Inventor · disambiguated record
Jhy-Jyi Sze
Also filed as: SZE JHY-JYI
129 granted patents·21 pending applications·345 citations·filing 1998–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD110UNITED MICROELECTRONICS CORP19TAIWAN SEMICONDUCTOR MFG6UNITED SEMICONDUCTOR CORP5SZE JHY-JYI2
Top patents by PatentIndex Score
150 records- 0197US11791357B2Composite BSI structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·5 cites·20 claims
- 0297US10515990B2Semiconductor devices having reduced noiseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·11 cites·20 claims
- 0396US11075242B2Semiconductor devices for image sensingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 27, 2021·14 cites·20 claims
- 0496US10991746B2High performance image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·7 cites·20 claims
- 0596US10367023B1Semiconductor image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 30, 2019·11 cites·20 claims
- 0695US11670663B2High performance image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
- 0795US11227889B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
- 0895US10276618B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·8 cites·20 claims
- 0995US9331032B2Hybrid bonding and apparatus for performing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 3, 2016·24 cites·20 claims
- 1094US11901388B2Device over photodetector pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 1194US11855237B2Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 26, 2023·2 cites·20 claims
- 1294US11211419B2Composite bsi structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·4 cites·20 claims
- 1393US11404460B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 1493US11004887B2Semiconductor image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·3 cites·20 claims
- 1593US10943940B2Image sensor comprising reflective guide layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·5 cites·20 claims
- 1693US10692914B2Implant damage free image sensor and method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 23, 2020·3 cites·20 claims
- 1793US10510797B2Semiconductor image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·7 cites·20 claims
- 1893US9954022B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·7 cites·20 claims
- 1992US10985201B2Image sensor including silicon over germanium layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·6 cites·20 claims
- 2092US10672934B2SPAD image sensor and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·7 cites·20 claims
- 2192US10269857B2Image sensor comprising reflective guide layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·5 cites·20 claims
- 2291US10177187B2Implant damage free image sensor and method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 8, 2019·6 cites·20 claims
- 2391US2025351606A1Pixel device on deep trench isolation (dti) structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2490US11088196B2Metal reflector grounding for noise reduction in light detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·2 cites·20 claims
- 2589US12414400B2High performance image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 2689US11699718B2Semiconductor image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·1 cites·20 claims
- 2789US11264525B2SPAD image sensor and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·2 cites·20 claims
- 2889US10797091B2Semiconductor imaging device having improved dark current performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·2 cites·20 claims
- 2989US7737479B2Image sensorUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jun 15, 2010·15 cites·8 claims
- 3089US7547573B2Image sensor and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jun 16, 2009·15 cites·12 claims
- 3189US2025351596A1Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3288US12495632B2Semiconductor image sensor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 9, 2025·1 cites·20 claims
- 3388US11063081B2Device over photodetector pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·4 cites·20 claims
- 3488US9515116B1Vertical transfer gate structure for a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor using global shutter captureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 6, 2016·5 cites·15 claims
- 3587US12369422B2Pixel device on deep trench isolation (DTI) structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 3687US9425343B2Mechanisms for forming image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 23, 2016·4 cites·22 claims
- 3787US2025311465A1High performance image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3886US12211876B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 3986US11901393B2Image sensor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·1 cites·20 claims
- 4086US9818788B2Vertical transfer gate structure for a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor using global shutter captureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·4 cites·20 claims
- 4186US2025359388A1Germanium-containing photodetector and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4285US12464839B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 4385US12396289B2Germanium-containing photodetector and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 4485US11158662B2Semiconductor image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·1 cites·20 claims
- 4585US10510789B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·2 cites·20 claims
- 4685US7518171B2Photo diode and related method for fabricationUNITED MICROELECTRONICS CORP·Filed 2006·Granted Apr 14, 2009·8 cites·10 claims
- 4784US12148782B2Composite BSI structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 4884US12100726B2High performance image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 4984US11984353B2High capacitance MIM device with self aligned spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·1 cites·20 claims
- 5084US2025349610A1High capacitance mim device with spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 150 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →