Semiconductor device manufacturing methods

Abstract

Methods for manufacturing semiconductor devices are disclosed. One preferred embodiment is a method of processing a semiconductor device. The method includes providing a workpiece having a material layer to be patterned disposed thereon. A masking material is formed over the material layer of the workpiece. The masking material includes a lower portion and an upper portion disposed over the lower portion. The upper portion of the masking material is patterned with a first pattern. An additional substance is introduced and the lower portion of the masking material is patterned. The masking material and the additional substance are used to pattern the material layer of the workpiece.

1 . A method of processing a semiconductor device, the method comprising:
 providing a workpiece, the workpiece comprising a material layer to be patterned disposed thereon;   forming a masking material over the material layer of the workpiece, the masking material comprising a lower portion and an upper portion disposed over the lower portion;   patterning the upper portion of the masking material with a first pattern;   introducing an additional substance and patterning the lower portion of the masking material; and   using the masking material and the additional substance to pattern the material layer of the workpiece.   
     
     
         2 . The method according to  claim 1 , wherein using the masking material and the additional substance to pattern the material layer of the workpiece comprises forming a second pattern in the material layer, the second pattern comprising an enlargement of the first pattern in the upper portion of the masking material. 
     
     
         3 . The method according to  claim 1 , wherein introducing the additional substance and patterning the lower portion of the masking material comprises patterning the lower portion of the masking material with the first pattern and forming the additional substance on sidewalls of the lower portion of the masking material. 
     
     
         4 . The method according to  claim 1 , wherein introducing the additional substance comprises lining the lower portion of the masking material with a redeposition component of a patterning process used to pattern the lower portion of the masking material. 
     
     
         5 . The method according to  claim 1 , wherein introducing the additional substance comprises forming a polymer material over the patterned upper portion of the masking material and over a top surface of the lower portion of the masking material, before patterning the lower portion of the masking material. 
     
     
         6 . The method according to  claim 1 , wherein forming the masking material over the material layer of the workpiece comprises forming a lower portion comprising an anti-reflective coating and forming an upper portion comprising a photosensitive material. 
     
     
         7 . A method of manufacturing a semiconductor device, the method comprising:
 providing a workpiece;   forming a material layer to be patterned over the workpiece;   disposing an anti-reflective coating over the material layer;   disposing a layer of photosensitive material over the anti-reflective coating;   patterning the layer of photosensitive material with a first pattern;   introducing an additional substance and patterning the anti-reflective coating; and   using the layer of photosensitive material, the additional substance, and the anti-reflective coating to pattern the material layer with a second pattern, wherein the second pattern is larger than the first pattern.   
     
     
         8 . The method according to  claim 7 , wherein introducing the additional substance comprises introducing a by-product during the patterning of the anti-reflective coating, or wherein introducing the additional substance comprises depositing a polymer material over the patterned layer of photosensitive material, after patterning the layer of photosensitive material with the first pattern. 
     
     
         9 . The method according to  claim 7 , wherein the first pattern comprises a plurality of first features, the plurality of first features comprising a first distance from an end of one first feature to an end of an adjacent first feature, and wherein the second pattern comprises a plurality of second features, the plurality of second features comprising a second distance from an end of one second feature to an end of an adjacent second feature, the second distance being less than the first distance. 
     
     
         10 . The method according to  claim 9 , wherein the plurality of second features comprises a plurality of transistor gates. 
     
     
         11 . A semiconductor device manufactured in accordance with the method of  claim 7 . 
     
     
         12 . The method according to  claim 7 , wherein patterning the layer of photosensitive material with the first pattern comprises using a single lithography mask or using a plurality of lithography masks. 
     
     
         13 . The method according to  claim 7 , further comprising disposing an organic dielectric layer (ODL) over the material layer before disposing the anti-reflective coating over the material layer, wherein patterning the anti-reflective coating further comprises patterning the ODL, and wherein patterning the material layer with the second pattern further comprises using the ODL. 
     
     
         14 . A method of patterning a material layer of a semiconductor device, the method comprising:
 providing a workpiece, the workpiece comprising a material layer to be patterned disposed thereon;   forming an anti-reflective coating over the material layer;   forming a layer of photosensitive material over the anti-reflective coating;   exposing the layer of photosensitive material using a lithography mask;   developing the layer of photosensitive material;   etching away portions of the layer of photosensitive material to form a first pattern in the layer of photosensitive material;   etching the anti-reflective coating using the layer of photosensitive material as a mask using an etch process, wherein the etch process includes a redeposition component that forms on sidewalls of the anti-reflective coating during the etch process, forming a second pattern in the anti-reflective coating and redeposition component, the second pattern being larger than the first pattern; and   patterning the material layer of the workpiece with the second pattern using the layer of photosensitive material, the redeposition component, and the anti-reflective coating as a mask.   
     
     
         15 . The method according to  claim 14 , wherein the etch process comprises a carbon fluorine-oxygen gas chemistry, CF 4 /O 2 , or CF 4 /CH 2 F 2 /O 2 . 
     
     
         16 . The method according to  claim 14 , wherein the redeposition component reduces line shortening of features formed in the material layer of the workpiece. 
     
     
         17 . The method according to  claim 14 , wherein the first pattern comprises a plurality of first features comprising a first width and a first length, wherein the second pattern comprises a plurality of second features comprising a second width and a second length, wherein the second length is greater than the first length, and wherein the second width is greater than the first width. 
     
     
         18 . The method according to  claim 17 , wherein the second length is greater than the first length by a first amount, and wherein the second width is greater than the first width by a second amount, the first amount being greater than the second amount. 
     
     
         19 . A method of patterning a material layer of a semiconductor device, the method comprising:
 providing a workpiece, the workpiece comprising a material layer to be patterned disposed thereon;   forming an anti-reflective coating over the material layer of the workpiece;   forming a layer of photosensitive material over the anti-reflective coating;   patterning the layer of photosensitive material using a lithography mask, exposing portions of the anti-reflective coating;   depositing a thin layer of material over the layer of photosensitive material and the exposed portions of the anti-reflective coating;   etching the anti-reflective coating using the thin layer of material and the layer of photosensitive material as a mask, wherein the thin layer of material remains on sidewalls of the layer of photosensitive material; and   patterning the material layer using at least the thin layer of material, the layer of photosensitive material, and the anti-reflective coating as a mask, wherein the thin layer of material enlarges a pattern transferred to the material layer from the lithography mask.   
     
     
         20 . The method according to  claim 19 , wherein etching the anti-reflective coating using the thin layer of material and the layer of photosensitive material as a mask comprises using an etch process, wherein the etch process includes a redeposition component that forms on sidewalls of the anti-reflective coating during the etch process, wherein patterning the material layer further comprises using the redeposition component as the mask, and wherein the redeposition component further enlarges the pattern transferred to the material layer from the lithography mask. 
     
     
         21 . The method according to  claim 19 , wherein the thin layer of material comprises a polymer comprising a thickness of about 20 nm or less. 
     
     
         22 . The method according to  claim 19 , wherein the material layer comprises a conductive material, a semiconductive material, an insulator, a hard mask, or combinations thereof. 
     
     
         23 . A method of manufacturing a semiconductor device, the method comprising:
 providing a workpiece;   forming a material layer over the workpiece;   forming a first anti-reflective coating over the workpiece;   disposing a first photosensitive material over the first anti-reflective coating;   exposing the first photosensitive material and the first anti-reflective coating using a first lithography mask, the first lithography mask comprising a first portion of a pattern;   developing the first photosensitive material, forming the first portion of the pattern in the first photosensistive material;   using the first photosensitive material and/or the first anti-reflective coating as a mask to form the first portion of the pattern in the material layer;   removing the first photosensitive material and the first anti-reflective coating;   forming a second anti-reflective coating over the patterned material layer and exposed portions of the workpiece;   disposing a second photosensitive material over the second anti-reflective coating;   exposing the second photosensitive material using a second lithography mask, the second lithography mask comprising a second portion of a pattern, the second portion of the pattern comprising a different pattern than the first portion of the pattern and intersecting in regions with the first portion of the pattern;   developing the second photosensitive material, forming the second portion of the pattern in the second photosensistive material;   forming a polymer material over the patterned second photosensitive material and over exposed portions of the second anti-reflective coating;   etching portions of the second anti-reflective coating using the polymer material and the patterned second photosensitive material as a mask using an anisotropic etch process; and   using the polymer material and the patterned second photosensitive material and/or the patterned second anti-reflective coating as a mask to pattern the material layer of the workpiece with an enlarged second portion of the pattern.   
     
     
         24 . The method according to  claim 23 , wherein the first lithography mask comprises a lithography mask for a plurality of elongated transistor gates, wherein the second lithography mask comprises a cutter lithography mask adapted to cut the ends of the plurality of elongated transistor gates patterned by the first lithography mask, and wherein the polymer material decreases a tip-to-tip distance between adjacent ends of transistor gates formed in the material layer. 
     
     
         25 . The method according to  claim 24 , wherein a length of the transistor gates formed in the material layer is greater than a length of a pattern in the second lithography mask by about twice a thickness of the polymer material. 
     
     
         26 . The method according to  claim 23 , wherein the anisotropic etch process for etching the second anti-reflective coating using the polymer material and the second photosensitive material includes a redeposition component that forms on sidewalls of the second anti-reflective coating during the etch process, wherein patterning the material layer further comprises using the redeposition component as the mask, and wherein the redeposition component further enlarges the second portion of the pattern transferred to the material layer from the second lithography mask. 
     
     
         27 . The method according to  claim 23 , further comprising introducing a tapered profile to the material layer when using the polymer material and the patterned second photosensitive material and/or the patterned second anti-reflective coating as a mask to pattern the material layer of the workpiece.