·Granted Feb 3, 2015·1 cites·16 claims
- 2365US10777737B2Magnetoresistive random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 15, 2020·0 cites·20 claims
- 2464US8772887B2Magnetic deviceLIM WOO-CHANG·Filed 2012·Granted Jul 8, 2014·1 cites·17 claims
- 2561US10804458B2Boron segregation in magnetic tunnel junctionsIBM·Filed 2019·Granted Oct 13, 2020·0 cites·6 claims
- 2660US11205679B2Magnetic memory device including a free layer and a pinned layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 21, 2021·0 cites·19 claims
- 2759US2025234788A1Magnetic memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2858US10559746B2Magnetoresistive random access memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 11, 2020·0 cites·20 claims
- 2958US6858452B2Method for isolating self-aligned contact padsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 22, 2005·6 cites·16 claims
- 3055US2025301917A1Magnetic memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3155US2023111057A1Magnetic tunnel junction device and stochastic computing system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3254US9356228B2Magnetic tunneling junction devices, memories, memory systems, and electronic devicesPARK JEONG HEON·Filed 2015·Granted May 31, 2016·0 cites·15 claims
- 3353US12295268B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 6, 2025·0 cites·20 claims
- 3453US11535929B2Apparatus for depositing a substrate and deposition system having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 27, 2022·0 cites·16 claims
- 3553US6875997B2Test patterns and methods of controlling CMP process using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 5, 2005·3 cites·5 claims
- 3653US2009068839A1Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurryKIM SUNG-JUN·Filed 2008·Application pending·0 cites
- 3751US12315542B2Memristor element with a magnetic domain wall in a magnetic free layer moved by spin orbit torque, synapse element and neuromorphic processor including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 3850US9666789B2Semiconductor device having pinned layer with enhanced thermal enduranceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 30, 2017·0 cites·17 claims
- 3949US8987798B2Magnetic tunneling junction devices, memories, memory systems, and electronic devicesPARK JEONG HEON·Filed 2014·Granted Mar 24, 2015·0 cites·19 claims
- 4049US7294516B2Test patterns and methods of controlling CMP process using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 13, 2007·0 cites·11 claims
- 4149US7247256B2CMP slurry for forming aluminum film, CMP method using the slurry, and method for forming aluminum wiring using the CMP methodSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 24, 2007·2 cites·8 claims
- 4249US2025383844A1Probabilistic device that supports random bit generationSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 4348US2020066791A1Simplified double magnetic tunnel junctionsIBM·Filed 2019·Application pending·0 cites
- 4447US9985202B2Method of fabricating memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 29, 2018·0 cites·19 claims
- 4545US10510391B2Magnetic exchange coupled MTJ free layer having low switching current and high data retentionIBM·Filed 2017·Granted Dec 17, 2019·0 cites·10 claims
- 4645US10510390B2Magnetic exchange coupled MTJ free layer having low switching current and high data retentionIBM·Filed 2017·Granted Dec 17, 2019·0 cites·22 claims
- 4745US2020176511A1Semiconductor device including spin-orbit torque lineSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 4842US2022320418A1Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 4941US11127786B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 21, 2021·0 cites·17 claims
- 5041US10629807B2Process control method and process control system for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 21, 2020·0 cites·14 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Jeong-Heon Park files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →