Inventor · disambiguated record
Jeong Hwan Yang
Also filed as: YANG JEONG-HWAN
33 granted patents·9 pending applications·335 citations·filing 1999–2017
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD24YANG JEONG-HWAN5MAEDA SHIGENOBU4KIM JONGHAE1KOREA AEROSPACE RES INST1
Top patents by PatentIndex Score
42 records- 0197US7550332B2Non-planar transistor having germanium channel region and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 23, 2009·64 cites·14 claims
- 0292US8779784B2Insulation resistance measuring circuit free from influence of battery voltageYANG JEONG HWAN·Filed 2010·Granted Jul 15, 2014·19 cites·16 claims
- 0388US8816440B2Low noise and high performance LSI deviceMAEDA SHIGENOBU·Filed 2011·Granted Aug 26, 2014·6 cites·25 claims
- 0485US6653699B1Polysilicon/Amorphous silicon gate structures for integrated circuit field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 25, 2003·31 cites·2 claims
- 0584US7545002B2Low noise and high performance LSI device, layout and manufacturing methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 9, 2009·14 cites·12 claims
- 0684US6548877B2Metal oxide semiconductor field effect transistor for reducing resistance between source and drainSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 15, 2003·27 cites·7 claims
- 0782US9018905B2Battery management apparatus of high voltage battery for hybrid vehicleLIM JAE HWAN·Filed 2010·Granted Apr 28, 2015·8 cites·13 claims
- 0882US6159810AMethods of fabricating gates for integrated circuit field effect transistors including amorphous impurity layersSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 12, 2000·43 cites·17 claims
- 0981US8866438B2System and method for providing reactive power using electric car batteryLEE KIL SU·Filed 2011·Granted Oct 21, 2014·12 cites·2 claims
- 1081US7227175B2Semiconductor device with different lattice propertiesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 5, 2007·5 cites·13 claims
- 1180US10680447B2Charge equalization apparatus for a battery stringSK INNOVATION CO LTD·Filed 2017·Granted Jun 9, 2020·3 cites·5 claims
- 1280US9069024B2Insulation resistance measurement circuit having self-test function without generating leakage currentYANG JEONG HWAN·Filed 2011·Granted Jun 30, 2015·9 cites·18 claims
- 1380US8618629B2Apparatus and method for through silicon via impedance matchingKIM JONGHAE·Filed 2009·Granted Dec 31, 2013·8 cites·32 claims
- 1480US7151019B2Method of manufacturing a semiconductor device with different lattice propertiesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 19, 2006·5 cites·13 claims
- 1579US6806157B2Metal oxide semiconductor field effect transistor for reducing resistance between source and drain and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 19, 2004·19 cites·6 claims
- 1677US7456723B2Inductors having input/output paths on opposing sidesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 25, 2008·6 cites·7 claims
- 1776US9093306B2Low noise and high performance LSI deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 28, 2015·2 cites·15 claims
- 1876US7214993B2Non-planar transistor having germanium channel region and method of manufacturing the sameSAMSUNG ELECTONICS CO LTD·Filed 2004·Granted May 8, 2007·18 cites·11 claims
- 1975US7320920B2Non-volatile flash memory device having at least two different channel concentrations and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 22, 2008·5 cites·21 claims
- 2071US7339213B2Semiconductor device having a triple gate transistor and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 4, 2008·11 cites·7 claims
- 2169US7964454B2Low noise and high performance LSI device, layout and manufacturing methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 21, 2011·2 cites·90 claims
- 2269US7956420B2Low noise and high performance LSI device, layout and manufacturing methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 7, 2011·2 cites·22 claims
- 2366US8159006B2Semiconductor device having a triple gate transistor and method for manufacturing the sameMAEDA SHIGENOBU·Filed 2008·Granted Apr 17, 2012·2 cites·7 claims
- 2460US6740587B2Semiconductor device having a metal silicide layer and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 25, 2004·6 cites·24 claims
- 2558US9899386B2Low noise and high performance LSI deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 20, 2018·0 cites·18 claims
- 2658US9425182B2Low noise and high performance LSI deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 23, 2016·0 cites·14 claims
- 2755US10274584B2Apparatus and method for generating bidirectional chirp signal by using phase accumulation polynomialKOREA AEROSPACE RES INST·Filed 2014·Granted Apr 30, 2019·1 cites·7 claims
- 2855US7129517B2Semiconductor device with different lattice propertiesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 31, 2006·3 cites·20 claims
- 2954US2014117414A1Semiconductor device having a triple gate transistor and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 3052US8710555B2Semiconductor device having a triple gate transistor and method for manufacturing the sameMAEDA SHIGENOBU·Filed 2012·Granted Apr 29, 2014·0 cites·3 claims
- 3151US9123811B2Semiconductor device having a triple gate transistor and method for manufacturing the sameMAEDA SHIGENOBU·Filed 2012·Granted Sep 1, 2015·0 cites·21 claims
- 3250US7391292B2Inductors having interconnect and inductor portions to provide combined magnetic fieldsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 24, 2008·3 cites·30 claims
- 3349US7932154B2Method of fabricating non-volatile flash memory device having at least two different channel concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 26, 2011·0 cites·9 claims
- 3447US2006232191A1Gate-controlled electron-emitter array panel, active matrix display including the same, and method of manufacturing the panelSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3546US2008006870A1Nonvolatile semiconductor memory device having double floating gate structure and method of manufacturing the sameYANG JEONG-HWAN·Filed 2007·Application pending·0 cites
- 3646US2014042974A1Detachable battery module, and method and apparatus for the charge equalization of a battery string using sameYANG JEONG HWAN·Filed 2011·Application pending·0 cites
- 3743US7288810B2Nonvolatile semiconductor memory device having double floating gate structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 30, 2007·1 cites·10 claims
- 3843US2004198007A1Semiconductor device having a metal silicide layer and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 3942US2008124859A1Methods of Forming CMOS Integrated Circuits Using Gate Sidewall Spacer Reduction TechniquesSUN MIN CHUL·Filed 2006·Application pending·0 cites
- 4040US2007222027A1Electronic fuse elements with constricted neck regions that support reliable fuse blowingYANG JEONG-HWAN·Filed 2006·Application pending·0 cites
- 4136US2007069309A1Buried well for semiconductor devicesLINDSAY RICHARD·Filed 2005·Application pending·0 cites
- 4234US2005130354A1Metal oxide semiconductor (MOS) transistor including a planarized material layer and method of fabricating the sameFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →