Inventor · disambiguated record
Jeno Tihanyi
Also filed as: TIHANYI JENO · TIHANYI JENOE · TIHANYI LEGAL REPRESENTATIVE N
32 granted patents·1 pending application·1,167 citations·filing 1978–2006
98Inventor score
Top patents by PatentIndex Score
33 records- 0198US4631565AMISFET with input amplifierSIEMENS AG·Filed 1983·Granted Dec 23, 1986·170 cites·6 claims
- 0295US6184555B1Field effect-controlled semiconductor componentSIEMENS AG·Filed 1997·Granted Feb 6, 2001·479 cites·3 claims
- 0391US4459498ASwitch with series-connected MOS-FETsSIEMENS AG·Filed 1981·Granted Jul 10, 1984·52 cites·2 claims
- 0488US6762455B2Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 13, 2004·47 cites·9 claims
- 0587US7294885B2Reverse blocking semiconductor component with charge compensationINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 13, 2007·15 cites·12 claims
- 0680US6507071B1Lateral high-voltage sidewall transistorSIEMENS AG·Filed 2000·Granted Jan 14, 2003·28 cites·12 claims
- 0778US4947234ASemiconductor component with power MOSFET and control circuitSIEMENS AG·Filed 1987·Granted Aug 7, 1990·52 cites·21 claims
- 0877US6847091B2Vertical semiconductor component having a reduced electrical surface fieldINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 25, 2005·23 cites·7 claims
- 0976US4630084AVertical mis-field effect transistor with low forward resistanceSIEMENS AG·Filed 1985·Granted Dec 16, 1986·34 cites·6 claims
- 1076US4561003AField effect transistorSIEMENS AG·Filed 1984·Granted Dec 24, 1985·26 cites·7 claims
- 1175US7375395B2Vertical field-effect transistor in source-down structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2005·Granted May 20, 2008·5 cites·20 claims
- 1272US6912153B2Non-volatile memory cellINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 28, 2005·19 cites·15 claims
- 1371US4595966AFor the protection of an MOS-transistor from overloadingSIEMENS AG·Filed 1983·Granted Jun 17, 1986·16 cites·5 claims
- 1468US7199403B2Semiconductor arrangement having a MOSFET structure and a zener deviceINFINEON TECHNOLOGIES AG·Filed 2004·Granted Apr 3, 2007·13 cites·19 claims
- 1568US4633292ASemiconductor component with planar structureSIEMENS AG·Filed 1986·Granted Dec 30, 1986·25 cites·10 claims
- 1667US6646304B1Universal semiconductor wafer for high-voltage semiconductor componentsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 11, 2003·11 cites·13 claims
- 1764US4502070AFET Controlled thyristorSIEMENS AG·Filed 1981·Granted Feb 26, 1985·18 cites·6 claims
- 1862US5311052APlanar semiconductor component with stepped channel stopper electrodeSIEMENS AG·Filed 1982·Granted May 10, 1994·16 cites·2 claims
- 1962US4497109AMethod of fabricating light-controlled thyristor utilizing selective etching and ion-implantationSIEMENS AG·Filed 1984·Granted Feb 5, 1985·19 cites·5 claims
- 2061US4748533AIntegrated circuit for the protection of subscriber lines against overvoltagesSIEMENS AG·Filed 1986·Granted May 31, 1988·21 cites·15 claims
- 2159US4344080AField effect transistorSIEMENS AG·Filed 1979·Granted Aug 10, 1982·10 cites·9 claims
- 2255US4543596AInsulated-gate field-effect transistor (IGFET) with injector zoneSIEMENS AG·Filed 1983·Granted Sep 24, 1985·12 cites·6 claims
- 2351US7091533B2Semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 15, 2006·4 cites·14 claims
- 2451US7038272B2Method for forming a channel zone of a transistor and NMOS transistorINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 2, 2006·4 cites·5 claims
- 2551US4355320ALight-controlled transistorSIEMENS AG·Filed 1980·Granted Oct 19, 1982·12 cites·4 claims
- 2648US4626886APower transistorSIEMENS AG·Filed 1984·Granted Dec 2, 1986·9 cites·7 claims
- 2740US2007075375A1Field effect semiconductor component and method for its productionTIHANYI JENO·Filed 2006·Application pending·0 cites
- 2838US4641163AMIS-field effect transistor with charge carrier injectionSIEMENS AG·Filed 1983·Granted Feb 3, 1987·5 cites·11 claims
- 2938US4584593AInsulated-gate field-effect transistor (IGFET) with charge carrier injectionSIEMENS AG·Filed 1983·Granted Apr 22, 1986·5 cites·7 claims
- 3036US4266235AOptoelectronic sensor according to the principle of carrier injectionSIEMENS AG·Filed 1978·Granted May 5, 1981·5 cites·9 claims
- 3135US4231810AProcess for producing bi-polar charge coupled devices by ion-implantationSIEMENS AG·Filed 1979·Granted Nov 4, 1980·6 cites·8 claims
- 3231US4578595ACircuit arrangement for drive of a thyristor with lightSIEMENS AG·Filed 1984·Granted Mar 25, 1986·2 cites·8 claims
- 3327US4524375APhoto transistorSIEMENS AG·Filed 1984·Granted Jun 18, 1985·4 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →