Inventor · disambiguated record
Jianqiu Guo
Also filed as: GUO JIANQIU
5 granted patents·6 pending applications·0 citations·filing 2020–2024
59Inventor score
Files withAPPLIED MATERIALS INC11
Top patents by PatentIndex Score
11 records- 0169US12463093B2Method of tuning film properties of metal nitride using plasmaAPPLIED MATERIALS INC·Filed 2023·Granted Nov 4, 2025·0 cites·7 claims
- 0257US11646226B2Method of tuning film properties of metal nitride using plasmaAPPLIED MATERIALS INC·Filed 2020·Granted May 9, 2023·0 cites·15 claims
- 0357US2024282631A1Integration solution for nand deep contact gap fillAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0456US12410513B2Seamless gapfill of metal nitridesAPPLIED MATERIALS INC·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 0555US12100595B2Amorphous silicon-based scavenging and sealing EOTAPPLIED MATERIALS INC·Filed 2021·Granted Sep 24, 2024·0 cites·19 claims
- 0653US2025112091A1Surface treatment enabling super-conformal metal cap profile on middle of-line (mol) silicidesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0752US10991586B2In-situ tungsten deposition without barrier layerAPPLIED MATERIALS INC·Filed 2020·Granted Apr 27, 2021·0 cites·20 claims
- 0851US2025054767A1Selective metal capping processes for a junction silicideAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0951US2024379363A1Methods for forming low resistivity contactsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1050US2025054812A1Selective bottom-up metal fill/cap on junction silicide by selective metal removalAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1150US2025079239A1Selective capping for gate-all-around field effect transistorsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →