Inventor · disambiguated record
Jenn-Yue Wang
Also filed as: WANG JENN Y · WANG JENN YUE
8 granted patents·6 pending applications·325 citations·filing 2005–2024
83Inventor score
Top patents by PatentIndex Score
14 records- 0198US9929055B2Method to grow thin epitaxial films at low temperatureAPPLIED MATERIALS INC·Filed 2016·Granted Mar 27, 2018·313 cites·20 claims
- 0289US9530638B2Method to grow thin epitaxial films at low temperatureAPPLIED MATERIALS INC·Filed 2015·Granted Dec 27, 2016·5 cites·20 claims
- 0374US11162170B2Methods for reducing material overhang in a feature of a substrateAPPLIED MATERIALS INC·Filed 2015·Granted Nov 2, 2021·2 cites·18 claims
- 0474US7659204B2Oxidized barrier layerAPPLIED MATERIALS INC·Filed 2007·Granted Feb 9, 2010·4 cites·11 claims
- 0570US12442104B2Nanocrystalline diamond with amorphous interfacial layerAPPLIED MATERIALS INC·Filed 2023·Granted Oct 14, 2025·0 cites·17 claims
- 0660US12438005B2Low temperature selective etching of silicon nitride using microwave plasmaAPPLIED MATERIALS INC·Filed 2022·Granted Oct 7, 2025·0 cites·19 claims
- 0760US2025117754A1Epitaxial film defect determinationAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0856US8293647B2Bottom up plating by organic surface passivation and differential plating retardationWANG JENN-YUE·Filed 2009·Granted Oct 23, 2012·1 cites·17 claims
- 0951US11355391B2Method for forming a metal gapfillAPPLIED MATERIALS INC·Filed 2020·Granted Jun 7, 2022·0 cites·19 claims
- 1044US2007059502A1Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layerAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 1144US2008254613A1Methods for forming metal interconnect structure for thin film transistor applicationsAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 1242US2007209925A1Etch and sidewall selectivity in plasma sputteringAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 1341US2006251872A1Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereofWANG JENN Y·Filed 2005·Application pending·0 cites
- 1438US2018145034A1Methods To Selectively Deposit Corrosion-Free Metal ContactsAPPLIED MATERIALS INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →