Inventor · disambiguated record
Jianwei Peng
Also filed as: PENG JIANWEI
37 granted patents·10 pending applications·148 citations·filing 2014–2025
96Inventor score
Files withGLOBALFOUNDRIES INC28GLOBALFOUNDRIES US INC9HANGZHOU PENNO PACKTECH CO LTD4IBM3CHINA TIESIJU CIVIL ENG GROUP1
Top patents by PatentIndex Score
47 records- 0197US10249538B1Method of forming vertical field effect transistors with different gate lengths and a resulting structureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 2, 2019·22 cites·19 claims
- 0296US9947769B1Multiple-layer spacers for field-effect transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 17, 2018·14 cites·9 claims
- 0395US9887094B1Methods of forming EPI semiconductor material on the source/drain regions of a FinFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 6, 2018·14 cites·12 claims
- 0495US9419101B1Multi-layer spacer used in finFETGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 16, 2016·20 cites·20 claims
- 0595US9337306B2Multi-phase source/drain/gate spacer-epi formationGLOBALFOUNDRIES INC·Filed 2014·Granted May 10, 2016·26 cites·16 claims
- 0694US10446483B2Metal-insulator-metal capacitors with enlarged contact areasGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 15, 2019·12 cites·20 claims
- 0793US12020937B2Carbon implantation for thicker gate silicideGLOBALFOUNDRIES US INC·Filed 2022·Granted Jun 25, 2024·2 cites·7 claims
- 0893US10068810B1Multiple Fin heights with dielectric isolationGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 4, 2018·9 cites·10 claims
- 0990US11798948B2Semiconductor structure with shared wellGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 24, 2023·2 cites·12 claims
- 1089US10784342B1Single diffusion breaks formed with liner protection for source and drain regionsGLOBALFOUNDRIES INC·Filed 2019·Granted Sep 22, 2020·6 cites·17 claims
- 1186US11810951B2Semiconductor-on-insulator field effect transistor with performance-enhancing source/drain shapes and/or materialsGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 7, 2023·1 cites·18 claims
- 1283US9406752B2FinFET conformal junction and high EPI surface dopant concentration method and deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 2, 2016·3 cites·13 claims
- 1377US11111054B2Equal-fork palletHANGZHOU PENNO PACKTECH CO LTD·Filed 2018·Granted Sep 7, 2021·4 cites·7 claims
- 1472US10410929B2Multiple gate length device with self-aligned top junctionGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 10, 2019·1 cites·19 claims
- 1572US10211317B1Vertical-transport field-effect transistors with an etched-through source/drain cavityGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 19, 2019·1 cites·20 claims
- 1670US10297675B1Dual-curvature cavity for epitaxial semiconductor growthGLOBALFOUNDRIES INC·Filed 2017·Granted May 21, 2019·1 cites·13 claims
- 1770US9577040B2FinFET conformal junction and high epi surface dopant concentration method and deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 21, 2017·1 cites·20 claims
- 1869US10262903B2Boundary spacer structure and integrationGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 16, 2019·1 cites·15 claims
- 1967US10276689B2Method of forming a vertical field effect transistor (VFET) and a VFET structureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 30, 2019·1 cites·11 claims
- 2067US10121868B1Methods of forming epi semiconductor material on a thinned fin in the source/drain regions of a FinFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 6, 2018·1 cites·20 claims
- 2162US12414343B2Semiconductor device with different sized epitaxial structuresGLOBALFOUNDRIES US INC·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
- 2261US12513995B2Substrates of semiconductor devices having varying thicknesses of semiconductor layersGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 30, 2025·0 cites·13 claims
- 2360US2025318171A1Source/drain structures with improved epitaxial formationIBM·Filed 2024·Application pending·0 cites
- 2460US2025203993A1Nanosheet field effect transistor with continuous spacerIBM·Filed 2023·Application pending·0 cites
- 2559US12389616B2Transistors with multiple silicide layersGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 2659US11935928B2Bipolar transistor with self-aligned asymmetric spacerGLOBALFOUNDRIES US INC·Filed 2022·Granted Mar 19, 2024·0 cites·19 claims
- 2759US2025203906A1Silicon germanium nanosheet transistorIBM·Filed 2023·Application pending·0 cites
- 2857US2025029869A1Isolation structure having different liners on upper and lower portionsGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 2957US2025251738A1Following method and following device of mobile robot based on electromagnetic positioning and readable mediumQUANZHOU EQUIPMENT MANUFACTURING RES INSTITUTE·Filed 2025·Application pending·0 cites
- 3055US2024116829A1Concrete protection material, and preparation method and construction method thereforNATIONAL ENGINEERING RESEARCH CENTER OF HIGH SPEED RAILWAY CONSTRUCTION TECH·Filed 2022·Application pending·0 cites
- 3154USD887665SSupporting plateHANGZHOU PENNO PACKTECH CO LTD·Filed 2017·Granted Jun 16, 2020·6 cites·1 claims
- 3254US10431665B2Multiple-layer spacers for field-effect transistorsGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 1, 2019·0 cites·20 claims
- 3354US9559176B2FinFET conformal junction and abrupt junction with reduced damage method and deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 31, 2017·0 cites·20 claims
- 3451US11101364B2Field-effect transistors with diffusion blocking spacer sectionsGLOBALFOUNDRIES US INC·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 3551US2019181243A1Dual-curvature cavity for epitaxial semiconductor growthGLOBALFOUNDRIES INC·Filed 2019·Application pending·0 cites
- 3650US9397162B1FinFET conformal junction and abrupt junction with reduced damage method and deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 19, 2016·0 cites·15 claims
- 3749US10468310B2Spacer integration scheme for FNET and PFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 5, 2019·0 cites·15 claims
- 3849US10453754B1Diffused contact extension dopants in a transistor deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 22, 2019·0 cites·16 claims
- 3948US11554993B2Highly thixotropic 3D printing concrete and manufacturing method thereforCHINA TIESIJU CIVIL ENG GROUP·Filed 2019·Granted Jan 17, 2023·0 cites·8 claims
- 4048US10910471B2Device with large EPI in FinFETs and method of manufacturingGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 2, 2021·0 cites·10 claims
- 4147US9490174B2Fabricating raised fins using ancillary fin structuresGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 8, 2016·0 cites·19 claims
- 4242US10224330B2Self-aligned junction structuresGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 5, 2019·0 cites·19 claims
- 4339US2019081155A1Nanosheet transistor with improved inner spacerGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 4438US10836071B2Method for processing a molded tray based on bamboo shavingsHANGZHOU PENNO PACKTECH CO LTD·Filed 2018·Granted Nov 17, 2020·0 cites·1 claims
- 4538US10773417B2Method for processing a molded tray based on bamboo-wood mixed shavingsHANGZHOU PENNO PACKTECH CO LTD·Filed 2018·Granted Sep 15, 2020·0 cites·1 claims
- 4636US2017278925A1Introducing material with a lower etch rate to form a t-shaped sdb sti structureGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 4732US2018190792A1Method of forming semiconductor structure and resulting structureGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →