Inventor · disambiguated record
Jianjun Cao
Also filed as: CAO JIANJUN
64 granted patents·18 pending applications·782 citations·filing 2000–2025
99Inventor score
Files withEFFICIENT POWER CONVERSION CORP28INT RECTIFIER CORP26LIDOW ALEXANDER7CAO JIANJUN5UNIVERSAL ELECTRONICS INC4
Top patents by PatentIndex Score
82 records- 0196US8823012B2Enhancement mode GaN HEMT device with gate spacer and method for fabricating the sameLIDOW ALEXANDER·Filed 2012·Granted Sep 2, 2014·31 cites·11 claims
- 0296US8404508B2Enhancement mode GaN HEMT device and method for fabricating the sameLIDOW ALEXANDER·Filed 2010·Granted Mar 26, 2013·27 cites·5 claims
- 0396US6640144B1System and method for creating a controlling deviceUNIVERSAL ELECTRONICS INC·Filed 2000·Granted Oct 28, 2003·142 cites·30 claims
- 0495US6829512B2System and method for creating a controlling deviceUNIVERSAL ELECTRONICS INC·Filed 2003·Granted Dec 7, 2004·105 cites·25 claims
- 0595US6785579B2System and method for creating a controlling deviceUNIVERSAL ELECTRONICS INC·Filed 2003·Granted Aug 31, 2004·99 cites·12 claims
- 0694US8436398B2Back diffusion suppression structuresLIDOW ALEXANDER·Filed 2010·Granted May 7, 2013·21 cites·19 claims
- 0793US9607876B2Semiconductor devices with back surface isolationLIDOW ALEXANDER·Filed 2011·Granted Mar 28, 2017·13 cites·31 claims
- 0892US8350294B2Compensated gate MISFET and method for fabricating the sameEFFICIENT POWER CONVERSION CORP·Filed 2010·Granted Jan 8, 2013·16 cites·12 claims
- 0992US8338861B2III-nitride semiconductor device with stepped gate trench and process for its manufactureBRIERE MICHAEL A·Filed 2008·Granted Dec 25, 2012·18 cites·16 claims
- 1091US10312131B2Semiconductor devices with back surface isolationEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Jun 4, 2019·7 cites·4 claims
- 1191US8890168B2Enhancement mode GaN HEMT deviceEFFICIENT POWER CONVERSION CORP·Filed 2013·Granted Nov 18, 2014·14 cites·17 claims
- 1290US7579650B2Termination design for deep source electrode MOSFETINT RECTIFIER CORP·Filed 2007·Granted Aug 25, 2009·16 cites·6 claims
- 1389US10096702B2Multi-step surface passivation structures and methods for fabricating sameEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Oct 9, 2018·7 cites·24 claims
- 1489US9837438B2GaN transistors with polysilicon layers used for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2015·Granted Dec 5, 2017·6 cites·8 claims
- 1589US9214461B2GaN transistors with polysilicon layers for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·9 cites·12 claims
- 1689USRE39716ESystem and method for creating a controlling deviceUNIVERSAL ELECTRONICS INC·Filed 2005·Granted Jul 3, 2007·22 cites·39 claims
- 1788US7973304B2III-nitride semiconductor deviceINT RECTIFIER CORP·Filed 2007·Granted Jul 5, 2011·8 cites·23 claims
- 1887US8853749B2Ion implanted and self aligned gate structure for GaN transistorsLIDOW ALEXANDER·Filed 2012·Granted Oct 7, 2014·8 cites·17 claims
- 1987US7075147B2Low on resistance power MOSFET with variably spaced trenches and offset contactsINT RECTIFIER CORP·Filed 2004·Granted Jul 11, 2006·40 cites·10 claims
- 2085US8450721B2III-nitride power semiconductor deviceBEACH ROBERT·Filed 2011·Granted May 28, 2013·4 cites·17 claims
- 2184US9748347B2Gate with self-aligned ledged for enhancement mode GaN transistorsEFFICIENT POWER CONV CORP·Filed 2014·Granted Aug 29, 2017·5 cites·3 claims
- 2284US7619280B2Current sense trench type MOSFET with improved accuracy and ESD withstand capabilityINT RECTIFIER CORP·Filed 2005·Granted Nov 17, 2009·12 cites·4 claims
- 2384US7482654B2MOSgated power semiconductor device with source field electrodeINT RECTIFIER CORP·Filed 2005·Granted Jan 27, 2009·13 cites·19 claims
- 2482US10312260B2GaN transistors with polysilicon layers used for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Jun 4, 2019·3 cites·17 claims
- 2582US9171911B2Isolation structure in gallium nitride devices and integrated circuitsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Oct 27, 2015·6 cites·26 claims
- 2682US7161208B2Trench mosfet with field relief featureINT RECTIFIER CORP·Filed 2003·Granted Jan 9, 2007·30 cites·15 claims
- 2780US10508818B2Window air conditioner with side insulating sealing assemblyGD MIDEA AIR CONDITIONING EQUIPMENT CO LTD·Filed 2017·Granted Dec 17, 2019·3 cites·13 claims
- 2878US8952352B2III-nitride power deviceINT RECTIFIER CORP·Filed 2013·Granted Feb 10, 2015·2 cites·20 claims
- 2975US11121245B2Field plate structures with patterned surface passivation layers and methods for manufacturing thereofEFFICIENT POWER CONVERSION CORP·Filed 2020·Granted Sep 14, 2021·1 cites·21 claims
- 3075US8174051B2III-nitride power deviceCAO JIANJUN·Filed 2007·Granted May 8, 2012·7 cites·20 claims
- 3173US7390717B2Trench power MOSFET fabrication using inside/outside spacersINT RECTIFIER CORP·Filed 2005·Granted Jun 24, 2008·6 cites·20 claims
- 3273US6639276B2Power MOSFET with ultra-deep base and reduced on resistanceINT RECTIFIER CORP·Filed 2002·Granted Oct 28, 2003·15 cites·11 claims
- 3373US6563197B1MOSgated device termination with guard rings under field plateINT RECTIFIER CORP·Filed 2001·Granted May 13, 2003·19 cites·8 claims
- 3472US10090274B2Flip chip interconnection with reduced current densityEFFICIENT POWER CONVERSION CORP·Filed 2015·Granted Oct 2, 2018·2 cites·15 claims
- 3571US8969918B2Enhancement mode gallium nitride transistor with improved gate characteristicsLIDOW ALEXANDER·Filed 2010·Granted Mar 3, 2015·3 cites·1 claims
- 3670US10601300B2Integrated gallium nitride based DC-DC converterEFFICIENT POWER CONVERSION CORP·Filed 2018·Granted Mar 24, 2020·1 cites·20 claims
- 3769US7679111B2Termination structure for a power semiconductor deviceINT RECTIFIER CORP·Filed 2006·Granted Mar 16, 2010·6 cites·20 claims
- 3867US10622455B2Enhancement-mode GaN transistor with selective and nonselective etch layers for improved uniformity in GaN spacer thicknessEFFICIENT POWER CONVERSION CORP·Filed 2018·Granted Apr 14, 2020·1 cites·9 claims
- 3967US8785974B2Bumped, self-isolated GaN transistor chip with electrically isolated back surfaceLIDOW ALEXANDER·Filed 2010·Granted Jul 22, 2014·2 cites·11 claims
- 4065US11050339B2Integrated circuit with multiple gallium nitride transistor setsEFFICIENT POWER CONVERSION CORP·Filed 2020·Granted Jun 29, 2021·0 cites·8 claims
- 4165US9583480B2Integrated circuit with matching threshold voltages and method for making sameEFFICIENT POWER CONV CORP·Filed 2015·Granted Feb 28, 2017·1 cites·11 claims
- 4265US2025374643A1GaN HEMT WITH LOW THRESHOLD VOLTAGE SHIFT USING A HOLE INJECTOR/COLLECTOREFFICIENT POWER CONVERSION CORP·Filed 2025·Application pending·0 cites
- 4364US12463632B2Integrated circuit for gate overvoltage protection of power devicesEFFICIENT POWER CONVERSION CORP·Filed 2023·Granted Nov 4, 2025·0 cites·15 claims
- 4464US8536624B2Active area shaping for III-nitride devicesINT RECTIFIER CORP·Filed 2012·Granted Sep 17, 2013·1 cites·16 claims
- 4562US10600674B2Semiconductor devices with back surface isolationEFFICIENT POWER CONVERSION CORP·Filed 2019·Granted Mar 24, 2020·0 cites·13 claims
- 4661US9214399B2Integrated circuit with matching threshold voltages and method for making sameEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·1 cites·20 claims
- 4760US2024413205A1GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIEREFFICIENT POWER CONVERSION CORP·Filed 2024·Application pending·0 cites
- 4859US9331191B2GaN device with reduced output capacitance and process for making sameEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted May 3, 2016·1 cites·11 claims
- 4958US2024234521A1GaN DEVICE WITH UNIFORM ELECTRIC FIELDEFFICIENT POWER CONVERSION CORP·Filed 2024·Application pending·0 cites
- 5058US2024274681A1GaN DEVICE WITH HOLE ELIMINATION CENTERSEFFICIENT POWER CONVERSION CORP·Filed 2024·Application pending·0 cites
Showing the top 50 of 82 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →