Inventor · disambiguated record
Jianming Fu
Also filed as: FU JIANMING
97 granted patents·37 pending applications·4,466 citations·filing 1995–2020
99Inventor score
Top patents by PatentIndex Score
134 records- 0199US6306265B1High-density plasma for ionized metal deposition capable of exciting a plasma waveAPPLIED MATERIALS INC·Filed 2000·Granted Oct 23, 2001·138 cites·22 claims
- 0298US6413382B1Pulsed sputtering with a small rotating magnetronAPPLIED MATERIALS INC·Filed 2000·Granted Jul 2, 2002·171 cites·27 claims
- 0398US6277249B1Integrated process for copper via filling using a magnetron and target producing highly energetic ionsAPPLIED MATERIALS INC·Filed 2000·Granted Aug 21, 2001·273 cites·27 claims
- 0498US6274008B1Integrated process for copper via fillingAPPLIED MATERIALS INC·Filed 2000·Granted Aug 14, 2001·231 cites·19 claims
- 0598US6251242B1Magnetron and target producing an extended plasma region in a sputter reactorAPPLIED MATERIALS INC·Filed 2000·Granted Jun 26, 2001·287 cites·35 claims
- 0698US5897752AWafer bias ring in a sustained self-sputtering reactorAPPLIED MATERIALS INC·Filed 1997·Granted Apr 27, 1999·186 cites·10 claims
- 0797US9412884B2Module fabrication of solar cells with low resistivity electrodesSILEVO INC·Filed 2014·Granted Aug 9, 2016·41 cites·20 claims
- 0897US9343595B2Photovoltaic devices with electroplated metal gridsSOLARCITY CORP·Filed 2015·Granted May 17, 2016·26 cites·12 claims
- 0997US7253109B2Method of depositing a tantalum nitride/tantalum diffusion barrier layer systemAPPLIED MATERIALS INC·Filed 2005·Granted Aug 7, 2007·44 cites·67 claims
- 1097US6784096B2Methods and apparatus for forming barrier layers in high aspect ratio viasAPPLIED MATERIALS INC·Filed 2002·Granted Aug 31, 2004·137 cites·73 claims
- 1197US6451177B1Vault shaped target and magnetron operable in two sputtering modesAPPLIED MATERIALS INC·Filed 2000·Granted Sep 17, 2002·103 cites·26 claims
- 1297US6444104B2Sputtering target having an annular vaultAPPLIED MATERIALS INC·Filed 2001·Granted Sep 3, 2002·85 cites·46 claims
- 1397US6436251B2Vault-shaped target and magnetron having both distributed and localized magnetsAPPLIED MATERIALS INC·Filed 2001·Granted Aug 20, 2002·89 cites·13 claims
- 1497US6183614B1Rotating sputter magnetron assemblyAPPLIED MATERIALS INC·Filed 1999·Granted Feb 6, 2001·142 cites·32 claims
- 1596US6743340B2Sputtering of aligned magnetic materials and magnetic dipole ring used thereforAPPLIED MATERIALS INC·Filed 2002·Granted Jun 1, 2004·58 cites·36 claims
- 1696US6413383B1Method for igniting a plasma in a sputter reactorAPPLIED MATERIALS INC·Filed 2000·Granted Jul 2, 2002·92 cites·15 claims
- 1796US6358376B1Biased shield in a magnetron sputter reactorAPPLIED MATERIALS INC·Filed 2000·Granted Mar 19, 2002·81 cites·15 claims
- 1896US6221221B1Apparatus for providing RF return current path control in a semiconductor wafer processing systemAPPLIED MATERIALS INC·Filed 1998·Granted Apr 24, 2001·154 cites·20 claims
- 1995US8686283B2Solar cell with oxide tunneling junctionsHENG JIUNN BENJAMIN·Filed 2010·Granted Apr 1, 2014·32 cites·37 claims
- 2095US6582569B1Process for sputtering copper in a self ionized plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Jun 24, 2003·75 cites·21 claims
- 2194US6991709B2Multi-step magnetron sputtering processAPPLIED MATERIALS INC·Filed 2004·Granted Jan 31, 2006·46 cites·24 claims
- 2294US6787006B2Operating a magnetron sputter reactor in two modesAPPLIED MATERIALS INC·Filed 2002·Granted Sep 7, 2004·53 cites·31 claims
- 2394US6398929B1Plasma reactor and shields generating self-ionized plasma for sputteringAPPLIED MATERIALS INC·Filed 1999·Granted Jun 4, 2002·128 cites·22 claims
- 2494US6228236B1Sputter magnetron having two rotation diametersAPPLIED MATERIALS INC·Filed 1999·Granted May 8, 2001·113 cites·19 claims
- 2593US9219174B2Module fabrication of solar cells with low resistivity electrodesSILEVO INC·Filed 2014·Granted Dec 22, 2015·11 cites·14 claims
- 2693US7504006B2Self-ionized and capacitively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2003·Granted Mar 17, 2009·49 cites·45 claims
- 2793US6627050B2Method and apparatus for depositing a tantalum-containing layer on a substrateAPPLIED MATERIALS INC·Filed 2001·Granted Sep 30, 2003·67 cites·54 claims
- 2893US6406599B1Magnetron with a rotating center magnet for a vault shaped sputtering targetAPPLIED MATERIALS INC·Filed 2000·Granted Jun 18, 2002·45 cites·24 claims
- 2993US5736021AElectrically floating shield in a plasma reactorAPPLIED MATERIALS INC·Filed 1996·Granted Apr 7, 1998·91 cites·20 claims
- 3092US8668816B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2007·Granted Mar 11, 2014·19 cites·16 claims
- 3192US6974771B2Methods and apparatus for forming barrier layers in high aspect ratio viasAPPLIED MATERIALS INC·Filed 2004·Granted Dec 13, 2005·46 cites·15 claims
- 3292US6893541B2Multi-step process for depositing copper seed layer in a viaAPPLIED MATERIALS INC·Filed 2002·Granted May 17, 2005·51 cites·9 claims
- 3392US6485618B2Integrated copper fill processAPPLIED MATERIALS INC·Filed 2001·Granted Nov 26, 2002·47 cites·26 claims
- 3492US5985759AOxygen enhancement of ion metal plasma (IMP) sputter deposited barrier layersAPPLIED MATERIALS INC·Filed 1998·Granted Nov 16, 1999·120 cites·14 claims
- 3591US6911124B2Method of depositing a TaN seed layerAPPLIED MATERIALS INC·Filed 2002·Granted Jun 28, 2005·52 cites·26 claims
- 3691US6692617B1Sustained self-sputtering reactor having an increased density plasmaAPPLIED MATERIALS INC·Filed 1997·Granted Feb 17, 2004·79 cites·25 claims
- 3791US6271592B1Sputter deposited barrier layersAPPLIED MATERIALS INC·Filed 1999·Granted Aug 7, 2001·104 cites·14 claims
- 3889US6730196B2Auxiliary electromagnets in a magnetron sputter reactorAPPLIED MATERIALS INC·Filed 2002·Granted May 4, 2004·56 cites·20 claims
- 3989US6290825B1High-density plasma source for ionized metal depositionAPPLIED MATERIALS INC·Filed 1999·Granted Sep 18, 2001·53 cites·9 claims
- 4088US9062372B2Self-ionized and capacitively-coupled plasma for sputtering and resputteringGOPALRAJA PRABURAM·Filed 2007·Granted Jun 23, 2015·13 cites·10 claims
- 4188US6790323B2Self ionized sputtering using a high density plasma sourceAPPLIED MATERIALS INC·Filed 2001·Granted Sep 14, 2004·22 cites·36 claims
- 4288US6485617B2Sputtering method utilizing an extended plasma regionAPPLIED MATERIALS INC·Filed 2001·Granted Nov 26, 2002·37 cites·11 claims
- 4388US6238528B1Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma sourceAPPLIED MATERIALS INC·Filed 1998·Granted May 29, 2001·55 cites·30 claims
- 4487US9214576B2Transparent conducting oxide for photovoltaic devicesFU JIANMING·Filed 2011·Granted Dec 15, 2015·4 cites·18 claims
- 4586US10047430B2Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2014·Granted Aug 14, 2018·5 cites·22 claims
- 4686US6059945ASputter target for eliminating redeposition on the target sidewallAPPLIED MATERIALS INC·Filed 1998·Granted May 9, 2000·57 cites·17 claims
- 4785US9773928B2Solar cell with electroplated metal gridFU JIANMING·Filed 2011·Granted Sep 26, 2017·5 cites·13 claims
- 4884US8283559B2Silicon-based dielectric stack passivation of Si-epitaxial thin-film solar cellsYU CHENTAO·Filed 2009·Granted Oct 9, 2012·8 cites·10 claims
- 4984US7294574B2Sputter deposition and etching of metallization seed layer for overhang and sidewall improvementAPPLIED MATERIALS INC·Filed 2004·Granted Nov 13, 2007·36 cites·40 claims
- 5084US6709553B2Multiple-step sputter depositionAPPLIED MATERIALS INC·Filed 2002·Granted Mar 23, 2004·24 cites·51 claims
Showing the top 50 of 134 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →