US2009068839A1PendingUtilityA1

Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry

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Assignee: KIM SUNG-JUNPriority: Aug 3, 2004Filed: Jun 19, 2008Published: Mar 12, 2009
Est. expiryAug 3, 2024(expired)· nominal 20-yr term from priority
Inventors:Sung Jun KimJeong-Heon ParkChang-Ki HongJae-Dong Lee
H10P 52/403H10P 52/00C09G 1/02
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Claims

Abstract

A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming metal wiring using the slurry. The slurry may include a polishing agent, an oxidant, and at least one defect inhibitor to protect the metal film. The CMP method and method of forming metal wiring may employ one or two slurries with at least one of the slurries including at least one defect inhibitor.

Claims

exact text as granted — not AI-modified
1 .- 21 . (canceled) 
   
   
       22 . A chemical mechanical polishing (CMP) method for a metal film formed on a semiconductor substrate, the method comprising:
 preparing a slurry including a polishing agent, an oxidant, and at least one defect inhibitor to protect the metal film; and   performing chemical mechanical polishing (CMP) of the metal film using the slurry.   
   
   
       23 . The method of  claim 22 , wherein a removal rate selectivity of the slurry is 20-1:1. 
   
   
       24 . The method of  claim 23 , wherein the removal rate selectivity of the slurry is 17-1.5:1. 
   
   
       25 . The method of  claim 22 , wherein a first of the at least one defect inhibitors forms a protective layer on the metal film. 
   
   
       26 . The method of  claim 22 , wherein the first of the at least one defect inhibitors adsorbs onto a surface of the metal film. 
   
   
       27 . The method of  claim 22 , wherein the first of the at least one defect inhibitors includes a polymeric compound further including a carboxyl group. 
   
   
       28 . The method of  claim 27 , wherein the first of the at least one defect inhibitors includes a co-polymer further including acrylic acid. 
   
   
       29 . The method of  claim 28 , wherein a content of the first of the at least one defect inhibitors is in a range of 0.01-20 weight % (inclusive) of a total weight of the slurry. 
   
   
       30 . The method of  claim 27 , wherein the first of the at least one defect inhibitors includes at least one material selected from the group consisting of PAA, PAMA, salts thereof, and mixtures thereof. 
   
   
       31 . The method of  claim 30 , further comprising a chelating agent. 
   
   
       32 . The method of  claim 31 , wherein a content of the chelating agent is in a range of 0.01-20 weight % (inclusive) of a total weight of the slurry. 
   
   
       33 . The method of  claim 31 , wherein the chelating agent includes at least one material selected from the group consisting of EDTA, NTA, DTPA, HEDTA, MGDA, salts thereof, and mixtures thereof. 
   
   
       34 . The method of  claim 22 , wherein a content of the polishing agent is in a range of 0.5-20 weight % (inclusive) of a total weight of the slurry. 
   
   
       35 . The method of  claim 34 , wherein the polishing agent includes at least one material selected from the group consisting of colloidal silica and fumed silica. 
   
   
       36 . The method of  claim 22 , wherein a content of the oxidant is in a range of 0.5-5 weight % (inclusive) of a total weight of the slurry. 
   
   
       37 . The method of  claim 36 , wherein the oxidant includes at least one material selected from the group consisting of hydrogen peroxide and ammonium persulfate. 
   
   
       38 . The method of  claim 30 , further comprising a pH controller for controlling a pH of the slurry. 
   
   
       39 . The method of  claim 38 , wherein the pH controller includes at least one material selected from the group consisting of H 3 PO 4 , HNO 3 , and H 2 SO 4 . 
   
   
       40 . The method of  claim 38 , wherein the pH controller lowers the pH of the slurry and raises a zeta potential of the metal film between the metal film and the slurry. 
   
   
       41 . The method of  claim 30 , wherein the first of the at least one defect inhibitors further lowers a pH of the slurry. 
   
   
       42 . The method of  claim 41 , wherein the first of the at least one defect inhibitors further includes H+ ions. 
   
   
       43 . The method of  claim 22 , wherein the metal film is an aluminum or aluminum alloy film. 
   
   
       44 . The method of  claim 22 , wherein the metal film forms a wiring or a plug. 
   
   
       45 . A chemical mechanical polishing (CMP) method for a metal film formed on a semiconductor substrate, the method comprising:
 preparing a first slurry including a polishing agent and an oxidant;   performing chemical mechanical polishing (CMP) of the metal film using the first slurry;   preparing a second slurry including a polishing agent, an oxidant, and at least one defect inhibitor to protect the metal film; and   performing chemical mechanical polishing (CMP) of the metal film using the second slurry.   
   
   
       46 . The method of  claim 45 , wherein a removal rate selectivity of the first slurry is greater than removal rate selectivity of the second slurry. 
   
   
       47 . The method of  claim 46 , wherein the removal rate selectivity of the first slurry is >50:1 and the removal rate selectivity of the second slurry is 20-1:1. 
   
   
       48 . The method of  claim 47 , wherein the removal rate selectivity of the second slurry is 17-1.5:1. 
   
   
       49 . The method of  claim 45 , wherein a first of the at least one defect inhibitors forms a protective layer on the metal film. 
   
   
       50 . The method of  claim 45 , wherein the first of the at least one defect inhibitors adsorbs onto a surface of the metal film. 
   
   
       51 . The method of  claim 45 , wherein the first of the at least one defect inhibitors includes a polymeric compound further including a carboxyl group. 
   
   
       52 . The method of  claim 51 , wherein the first of the at least one defect inhibitors includes a co-polymer further including acrylic acid. 
   
   
       53 . The method of  claim 52 , wherein a content of the first of the at least one defect inhibitors is in a range of 0.01-20 weight % (inclusive) of a total weight of the slurry. 
   
   
       54 . The method of  claim 51 , wherein the first of the at least one defect inhibitors includes at least one material selected from the group consisting of PAA, PAMA, salts thereof, and mixtures thereof. 
   
   
       55 . The method of  claim 54 , further comprising a chelating agent. 
   
   
       56 . The method of  claim 55 , wherein a content of the chelating agent is in a range of 0.01-20 weight % (inclusive) of a total weight of the slurry. 
   
   
       57 . The method of  claim 55 , wherein the chelating agent includes at least one material selected from the group consisting of EDTA, NTA, DTPA, HEDTA, MGDA, salts thereof, and mixtures thereof. 
   
   
       58 . The method of  claim 45 , wherein a content of the polishing agent is in a range of 0.5-20 weight % (inclusive) of a total weight of the slurry. 
   
   
       59 . The method of  claim 58 , wherein the polishing agent includes at least one material selected from the group consisting of colloidal silica and fumed silica. 
   
   
       60 . The method of  claim 45 , wherein a content of the oxidant is in a range of 0.5-5 weight % (inclusive) of a total weight of the slurry. 
   
   
       61 . The method of  claim 60 , wherein the oxidant includes at least one material selected from the group consisting of hydrogen peroxide and ammonium persulfate. 
   
   
       62 . The method of  claim 54 , further comprising a pH controller for controlling a pH of the slurry. 
   
   
       63 . The method of  claim 62 , wherein the pH controller includes at least one material selected from the group consisting of H 3 PO 4 , HNO 3 , and H 2 SO 4 . 
   
   
       64 . The method of  claim 62 , wherein the pH controller lowers the pH of the slurry and raises a zeta potential of the metal film between the metal film and the slurry. 
   
   
       65 . The method of  claim 54 , wherein the first of the at least one defect inhibitors further lowers a pH of the slurry. 
   
   
       66 . The method of  claim 65 , wherein the first of the at least one defect inhibitors further includes H+ ions. 
   
   
       67 . The method of  claim 45 , wherein the metal film is an aluminum or aluminum alloy film. 
   
   
       68 . The method of  claim 45 , wherein the metal film forms a wiring or a plug.

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