Inventor · disambiguated record
Jin Cai
Also filed as: CAI JIN · CAI JIN SONG
85 granted patents·9 pending applications·793 citations·filing 2002–2017
99Inventor score
Top patents by PatentIndex Score
94 records- 0198US9450381B1Monolithic integrated photonics with lateral bipolar and BiCMOSIBM·Filed 2015·Granted Sep 20, 2016·29 cites·9 claims
- 0297US9318585B1Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grownIBM·Filed 2015·Granted Apr 19, 2016·30 cites·6 claims
- 0397US8980667B2Charge sensors using inverted lateral bipolar junction transistorsCAI JIN·Filed 2012·Granted Mar 17, 2015·18 cites·14 claims
- 0497US8586441B1Germanium lateral bipolar junction transistorCAI JIN·Filed 2012·Granted Nov 19, 2013·32 cites·20 claims
- 0597US8445356B1Integrated circuit having back gating, improved isolation and reduced well resistance and method to fabricate sameCAI JIN·Filed 2012·Granted May 21, 2013·34 cites·13 claims
- 0697US7985633B2Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistorsIBM·Filed 2007·Granted Jul 26, 2011·57 cites·5 claims
- 0796US9726631B1Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown baseIBM·Filed 2016·Granted Aug 8, 2017·12 cites·20 claims
- 0896US9437718B1Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grownIBM·Filed 2015·Granted Sep 6, 2016·16 cites·14 claims
- 0996US8558282B1Germanium lateral bipolar junction transistorCAI JIN·Filed 2012·Granted Oct 15, 2013·26 cites·20 claims
- 1096US8441084B2Horizontal polysilicon-germanium heterojunction bipolar transistorCAI JIN·Filed 2011·Granted May 14, 2013·30 cites·20 claims
- 1195US9625409B1Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown baseIBM·Filed 2016·Granted Apr 18, 2017·11 cites·20 claims
- 1295US8705280B2Electrically programmable floating common gate CMOS device and applications thereofCAI JIN·Filed 2010·Granted Apr 22, 2014·23 cites·20 claims
- 1395US8557670B1SOI lateral bipolar junction transistor having a wide band gap emitter contactCAI JIN·Filed 2012·Granted Oct 15, 2013·22 cites·20 claims
- 1495US7700993B2CMOS EPROM and EEPROM devices and programmable CMOS invertersIBM·Filed 2007·Granted Apr 20, 2010·42 cites·25 claims
- 1594US9502504B2SOI lateral bipolar transistors having surrounding extrinsic base portionsIBM·Filed 2013·Granted Nov 22, 2016·20 cites·20 claims
- 1694US8415743B2ETSOI CMOS with back gatesCAI JIN·Filed 2011·Granted Apr 9, 2013·17 cites·11 claims
- 1793US9263583B2Integrated finFET-BJT replacement metal gateGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 16, 2016·16 cites·14 claims
- 1892US9899415B1System on chip fully-depleted silicon on insulator with rf and mm-wave integrated functionsIBM·Filed 2016·Granted Feb 20, 2018·7 cites·17 claims
- 1992US8852985B2Graphene pressure sensorsCAI JIN·Filed 2012·Granted Oct 7, 2014·15 cites·8 claims
- 2092US8815684B2Bulk finFET with super steep retrograde wellIBM·Filed 2012·Granted Aug 26, 2014·12 cites·25 claims
- 2192US8531001B2Complementary bipolar inverterCAI JIN·Filed 2011·Granted Sep 10, 2013·13 cites·20 claims
- 2292US8530287B2ETSOI CMOS with back gatesCAI JIN·Filed 2012·Granted Sep 10, 2013·13 cites·9 claims
- 2392US8466473B2Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETsCAI JIN·Filed 2010·Granted Jun 18, 2013·15 cites·25 claims
- 2492US7244976B2EEPROM device with substrate hot-electron injector for low-power programmingIBM·Filed 2005·Granted Jul 17, 2007·20 cites·7 claims
- 2591US8901680B2Graphene pressure sensorsCAI JIN·Filed 2012·Granted Dec 2, 2014·14 cites·8 claims
- 2690US8685817B1Metal gate structures for CMOS transistor devices having reduced parasitic capacitanceIBM·Filed 2012·Granted Apr 1, 2014·10 cites·11 claims
- 2789US8361872B2High performance low power bulk FET device and method of manufactureIBM·Filed 2010·Granted Jan 29, 2013·8 cites·19 claims
- 2889US7479418B2Methods of applying substrate bias to SOI CMOS circuitsIBM·Filed 2006·Granted Jan 20, 2009·13 cites·5 claims
- 2988US9887278B2Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic baseIBM·Filed 2015·Granted Feb 6, 2018·5 cites·10 claims
- 3088US9331097B2High speed bipolar junction transistor for high voltage applicationsIBM·Filed 2014·Granted May 3, 2016·9 cites·15 claims
- 3188US9059195B2Lateral bipolar transistors having partially-depleted intrinsic baseIBM·Filed 2013·Granted Jun 16, 2015·6 cites·10 claims
- 3288US8815669B2Metal gate structures for CMOS transistor devices having reduced parasitic capacitanceIBM·Filed 2013·Granted Aug 26, 2014·8 cites·5 claims
- 3388US8492794B2Vertical polysilicon-germanium heterojunction bipolar transistorCAI JIN·Filed 2011·Granted Jul 23, 2013·8 cites·15 claims
- 3485US9564429B2Lateral bipolar sensor with sensing signal amplificationIBM·Filed 2015·Granted Feb 7, 2017·5 cites·18 claims
- 3585US8809872B2Bulk finFET with super steep retrograde wellIBM·Filed 2013·Granted Aug 19, 2014·7 cites·8 claims
- 3685US7601569B2Partially depleted SOI field effect transistor having a metallized source side halo regionIBM·Filed 2007·Granted Oct 13, 2009·10 cites·6 claims
- 3784US8648403B2Dynamic memory cell structuresLUK WING K·Filed 2006·Granted Feb 11, 2014·9 cites·21 claims
- 3884US8526220B2Complementary SOI lateral bipolar for SRAM in a low-voltage CMOS platformCAI JIN·Filed 2011·Granted Sep 3, 2013·7 cites·20 claims
- 3984US8314463B2Method for fabricating super-steep retrograde well MOSFET on SOI or bulk silicon substrate, and device fabricated in accordance with the methodCAI JIN·Filed 2009·Granted Nov 20, 2012·9 cites·25 claims
- 4083US9040929B2Charge sensors using inverted lateral bipolar junction transistorsCAI JIN·Filed 2012·Granted May 26, 2015·4 cites·17 claims
- 4183US8917547B2Complementary SOI lateral bipolar for SRAM in a CMOS platformIBM·Filed 2013·Granted Dec 23, 2014·7 cites·6 claims
- 4283US7919812B2Partially depleted SOI field effect transistor having a metallized source side halo regionIBM·Filed 2009·Granted Apr 5, 2011·8 cites·14 claims
- 4382US8572616B2Apparatus, system, and method for managing z/OS batch jobs with prerequisitesCAI JIN SONG·Filed 2006·Granted Oct 29, 2013·21 cites·13 claims
- 4482US6870213B2EEPROM device with substrate hot-electron injector for low-powerIBM·Filed 2002·Granted Mar 22, 2005·25 cites·11 claims
- 4579US8895995B2Lateral silicon-on-insulator bipolar junction transistor radiation dosimeterIBM·Filed 2012·Granted Nov 25, 2014·3 cites·18 claims
- 4678US9742147B2Monolithic integrated photonics with lateral bipolar and BiCMOSIBM·Filed 2016·Granted Aug 22, 2017·2 cites·20 claims
- 4778US8929133B2Complementary SOI lateral bipolar for SRAM in a CMOS platformIBM·Filed 2012·Granted Jan 6, 2015·5 cites·13 claims
- 4876US9048280B2Vertical polysilicon-germanium heterojunction bipolar transistorIBM·Filed 2013·Granted Jun 2, 2015·3 cites·18 claims
- 4976US8927380B2SOI bipolar junction transistor with substrate bias voltagesCAI JIN·Filed 2012·Granted Jan 6, 2015·3 cites·14 claims
- 5076US8329564B2Method for fabricating super-steep retrograde well MOSFET on SOI or bulk silicon substrate, and device fabricated in accordance with the methodCAI JIN·Filed 2007·Granted Dec 11, 2012·5 cites·18 claims
Showing the top 50 of 94 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →