Inventor · disambiguated record
Helen Wang
Also filed as: WANG HELEN · WANG HELEN H
12 granted patents·3 pending applications·48 citations·filing 2003–2013
88Inventor score
Top patents by PatentIndex Score
15 records- 0191US9034748B2Process variability tolerant hard mask for replacement metal gate finFET devicesIBM·Filed 2013·Granted May 19, 2015·13 cites·10 claims
- 0276US8158334B2Methods for forming a composite pattern including printed resolution assist featuresGABOR ALLEN H·Filed 2008·Granted Apr 17, 2012·6 cites·20 claims
- 0374US7550303B2Systems and methods for overlay shift determinationIBM·Filed 2006·Granted Jun 23, 2009·5 cites·11 claims
- 0471US7759235B2Semiconductor device manufacturing methodsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jul 20, 2010·5 cites·27 claims
- 0569US8039203B2Integrated circuits and methods of design and manufacture thereofINFINEON TECHNOLOGIES AG·Filed 2008·Granted Oct 18, 2011·3 cites·26 claims
- 0667US7084427B2Systems and methods for overlay shift determinationIBM·Filed 2003·Granted Aug 1, 2006·13 cites·10 claims
- 0766US8697339B2Semiconductor device manufacturing methodsZHUANG HAOREN·Filed 2011·Granted Apr 15, 2014·2 cites·22 claims
- 0861US8629028B2Metal oxide semiconductor field effect transistor (MOSFET) gate terminationIBM·Filed 2013·Granted Jan 14, 2014·1 cites·17 claims
- 0950US2013181267A1Wafer fill patterns and usesIBM·Filed 2013·Application pending·0 cites
- 1047US2008286698A1Semiconductor device manufacturing methodsZHUANG HAOREN·Filed 2007·Application pending·0 cites
- 1146US8507346B2Method of forming a semiconductor device having a cut-way hole to expose a portion of a hardmask layerBURKHARDT MARTIN·Filed 2010·Granted Aug 13, 2013·0 cites·4 claims
- 1241US8704332B2Metal oxide semiconductor field effect transistor (MOSFET) gate terminationBAIOCCO CHRISTOPHER V·Filed 2012·Granted Apr 22, 2014·0 cites·10 claims
- 1339US8564074B2Self-limiting oxygen seal for high-K dielectric and design structureHOOK TERENCE B·Filed 2011·Granted Oct 22, 2013·0 cites·15 claims
- 1437US8642475B2Integrated circuit system with reduced polysilicon residue and method of manufacture thereofHU XIANG·Filed 2010·Granted Feb 4, 2014·0 cites·20 claims
- 1536US2013032897A1Mosfet gate electrode employing arsenic-doped silicon-germanium alloy layerIBM·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →