Inventor · disambiguated record
Len Yuan Tsou
Also filed as: TSOU LEN · TSOU LEN Y · TSOU LEN YUAN
15 granted patents·1 pending application·896 citations·filing 1990–2011
94Inventor score
Top patents by PatentIndex Score
16 records- 0198US6864041B2Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etchingIBM·Filed 2001·Granted Mar 8, 2005·538 cites·12 claims
- 0292US5146426AElectrically erasable and programmable read only memory with trench structurePHILIPS CORP·Filed 1990·Granted Sep 8, 1992·114 cites·10 claims
- 0388US5606521AElectrically erasable and programmable read only memory with non-uniform dielectric thicknessPHILIPS ELECTRONICS NA·Filed 1995·Granted Feb 25, 1997·84 cites·10 claims
- 0485US6884734B2Vapor phase etch trim structure with top etch blocking layerIBM·Filed 2001·Granted Apr 26, 2005·38 cites·38 claims
- 0576US6960510B2Method of making sub-lithographic featuresIBM·Filed 2002·Granted Nov 1, 2005·21 cites·11 claims
- 0676US6528363B2Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etchIBM·Filed 2001·Granted Mar 4, 2003·22 cites·25 claims
- 0771US7759235B2Semiconductor device manufacturing methodsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jul 20, 2010·5 cites·27 claims
- 0871US6828187B1Method for uniform reactive ion etching of dual pre-doped polysilicon regionsIBM·Filed 2004·Granted Dec 7, 2004·17 cites·20 claims
- 0971US6509219B2Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etchIBM·Filed 2001·Granted Jan 21, 2003·17 cites·32 claims
- 1066US8697339B2Semiconductor device manufacturing methodsZHUANG HAOREN·Filed 2011·Granted Apr 15, 2014·2 cites·22 claims
- 1164US6703269B2Method to form gate conductor structures of dual doped polysiliconIBM·Filed 2002·Granted Mar 9, 2004·13 cites·20 claims
- 1259US7541290B2Methods of forming mask patterns on semiconductor wafers that compensate for nonuniform center-to-edge etch rates during photolithographic processingSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·1 cites·8 claims
- 1347US2008286698A1Semiconductor device manufacturing methodsZHUANG HAOREN·Filed 2007·Application pending·0 cites
- 1445US8219938B2Semiconductor inter-field dose correctionLEE HYUNG-RAE·Filed 2009·Granted Jul 10, 2012·0 cites·20 claims
- 1543US6328041B1Universal cleaning wafer for a plasma chamberIBM·Filed 1998·Granted Dec 11, 2001·11 cites·21 claims
- 1643US5240875ASelective oxidation of silicon trench sidewallPHILIPS CORP·Filed 1992·Granted Aug 31, 1993·13 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →