Inventor · disambiguated record
Jin-Aun Ng
Also filed as: NG JIN-AUN
38 granted patents·4 pending applications·184 citations·filing 2009–2024
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD24TAIWAN SEMICONDUCTOR MFG6NG JIN-AUN4CHEN CHIEN HAO2CHEN PO-NIEN1
Top patents by PatentIndex Score
42 records- 0198US11404325B2Silicon and silicon germanium nanowire formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·5 cites·20 claims
- 0297US8586436B2Method of forming a variety of replacement gate types including replacement gate types on a hybrid semiconductor deviceNG JIN-AUN·Filed 2012·Granted Nov 19, 2013·50 cites·10 claims
- 0393US8450834B2Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layersNG JIN-AUN·Filed 2010·Granted May 28, 2013·16 cites·25 claims
- 0493US8343867B2Method for main spacer trim-backTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 1, 2013·16 cites·20 claims
- 0590US10692769B2Fin critical dimension loading optimizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 23, 2020·7 cites·20 claims
- 0688US8039388B1Main spacer trim-back method for replacement gate processTAIWAM SEMICONDUCTOR MFG COMPANY LTD·Filed 2010·Granted Oct 18, 2011·15 cites·21 claims
- 0787US11004747B2Fin critical dimension loading optimizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 11, 2021·2 cites·20 claims
- 0887US9865510B2Device and methods for high-K and metal gate slacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 9, 2018·4 cites·20 claims
- 0987US8822283B2Self-aligned insulated film for high-k metal gate deviceNG JIN-AUN·Filed 2011·Granted Sep 2, 2014·7 cites·20 claims
- 1087US8450161B2Method of fabricating a sealing structure for high-k metal gateCHEN CHIEN-HAO·Filed 2012·Granted May 28, 2013·9 cites·20 claims
- 1185US11545490B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·1 cites·20 claims
- 1285US8003467B2Method for making a semiconductor device having metal gate stacksTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 23, 2011·11 cites·12 claims
- 1384US11398476B2Structure and formation method of semiconductor device with hybrid finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 26, 2022·2 cites·20 claims
- 1481US9947528B2Structure and method for nFET with high k metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 17, 2018·4 cites·17 claims
- 1581US9219125B2Device and methods for high-k and metal gate stacksTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 22, 2015·4 cites·20 claims
- 1680US11133221B2Method for forming semiconductor device structure with gate electrode layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 28, 2021·1 cites·20 claims
- 1780US8871625B2Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layersTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 28, 2014·4 cites·20 claims
- 1880US8193586B2Sealing structure for high-K metal gateCHEN CHIEN-HAO·Filed 2009·Granted Jun 5, 2012·8 cites·20 claims
- 1979US2024395809A1Semiconductor device structure with hybrid finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2078US8698252B2Device for high-K and metal gate stacksCHEN PO-NIEN·Filed 2012·Granted Apr 15, 2014·5 cites·20 claims
- 2177US2025126881A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2276US10388531B2Self-aligned insulated film for high-k metal gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 20, 2019·1 cites·20 claims
- 2375US8373199B2Semiconductor device having a SiGe feature and a metal gate stackTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 12, 2013·4 cites·16 claims
- 2474US12426356B2Semiconductor device structure with hybrid finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 2574US9093559B2Method of hybrid high-k/metal-gate stack fabricationNG JIN-AUN·Filed 2012·Granted Jul 28, 2015·4 cites·20 claims
- 2673US11670711B2Metal gate electrode of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·0 cites·20 claims
- 2773US9000533B2Device and methods for high-K and metal gate stacksWU WEI CHENG·Filed 2012·Granted Apr 7, 2015·3 cites·8 claims
- 2872US12211844B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 2970US11749679B2Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 3068US11854905B2Silicon and silicon germanium nanowire formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3167US9576855B2Device and methods for high-k and metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·1 cites·19 claims
- 3266US10854742B2Metal gate electrode of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·0 cites·20 claims
- 3365US11094545B2Self-aligned insulated film for high-K metal gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·0 cites·20 claims
- 3463US10332991B2Metal gate electrode of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 25, 2019·0 cites·20 claims
- 3560US11075199B2Method of forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·0 cites·20 claims
- 3660US2025374575A1Semiconductor device structure with dielectric nanostructure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3758US9779947B2Self-aligned insulated film for high-k metal gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·0 cites·20 claims
- 3857US9252224B2Self-aligned insulated film for high-k metal gate deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 2, 2016·0 cites·20 claims
- 3956US10204905B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 12, 2019·0 cites·20 claims
- 4054US9991375B2Metal gate electrode of a semiconductor deviceLIN JR JUNG·Filed 2012·Granted Jun 5, 2018·0 cites·20 claims
- 4149US2013270647A1Structure and method for nfet with high k metal gateZHU MING·Filed 2012·Application pending·0 cites
- 4238US8329521B2Method and device with gate structure formed over the recessed top portion of the isolation structureCHUANG HARRY HAK-LAY·Filed 2010·Granted Dec 11, 2012·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →