Inventor · disambiguated record
Jens-Peer Stengl
Also filed as: STENGL JENS P · STENGL JENS-PEER
19 granted patents·421 citations·filing 1981–2015
95Inventor score
Files withSIEMENS AG7INFINEON TECHNOLOGIES AG6WAHL UWE2INFINEON TECHNOLOGIES AUSTRIA1INFINEON TECHNOLOGIES AUSTRIA AG1
Top patents by PatentIndex Score
19 records- 0191US4459498ASwitch with series-connected MOS-FETsSIEMENS AG·Filed 1981·Granted Jul 10, 1984·52 cites·2 claims
- 0289US6271562B1Semiconductor component which can be controlled by a field effectINFINEON TECHNOLOGIES AG·Filed 1999·Granted Aug 7, 2001·106 cites·15 claims
- 0387US6870201B1High voltage resistant edge structure for semiconductor componentsINFINEON TECHNOLOGIES AG·Filed 1998·Granted Mar 22, 2005·74 cites·30 claims
- 0484US9431379B2Signal transmission arrangementINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Aug 30, 2016·4 cites·23 claims
- 0584US8970000B2Signal transmission arrangementKERBER MARTIN·Filed 2010·Granted Mar 3, 2015·7 cites·34 claims
- 0679US8319573B2Signal transmission arrangementKANSCHAT PETER·Filed 2009·Granted Nov 27, 2012·10 cites·27 claims
- 0776US4561003AField effect transistorSIEMENS AG·Filed 1984·Granted Dec 24, 1985·26 cites·7 claims
- 0871US6465863B1Power diode structureINFINEON TECHNOLOGIES AG·Filed 1999·Granted Oct 15, 2002·31 cites·12 claims
- 0970US8278730B2High voltage resistance coupling structureWAHL UWE·Filed 2009·Granted Oct 2, 2012·4 cites·8 claims
- 1067US6037631ASemiconductor component with a high-voltage endurance edge structureSIEMENS AG·Filed 1998·Granted Mar 14, 2000·28 cites·12 claims
- 1165US6812524B2Field effect controlled semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 2, 2004·12 cites·14 claims
- 1264US4502070AFET Controlled thyristorSIEMENS AG·Filed 1981·Granted Feb 26, 1985·18 cites·6 claims
- 1362US5311052APlanar semiconductor component with stepped channel stopper electrodeSIEMENS AG·Filed 1982·Granted May 10, 1994·16 cites·2 claims
- 1462US4497109AMethod of fabricating light-controlled thyristor utilizing selective etching and ion-implantationSIEMENS AG·Filed 1984·Granted Feb 5, 1985·19 cites·5 claims
- 1558US7710215B2Semiconductor configuration having an integrated coupler and method for manufacturing such a semiconductor configurationINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted May 4, 2010·1 cites·24 claims
- 1650US8790985B2High voltage resistance coupling structureWAHL UWE·Filed 2012·Granted Jul 29, 2014·0 cites·12 claims
- 1742US6831327B2Vertically structured power semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 14, 2004·1 cites·6 claims
- 1839US6309974B1Method for eliminating residual oxygen impurities from silicon wafers pulled from a crucibleINFINEON TECHNOLOGIES AG·Filed 1998·Granted Oct 30, 2001·7 cites·10 claims
- 1937US5726478AIntegrated power semiconductor component having a substrate with a protective structure in the substrateSIEMENS AG·Filed 1996·Granted Mar 10, 1998·5 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →