Inventor · disambiguated record
Jinsheng Gao
Also filed as: GAO JINSHENG
17 granted patents·2 pending applications·55 citations·filing 2006–2019
91Inventor score
Top patents by PatentIndex Score
19 records- 0195US10325819B1Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 18, 2019·15 cites·20 claims
- 0293US10269654B1Methods, apparatus and system for replacement contact for a finFET deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 23, 2019·12 cites·20 claims
- 0391US10483369B2Methods of forming replacement gate structures on transistor devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 19, 2019·7 cites·11 claims
- 0486US10644156B2Methods, apparatus, and system for reducing gate cut gouging and/or gate height loss in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2018·Granted May 5, 2020·5 cites·12 claims
- 0584US9935012B1Methods for forming different shapes in different regions of the same layerGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 3, 2018·4 cites·20 claims
- 0682US10340142B1Methods, apparatus and system for self-aligned metal hard masksGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 2, 2019·3 cites·17 claims
- 0780US10418455B2Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 17, 2019·2 cites·9 claims
- 0878US9991363B1Contact etch stop layer with sacrificial polysilicon layerGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 5, 2018·2 cites·19 claims
- 0977US10204797B1Methods, apparatus, and system for reducing step height difference in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 12, 2019·2 cites·20 claims
- 1077US10204784B1Methods of forming features on integrated circuit productsGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 12, 2019·2 cites·16 claims
- 1171US10559470B2Capping structureGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 11, 2020·1 cites·18 claims
- 1260US10930549B2Cap structureGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 23, 2021·0 cites·15 claims
- 1359US10522639B2Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET deviceGLOBALFOUNDRIES INC·Filed 2019·Granted Dec 31, 2019·0 cites·12 claims
- 1458US11349013B2IC product comprising a novel insulating gate separation structure for transistor devicesGLOBALFOUNDRIES US INC·Filed 2019·Granted May 31, 2022·0 cites·20 claims
- 1556US10460986B2Cap structureGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 29, 2019·0 cites·20 claims
- 1647US2007156510A1Methods and systems for determining reliability of product demand forecastsKIM EDWARD·Filed 2006·Application pending·0 cites
- 1744US10388562B2Composite contact etch stop layerGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 20, 2019·0 cites·18 claims
- 1843US10256089B2Replacement contact cuts with an encapsulated low-K dielectricGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 9, 2019·0 cites·19 claims
- 1941US2019326416A1Material combinations for polish stops and gate capsGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →