Inventor · disambiguated record
Jian-Hsing Lee
Also filed as: LEE JIAN-HSING
149 granted patents·27 pending applications·2,860 citations·filing 1995–2024
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG141VANGUARD INT SEMICONDUCT CORP21TAIWAN SEMICONDUCTOR MFG CO LTD3KAO TZU-CHENG2RICHTEK TECHNOLOGY CORP2
Top patents by PatentIndex Score
176 records- 0196US6028324ATest structures for monitoring gate oxide defect densities and the plasma antenna effectTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 22, 2000·191 cites·27 claims
- 0295US7910999B2Method for four direction low capacitance ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Mar 22, 2011·94 cites·14 claims
- 0393US6614693B1Combination erase waveform to reduce oxide trapping centers generation rate of flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 2, 2003·77 cites·72 claims
- 0492US8344416B2Integrated circuits using guard rings for ESD, systems, and methods for forming the integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 1, 2013·14 cites·19 claims
- 0590US11810872B2Semiconductor device structure comprising source and drain protective circuits against electrostatic discharge (ESD)VANGUARD INT SEMICONDUCT CORP·Filed 2022·Granted Nov 7, 2023·1 cites·9 claims
- 0690US6645820B1Polycrystalline silicon diode string for ESD protection of different power supply connectionsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 11, 2003·50 cites·9 claims
- 0790US6610262B1Depletion mode SCR for low capacitance ESD input protectionTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 26, 2003·46 cites·21 claims
- 0890US6122201AClipped sine wave channel erase method to reduce oxide trapping charge generation rate of flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 19, 2000·79 cites·39 claims
- 0990US5828605ASnapback reduces the electron and hole trapping in the tunneling oxide of flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 27, 1998·95 cites·12 claims
- 1088US7485930B2Method for four direction low capacitance ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 3, 2009·16 cites·12 claims
- 1188US6937457B2Decoupling capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 30, 2005·37 cites·23 claims
- 1288US6323074B1High voltage ESD protection device with very low snapback voltage by adding as a p+ diffusion and n-well to the NMOS drainTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 27, 2001·44 cites·5 claims
- 1388US6097066AElectro-static discharge protection structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Aug 1, 2000·77 cites·9 claims
- 1487US6492208B1Embedded SCR protection device for output and input padTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Dec 10, 2002·38 cites·11 claims
- 1587US6444511B1CMOS output circuit with enhanced ESD protection using drain side implantationTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 3, 2002·43 cites·12 claims
- 1687US6214670B1Method for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performanceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 10, 2001·68 cites·14 claims
- 1787US6066879ACombined NMOS and SCR ESD protection deviceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 23, 2000·75 cites·14 claims
- 1887US5872379ALow voltage turn-on SCR for ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 16, 1999·73 cites·14 claims
- 1986US7420250B2Electrostatic discharge protection device having light doped regionsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 2, 2008·14 cites·19 claims
- 2085US7372083B2Embedded silicon-controlled rectifier (SCR) for HVPMOS ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 13, 2008·13 cites·16 claims
- 2185US7081662B1ESD protection device for high voltageTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 25, 2006·11 cites·20 claims
- 2285US6576934B2Embedded SCR protection device for output and input padTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 10, 2003·34 cites·11 claims
- 2385US6249414B1Displacement current trigger SCRTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 19, 2001·32 cites·9 claims
- 2484US7663851B2Tie-off circuit with ESD protection featuresTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 16, 2010·11 cites·17 claims
- 2584US6049486ATriple mode erase scheme for improving flash EEPROM cell threshold voltage (VT) cycling closure effectTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 11, 2000·57 cites·59 claims
- 2683US7179691B1Method for four direction low capacitance ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Feb 20, 2007·30 cites·5 claims
- 2783US6268992B1Displacement current trigger SCRTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 31, 2001·48 cites·19 claims
- 2883US6055183AErase method of flash EEPROM by using snapback characteristicTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Apr 25, 2000·54 cites·16 claims
- 2982US6960811B2Low capacitance ESD protection device, and integrated circuit including the sameTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Nov 1, 2005·28 cites·25 claims
- 3082US5862078AMixed mode erase method to improve flash eeprom write/erase threshold closureTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 19, 1999·56 cites·22 claims
- 3181US10643987B2Semiconductor structuresVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted May 5, 2020·3 cites·32 claims
- 3281US7563653B2ESD protection for high voltage applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jul 21, 2009·9 cites·5 claims
- 3381US7148574B2Bonding pad structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Dec 12, 2006·30 cites·13 claims
- 3480US6448123B1Low capacitance ESD protection deviceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 10, 2002·27 cites·5 claims
- 3580US6420221B1Method of manufacturing a highly latchup-immune CMOS I/O structureTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 16, 2002·24 cites·6 claims
- 3679US9748361B2Integrated circuits using guard rings for ESD systems, and methods for forming the integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 29, 2017·3 cites·20 claims
- 3779US7994577B2ESD protection structures on SOI substratesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 9, 2011·6 cites·10 claims
- 3879US6459127B1Uniform current distribution SCR device for high voltage ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 1, 2002·26 cites·5 claims
- 3979US6323523B1N-type structure for n-type pull-up and down I/O protection circuitTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 27, 2001·25 cites·12 claims
- 4079US6049484AErase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate eraseTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Apr 11, 2000·43 cites·20 claims
- 4179US5726933AClipped sine shaped waveform to reduce the cycling-induced electron trapping in the tunneling oxide of flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Mar 10, 1998·43 cites·10 claims
- 4278US11476207B2Semiconductor device structure comprising source and drain protective circuits against electrostatic discharge (ESD)VANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Oct 18, 2022·2 cites·8 claims
- 4378US8772092B2Integrated circuits using guard rings for ESD, systems, and methods for forming the integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 8, 2014·3 cites·20 claims
- 4478US6552372B2Integrated circuit having improved ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 22, 2003·26 cites·12 claims
- 4578US5565790AESD protection circuit with field transistor clamp and resistor in the gate circuit of a clamp triggering FETTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Oct 15, 1996·44 cites·10 claims
- 4677US7508639B2Input/output devices with robustness of ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 24, 2009·6 cites·19 claims
- 4777US7247543B2Decoupling capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 24, 2007·6 cites·2 claims
- 4877US6614078B2Highly latchup-immune CMOS I/O structuresTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 2, 2003·21 cites·11 claims
- 4977US6362035B1Channel stop ion implantation method for CMOS integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 26, 2002·26 cites·20 claims
- 5076US6400542B1ESD protection circuit for different power suppliesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 4, 2002·18 cites·3 claims
Showing the top 50 of 176 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Jian-Hsing Lee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →