Inventor · disambiguated record
Jeng-Jiun Yang
Also filed as: YANG JENG-JIUN
14 granted patents·254 citations·filing 1990–2012
92Inventor score
Files withBULUCEA CONSTANTIN4NAT SEMICONDUCTOR CORP4YANG JENG-JIUN3INTEGRATED DEVICE TECH2PARKER D COURTNEY1
Top patents by PatentIndex Score
14 records- 0197US8163619B2Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zoneYANG JENG-JIUN·Filed 2009·Granted Apr 24, 2012·121 cites·46 claims
- 0291US8101479B2Fabrication of asymmetric field-effect transistors using L-shaped spacersPARKER D COURTNEY·Filed 2009·Granted Jan 24, 2012·32 cites·44 claims
- 0387US8735980B2Configuration and fabrication of semiconductor structure using empty and filled wellsNAT SEMICONDUCTOR CORP·Filed 2012·Granted May 27, 2014·7 cites·18 claims
- 0484US8304835B2Configuration and fabrication of semiconductor structure using empty and filled wellsBULUCEA CONSTANTIN·Filed 2009·Granted Nov 6, 2012·8 cites·82 claims
- 0582US8415752B2Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zoneYANG JENG-JIUN·Filed 2012·Granted Apr 9, 2013·5 cites·30 claims
- 0682US8410549B2Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocketBULUCEA CONSTANTIN·Filed 2009·Granted Apr 2, 2013·8 cites·20 claims
- 0779US8629027B1Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensionsBULUCEA CONSTANTIN·Filed 2011·Granted Jan 14, 2014·4 cites·34 claims
- 0875US7968921B2Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensionsNAT SEMICONDUCTOR CORP·Filed 2009·Granted Jun 28, 2011·4 cites·20 claims
- 0971US8084827B2Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknessesBULUCEA CONSTANTIN·Filed 2009·Granted Dec 27, 2011·3 cites·38 claims
- 1069US5825068AIntegrated circuits that include a barrier layer reducing hydrogen diffusion into a polysilicon resistorINTEGRATED DEVICE TECH·Filed 1997·Granted Oct 20, 1998·39 cites·14 claims
- 1163US5128731AStatic random access memory cell using a P/N-MOS transistorsINTEGRATED DEVICE TECH·Filed 1990·Granted Jul 7, 1992·22 cites·8 claims
- 1261US8304308B2Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link lengthYANG JENG-JIUN·Filed 2011·Granted Nov 6, 2012·1 cites·9 claims
- 1350US8030151B2Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link lengthNAT SEMICONDUCTOR CORP·Filed 2009·Granted Oct 4, 2011·0 cites·38 claims
- 1448US8377768B2Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknessesNAT SEMICONDUCTOR CORP·Filed 2011·Granted Feb 19, 2013·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →