Inventor · disambiguated record
Haoren Zhuang
Also filed as: ZHUANG HAOREN
37 granted patents·12 pending applications·146 citations·filing 1994–2020
96Inventor score
Files withINFINEON TECHNOLOGIES AG23ZHUANG HAOREN5TOSHIBA KK4GLOBALFOUNDRIES INC2SAMSUNG ELECTRONICS CO LTD2
Top patents by PatentIndex Score
49 records- 0194US7598174B1Feature patterning methodsINFINEON TECHNOLOGIES AG·Filed 2008·Granted Oct 6, 2009·26 cites·25 claims
- 0290US9887135B1Methods for providing variable feature widths in a self-aligned spacer-mask patterning processGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 6, 2018·7 cites·20 claims
- 0380US9899257B1Etch stop liner for contact punch through mitigation in SOI substrateGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 20, 2018·3 cites·19 claims
- 0480US8071261B2Lithography masks and methods of manufacture thereofGUTMANN ALOIS·Filed 2007·Granted Dec 6, 2011·6 cites·37 claims
- 0580US7115522B2Method for manufacturing semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 3, 2006·23 cites·18 claims
- 0671US8349528B2Semiconductor devices and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2011·Granted Jan 8, 2013·2 cites·18 claims
- 0771US7759235B2Semiconductor device manufacturing methodsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jul 20, 2010·5 cites·27 claims
- 0869US8039203B2Integrated circuits and methods of design and manufacture thereofINFINEON TECHNOLOGIES AG·Filed 2008·Granted Oct 18, 2011·3 cites·26 claims
- 0969US7674350B2Feature dimension control in a manufacturing processINFINEON TECHNOLOGIES AG·Filed 2007·Granted Mar 9, 2010·2 cites·18 claims
- 1067US7015049B2Fence-free etching of iridium barrier having a steep taper angleTOSHIBA KK·Filed 2003·Granted Mar 21, 2006·11 cites·9 claims
- 1166US8697339B2Semiconductor device manufacturing methodsZHUANG HAOREN·Filed 2011·Granted Apr 15, 2014·2 cites·22 claims
- 1264US7794903B2Metrology systems and methods for lithography processesINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 14, 2010·1 cites·15 claims
- 1362US6762064B1Process for fabrication of a ferrocapacitorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 13, 2004·8 cites·10 claims
- 1461US7071506B2Device for inhibiting hydrogen damage in ferroelectric capacitor devicesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 4, 2006·9 cites·11 claims
- 1561US7041551B2Device and a method for forming a capacitor deviceINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 9, 2006·9 cites·24 claims
- 1659US7541290B2Methods of forming mask patterns on semiconductor wafers that compensate for nonuniform center-to-edge etch rates during photolithographic processingSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·1 cites·8 claims
- 1757US7645663B2Method of producing non volatile memory deviceINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jan 12, 2010·1 cites·31 claims
- 1855US9070759B2Semiconductor device and method of making sameHAN JIN-PING·Filed 2006·Granted Jun 30, 2015·1 cites·16 claims
- 1953US7045837B2Hardmask with high selectivity for Ir barriers for ferroelectric capacitor manufacturingTOSHIBA KK·Filed 2003·Granted May 16, 2006·5 cites·19 claims
- 2052US8394574B2Metrology systems and methods for lithography processesSARMA CHANDRASEKHAR·Filed 2011·Granted Mar 12, 2013·0 cites·24 claims
- 2152US7042705B2Sidewall structure and method of fabrication for reducing oxygen diffusion to contact plugs during CW hole reactive ion etch processingTOSHIBA KK·Filed 2003·Granted May 9, 2006·3 cites·12 claims
- 2251US8007985B2Semiconductor devices and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2006·Granted Aug 30, 2011·0 cites·18 claims
- 2351US6924156B2Method for forming a ferroelectric capacitor deviceINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 2, 2005·3 cites·13 claims
- 2450US7842579B2Method for manufacturing a semiconductor device having doped and undoped polysilicon layersINFINEON TECHNOLOGIES AG·Filed 2007·Granted Nov 30, 2010·0 cites·21 claims
- 2549US8067135B2Metrology systems and methods for lithography processesSARMA CHANDRASEKHAR·Filed 2010·Granted Nov 29, 2011·0 cites·7 claims
- 2649US6897501B2Avoiding shorting in capacitorsINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 24, 2005·4 cites·22 claims
- 2747US5589097AMethod for preparing magnetite magnetic powderTDK CORP·Filed 1994·Granted Dec 31, 1996·8 cites·23 claims
- 2847US2008286698A1Semiconductor device manufacturing methodsZHUANG HAOREN·Filed 2007·Application pending·0 cites
- 2946US7316980B2Method for forming ferrocapacitors and FeRAM devicesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 8, 2008·1 cites·16 claims
- 3046US7098142B2Method of etching ferroelectric devicesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 29, 2006·1 cites·6 claims
- 3146US6734057B2Method of patterning capacitors and capacitors made therebyINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 11, 2004·1 cites·32 claims
- 3246US2010120177A1Feature Dimension Control in a Manufacturing ProcessINFINEON TECHNOLOGIES AG·Filed 2010·Application pending·0 cites
- 3345US8219938B2Semiconductor inter-field dose correctionLEE HYUNG-RAE·Filed 2009·Granted Jul 10, 2012·0 cites·20 claims
- 3444US2004171252A1Reduced contamination of tools in semiconductor processingFiled 2003·Application pending·0 cites
- 3543US8063406B2Semiconductor device having a polysilicon layer with a non-constant doping profileZHUANG HAOREN·Filed 2010·Granted Nov 22, 2011·0 cites·13 claims
- 3642US2021376186A1Diode structure and method of fabricating the sameJIANGSU ADVANCED MEMORY TECH CO LTD·Filed 2020·Application pending·0 cites
- 3740US6785119B2Ferroelectric capacitor and process for its manufactureINFINEON TECHNOLOGIES AG·Filed 2002·Granted Aug 31, 2004·0 cites·10 claims
- 3839US7001781B2Method for producing a ferroelectric capacitor that includes etching with hardmasksINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 21, 2006·0 cites·8 claims
- 3939US6867053B2Fabrication of a FeRAM capacitor using a noble metal hardmaskINFINEON TECHNOLOGIES AG·Filed 2003·Granted Mar 15, 2005·0 cites·7 claims
- 4039US2007239305A1Process control systems and methodsZHUANG HAOREN·Filed 2006·Application pending·0 cites
- 4139US2005130076A1Method for producing a hard mask in a capacitor device and a hard mask for use in a capacitor deviceFiled 2003·Application pending·0 cites
- 4238US7541234B2Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areasSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 2, 2009·0 cites·16 claims
- 4338US2006071258A1Semiconductor deviceTOMIOKA KAZUHIRO·Filed 2004·Application pending·0 cites
- 4438US2004206993A1Process for fabrication of ferroelectric devices with reduced hydrogen ion damageINFINEON TECHNOLOGIES AG·Filed 2003·Application pending·0 cites
- 4537US2004171274A1Method for formation of hardmask elements during a semiconductor device fabrication processFiled 2003·Application pending·0 cites
- 4635US7001780B2Method of fabrication of an FeRAM capacitor and an FeRAM capacitor formed by the methodTOSHIBA KK·Filed 2003·Granted Feb 21, 2006·0 cites·6 claims
- 4735US2005084984A1Method for forming ferrocapacitors and FeRAM devicesFiled 2003·Application pending·0 cites
- 4835US2007190795A1Method for fabricating a semiconductor device with a high-K dielectricZHUANG HAOREN·Filed 2006·Application pending·0 cites
- 4933US2005070030A1Device and method for forming a contact to a top electrode in ferroelectric capacitor devicesFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →