Inventor · disambiguated record

Jinseong Heo

Also filed as: HEO JINSEONG

86 granted patents·33 pending applications·102 citations·filing 2014–2025

98Inventor score

Technology areasH10D H10P H01L G11C H10B

Files withSAMSUNG ELECTRONICS CO LTD119

Top patents by PatentIndex Score

119 records

0196US11145731B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 12, 2021·6 cites·25 claims
0296US9595580B2Two-dimensional (2D) material element with in-plane metal chalcogenide-based heterojunctions and devices including said elementSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 14, 2017·11 cites·44 claims
0395US11973142B2Integrated circuit including transistors and a method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 30, 2024·2 cites·20 claims
0495US11711923B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 25, 2023·2 cites·19 claims
0595US11527646B2Domain switching devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 13, 2022·4 cites·26 claims
0694US11177283B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 16, 2021·3 cites·18 claims
0793US10714500B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 14, 2020·10 cites·22 claims
0893US10553684B2Optical sensor and image sensor including graphene quantum dotsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 4, 2020·5 cites·30 claims
0992US11862705B2Electronic devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 2, 2024·2 cites·21 claims
1092US9735233B2Electronic device including side gate and two-dimensional material channel and method of manufacturing the electronic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 15, 2017·7 cites·29 claims
1190US11996150B2Non-volatile content addressable memory device having simple cell configuration and operating method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 28, 2024·2 cites·28 claims
1289US12119060B2Content-addressable memory and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 15, 2024·2 cites·20 claims
1389US11677025B2Electronic device including ferroelectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 13, 2023·1 cites·19 claims
1489US9806218B2Photodetector using bandgap-engineered 2D materials and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 31, 2017·5 cites·19 claims
1589US9691853B2Electronic device including graphene and quantum dotsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 27, 2017·5 cites·25 claims
1687US11349026B2Electronic device including ferroelectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 31, 2022·3 cites·19 claims
1787US10186545B2Image sensor including visible and near-infrared light detectors and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 22, 2019·5 cites·17 claims
1886US11417763B2Integrated circuit including transistors and a method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 16, 2022·3 cites·17 claims
1984US12369361B2Integrated circuit including transistors and a method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
2084US10937885B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 2, 2021·2 cites·25 claims
2182US11527635B2Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structuresSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 13, 2022·1 cites·19 claims
2282US11522082B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 6, 2022·1 cites·17 claims
2382US10079313B2Graphene electronic device having channel layer including graphene islands and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 18, 2018·4 cites·15 claims
2481US12094971B2Electronic device including ferroelectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
2581US12089416B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
2680US12224346B2Domain switching devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·13 claims
2780US11908918B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·8 claims
2879US12457792B2Thin film structure and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·14 claims
2979US12230711B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·16 claims
3079US12034049B2Superlattice structure including two-dimensional material and device including the superlattice structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 9, 2024·0 cites·20 claims
3179US10096735B2Photodetector using bandgap-engineered 2D materials and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 9, 2018·2 cites·16 claims
3278US12206009B2Electronic devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·19 claims
3378US11984514B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
3477US12191311B2Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuitSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
3577US11824119B2Domain switching devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 21, 2023·0 cites·20 claims
3677US10217513B2Phase change memory devices including two-dimensional material and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 26, 2019·4 cites·41 claims
3776US12107140B2Thin film structure and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
3876US11824118B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 21, 2023·0 cites·20 claims
3976US2025331242A1Thin film structure and semiconductor device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
4076US2024266445A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
4176US2024265967A1Non-volatile content addressable memory device having simple cell configuration and operating method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
4275US11701728B2Logic switching device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 18, 2023·0 cites·24 claims
4375US10680066B2Graphene device, methods of manufacturing and operating the same, and electronic apparatus including the graphene deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 9, 2020·2 cites·28 claims
4474US12100749B2Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structuresSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 24, 2024·0 cites·20 claims
4574US11699765B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 11, 2023·0 cites·25 claims
4674US11600712B2Ferroelectric structure including a ferroelectric film having a net polarization oriented to a polarization enhancement film and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 7, 2023·1 cites·15 claims
4774US10702940B2Logic switching device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 7, 2020·1 cites·24 claims
4874US2025176259A1Complementary metal oxide semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
4974US2025015184A1Ferroelectric semiconductor device and method of extracting defect density of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
5074US2025142936A1Layer structure including dielectric layer, methods of manufacturing the layer structure, and electronic device including the layer structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →