Inventor · disambiguated record
Jin Yul Lee
Also filed as: LEE JIN YUL
31 granted patents·8 pending applications·191 citations·filing 2005–2024
96Inventor score
Top patents by PatentIndex Score
39 records- 0197US9508847B2Semiconductor device having dual work function gate structure, method for fabricating the same, transistor circuit having the same, memory cell having the same, and electronic device having the sameSK HYNIX INC·Filed 2015·Granted Nov 29, 2016·18 cites·15 claims
- 0296US9786598B2Semiconductor device with air gaps and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Oct 10, 2017·31 cites·17 claims
- 0396US9634109B2Semiconductor device having dual work function gate structure, method for fabricating the same, transistor circuit having the same, memory cell having the same, and electronic device having the sameSK HYNIX INC·Filed 2016·Granted Apr 25, 2017·12 cites·11 claims
- 0495US8999837B2Semiconductor device with air gapSK HYNIX INC·Filed 2013·Granted Apr 7, 2015·21 cites·20 claims
- 0594US8866208B2Semiconductor devices including vertical transistors and methods of fabricating the sameSK HYNIX INC·Filed 2012·Granted Oct 21, 2014·19 cites·15 claims
- 0693US10395973B2Isolation structure and method for manufacturing the sameSK HYNIX INC·Filed 2019·Granted Aug 27, 2019·5 cites·7 claims
- 0793US9865496B2Method for manufacturing isolation structureSK HYNIX INC·Filed 2016·Granted Jan 9, 2018·7 cites·20 claims
- 0892US9245849B2Semiconductor device with air gapSK HYNIX INC·Filed 2015·Granted Jan 26, 2016·9 cites·20 claims
- 0990US9818843B2Transistor having dual work function buried gate electrode and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Nov 14, 2017·6 cites·7 claims
- 1089US9530849B2Transistor having dual work function buried gate electrode and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Dec 27, 2016·9 cites·11 claims
- 1187US8227859B2Semiconductor device and method for fabricating the sameLEE JIN-YUL·Filed 2009·Granted Jul 24, 2012·12 cites·11 claims
- 1286US8455945B2Semiconductor device having saddle fin transistor and method for fabricating the sameLEE JIN YUL·Filed 2009·Granted Jun 4, 2013·11 cites·6 claims
- 1382US10256136B2Method of manufacturing isolation structure for semiconductor deviceSK HYNIX INC·Filed 2017·Granted Apr 9, 2019·2 cites·19 claims
- 1482US9214348B2Semiconductor device including a gate dielectric layerSK HYNIX INC·Filed 2013·Granted Dec 15, 2015·6 cites·14 claims
- 1581US7838405B2Method for manufacturing semiconductor device having bulb-type recessed channelHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 23, 2010·7 cites·8 claims
- 1678US8518779B2Semiconductor device and method for fabricating the sameLEE JIN-YUL·Filed 2012·Granted Aug 27, 2013·4 cites·36 claims
- 1774US2024413088A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 1873US7927945B2Method for manufacturing semiconductor device having 4F2 transistorHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Apr 19, 2011·4 cites·13 claims
- 1970US7799641B2Method for forming a semiconductor device having recess channelHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Sep 21, 2010·4 cites·13 claims
- 2068US7808057B2PMOS transistor with increased effective channel length in the peripheral region and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Oct 5, 2010·3 cites·1 claims
- 2163US8815689B2Method for fabricating a semiconductor device having a saddle fin transistorHYNIX SEMICONDUCTOR INC·Filed 2013·Granted Aug 26, 2014·1 cites·17 claims
- 2262US2022359400A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2021·Application pending·0 cites
- 2359US2025046707A1Semiconductor device including tapered dielectric layer and method of forming the sameSK HYNIX INC·Filed 2023·Application pending·0 cites
- 2456US7781829B2Semiconductor device having recessed channel and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Aug 24, 2010·0 cites·3 claims
- 2554US8975132B2Semiconductor device with isolation layer, electronic device having the same, and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Mar 10, 2015·0 cites·8 claims
- 2649US8786047B2Semiconductor device with isolation layer, electronic device having the same, and method for fabricating the sameKIM HYUNG-HWAN·Filed 2012·Granted Jul 22, 2014·0 cites·17 claims
- 2749US8232166B2Method for fabricating semiconductor device with recess gateLEE SEUNG-MI·Filed 2009·Granted Jul 31, 2012·0 cites·15 claims
- 2849US2010167211A1Method for forming fine patterns in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2009·Application pending·0 cites
- 2948US8247878B2Semiconductor device and method of manufacturing the sameLEE JIN YUL·Filed 2011·Granted Aug 21, 2012·0 cites·5 claims
- 3048US8241994B2Method for fabricating isolation layer in semiconductor deviceLEE JIN YUL·Filed 2009·Granted Aug 14, 2012·0 cites·7 claims
- 3147US8097509B2Method for manufacturing semiconductor device with a recessed channelLEE JIN YUL·Filed 2010·Granted Jan 17, 2012·0 cites·5 claims
- 3247US7960268B2Method for forming gate having metal layer in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jun 14, 2011·0 cites·9 claims
- 3347US2010159683A1Method for Fabricating Semiconductor Device Having Recess ChannelHYNIX SEMICONDUCTOR INC·Filed 2009·Application pending·0 cites
- 3446US7824979B2Semiconductor device with channel of FIN structure and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Nov 2, 2010·0 cites·27 claims
- 3545US8900947B2Semiconductor devices including conductive plugs and methods of manufacturing the sameLEE JIN YUL·Filed 2012·Granted Dec 2, 2014·0 cites·20 claims
- 3645US7468301B2PMOS transistor with increased effective channel length in the peripheral region and a multi-height substrateHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Dec 23, 2008·0 cites·14 claims
- 3742US2012261748A1Semiconductor device with recess gate and method for fabricating the sameLEE SEUNG-MI·Filed 2012·Application pending·0 cites
- 3842US2007004127A1Method of fabricating a transistor having the round corner recess channel structureLEE JIN YUL·Filed 2005·Application pending·0 cites
- 3938US2011159677A1Method of fabricating landing plug contact in semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →