Inventor · disambiguated record
Jingyu Lian
Also filed as: LIAN JINGYU · LIAN JINGYU JENNY
28 granted patents·12 pending applications·113 citations·filing 1999–2024
95Inventor score
Top patents by PatentIndex Score
40 records- 0187US7586158B2Piezoelectric stress liner for bulk and SOIINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 8, 2009·21 cites·36 claims
- 0277US7800182B2Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the sameINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 21, 2010·6 cites·17 claims
- 0375US6432725B1Methods for crystallizing metallic oxide dielectric films at low temperatureINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 13, 2002·17 cites·27 claims
- 0471US8349528B2Semiconductor devices and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2011·Granted Jan 8, 2013·2 cites·18 claims
- 0570US7745292B2Method for fabricating a semiconductor gate structureINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jun 29, 2010·3 cites·28 claims
- 0669US7674350B2Feature dimension control in a manufacturing processINFINEON TECHNOLOGIES AG·Filed 2007·Granted Mar 9, 2010·2 cites·18 claims
- 0768US6596580B2Recess Pt structure for high k stacked capacitor in DRAM and FRAM, and the method to form this structureINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 22, 2003·12 cites·7 claims
- 0866US8697339B2Semiconductor device manufacturing methodsZHUANG HAOREN·Filed 2011·Granted Apr 15, 2014·2 cites·22 claims
- 0966US6794705B2Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materialsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 21, 2004·10 cites·21 claims
- 1064US7794903B2Metrology systems and methods for lithography processesINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 14, 2010·1 cites·15 claims
- 1161US2025300033A1Sensor for thermal dissipation measurementIBM·Filed 2024·Application pending·0 cites
- 1259US8138055B2Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the sameHAN JIN-PING·Filed 2010·Granted Mar 20, 2012·1 cites·23 claims
- 1358US7378700B2Self-aligned V0-contact for cell size reductionINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 27, 2008·1 cites·10 claims
- 1455US9070759B2Semiconductor device and method of making sameHAN JIN-PING·Filed 2006·Granted Jun 30, 2015·1 cites·16 claims
- 1554US6379577B2Hydrogen peroxide and acid etchant for a wet etch processIBM·Filed 1999·Granted Apr 30, 2002·18 cites·12 claims
- 1653US7319270B2Multi-layer electrode and method of forming the sameINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jan 15, 2008·4 cites·26 claims
- 1753US2022156617A1Multi-dimensional aircraft collision conflict risk evaluation systemUNIV CIVIL AVIATION FLIGHT CHINA·Filed 2022·Application pending·0 cites
- 1852US8394574B2Metrology systems and methods for lithography processesSARMA CHANDRASEKHAR·Filed 2011·Granted Mar 12, 2013·0 cites·24 claims
- 1952US7042705B2Sidewall structure and method of fabrication for reducing oxygen diffusion to contact plugs during CW hole reactive ion etch processingTOSHIBA KK·Filed 2003·Granted May 9, 2006·3 cites·12 claims
- 2051US8007985B2Semiconductor devices and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2006·Granted Aug 30, 2011·0 cites·18 claims
- 2150US7842579B2Method for manufacturing a semiconductor device having doped and undoped polysilicon layersINFINEON TECHNOLOGIES AG·Filed 2007·Granted Nov 30, 2010·0 cites·21 claims
- 2249US11847398B2Automatic generation of ground rule verification macrosIBM·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 2349US8067135B2Metrology systems and methods for lithography processesSARMA CHANDRASEKHAR·Filed 2010·Granted Nov 29, 2011·0 cites·7 claims
- 2449US6897501B2Avoiding shorting in capacitorsINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 24, 2005·4 cites·22 claims
- 2549US2008108203A1Multi-Layer Electrode and Method of Forming the SameLIAN JINGYU·Filed 2008·Application pending·0 cites
- 2647US2008286698A1Semiconductor device manufacturing methodsZHUANG HAOREN·Filed 2007·Application pending·0 cites
- 2746US7270884B2Adhesion layer for Pt on SiO2IBM·Filed 2003·Granted Sep 18, 2007·2 cites·24 claims
- 2846US2010120177A1Feature Dimension Control in a Manufacturing ProcessINFINEON TECHNOLOGIES AG·Filed 2010·Application pending·0 cites
- 2944US7061035B2Self-aligned V0-contact for cell size reductionINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 13, 2006·1 cites·1 claims
- 3044US6839220B1Multi-layer barrier allowing recovery anneal for ferroelectric capacitorsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 4, 2005·2 cites·16 claims
- 3143US8063406B2Semiconductor device having a polysilicon layer with a non-constant doping profileZHUANG HAOREN·Filed 2010·Granted Nov 22, 2011·0 cites·13 claims
- 3239US2007239305A1Process control systems and methodsZHUANG HAOREN·Filed 2006·Application pending·0 cites
- 3338US6984555B2Device and method for inhibiting oxidation of contact plugs in ferroelectric capacitor devicesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 10, 2006·0 cites·21 claims
- 3438US2004121566A1Method to produce low leakage high K materials in thin film formINFINEON TECHNOLOGIES CORP·Filed 2002·Application pending·0 cites
- 3538US2004197984A1Adhesion layer for Pt on SiO2INFINEON TECHNOLOGIES CORP·Filed 2004·Application pending·0 cites
- 3637US2004171274A1Method for formation of hardmask elements during a semiconductor device fabrication processFiled 2003·Application pending·0 cites
- 3735US7001780B2Method of fabrication of an FeRAM capacitor and an FeRAM capacitor formed by the methodTOSHIBA KK·Filed 2003·Granted Feb 21, 2006·0 cites·6 claims
- 3835US2007190795A1Method for fabricating a semiconductor device with a high-K dielectricZHUANG HAOREN·Filed 2006·Application pending·0 cites
- 3935US2005196917A1Method for forming a (111) oriented BSTO thin film layer for high dielectric constant capacitorsFiled 2004·Application pending·0 cites
- 4034US2004201049A1Suppression of electrode re-crystallisation in a ferrocapacitorFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →