Inventor · disambiguated record
Jigish Trivedi
Also filed as: TRIVEDI JIGISH · TRIVEDI JIGISH D · TRIVEDI JIGISH G
119 granted patents·19 pending applications·2,059 citations·filing 1997–2021
99Inventor score
Top patents by PatentIndex Score
138 records- 0199US7517744B2Capacitorless DRAM on bulk siliconMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 14, 2009·123 cites·19 claims
- 0299US7384849B2Methods of forming recessed access devices associated with semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 10, 2008·113 cites·20 claims
- 0398US6436805B1Local interconnect structures and methods for making the sameMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 20, 2002·215 cites·43 claims
- 0497US8067286B2Methods of forming recessed access devices associated with semiconductor constructionsPAREKH KUNAL R·Filed 2011·Granted Nov 29, 2011·39 cites·14 claims
- 0596US11769844B2Photovoltaic device including a p-n junction and method of manufacturingFIRST SOLAR INC·Filed 2021·Granted Sep 26, 2023·8 cites·32 claims
- 0696US7514366B2Methods for forming shallow trench isolationMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 7, 2009·42 cites·42 claims
- 0795US10243092B2Photovoltaic device including a p-n junction and method of manufacturingFIRST SOLAR INC·Filed 2017·Granted Mar 26, 2019·15 cites·18 claims
- 0895US9698285B2Photovoltaic device including a P-N junction and method of manufacturingFIRST SOLAR INC·Filed 2014·Granted Jul 4, 2017·22 cites·6 claims
- 0995US7897460B2Methods of forming recessed access devices associated with semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2008·Granted Mar 1, 2011·25 cites·12 claims
- 1095US6599789B1Method of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 29, 2003·67 cites·21 claims
- 1194US10529883B2Photovoltaic devices and method of manufacturingFIRST SOLAR INC·Filed 2014·Granted Jan 7, 2020·25 cites·19 claims
- 1294US10461207B2Photovoltaic devices and method of manufacturingFIRST SOLAR INC·Filed 2015·Granted Oct 29, 2019·14 cites·28 claims
- 1394US6524901B1Method for forming a notched damascene planar poly/metal gateMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 25, 2003·84 cites·36 claims
- 1493US11817516B2Photovoltaic devices and method of manufacturingFIRST SOLAR INC·Filed 2019·Granted Nov 14, 2023·7 cites·19 claims
- 1593US9276154B2Photovoltaic device with protective layer over a window layer and method of manufacture of the sameFIRST SOLAR INC·Filed 2014·Granted Mar 1, 2016·18 cites·17 claims
- 1693US6583060B2Dual depth trench isolationMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 24, 2003·95 cites·6 claims
- 1793US5847463ALocal interconnect comprising titanium nitride barrier layerMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 8, 1998·115 cites·22 claims
- 1892US6548401B1Semiconductor processing methods, and semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 15, 2003·60 cites·46 claims
- 1992US6355966B1Methods of forming an integrated circuitry isolation trench, method of forming integrated circuitry, and integrated circuitryMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 12, 2002·60 cites·21 claims
- 2091US6093661AIntegrated circuitry and semiconductor processing method of forming field effect transistorsMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 25, 2000·74 cites·1 claims
- 2190US9799784B2High efficiency photovoltaic device employing cadmium sulfide telluride and method of manufactureFIRST SOLAR INC·Filed 2014·Granted Oct 24, 2017·8 cites·26 claims
- 2289US7332388B2Method to simultaneously form both fully silicided and partially silicided dual work function transistor gates during the manufacture of a semiconductor device, semiconductor devices, and systems including sameMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 19, 2008·18 cites·19 claims
- 2388US7112513B2Sub-micron space liner and densification processMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 26, 2006·37 cites·49 claims
- 2486US6541395B1Semiconductor processing method of forming field effect transistorsMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 1, 2003·31 cites·12 claims
- 2586US6440817B2Methods of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 27, 2002·33 cites·18 claims
- 2686US6335254B1Methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 1, 2002·34 cites·45 claims
- 2785US5981380AMethod of forming a local interconnect including selectively etched conductive layers and recess formationMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 9, 1999·60 cites·65 claims
- 2884US7919829B2Liner for shallow trench isolationMICRON TECHNOLOGY INC·Filed 2007·Granted Apr 5, 2011·9 cites·9 claims
- 2983US6323104B1Method of forming an integrated circuitry isolation trench, method of forming integrated circuitry, and integrated circuitryMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 27, 2001·30 cites·16 claims
- 3082US8158471B2Capacitorless DRAM on bulk siliconMATHEW SURAJ·Filed 2010·Granted Apr 17, 2012·4 cites·10 claims
- 3182US6498088B1Stacked local interconnect structure and method of fabricating sameMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 24, 2002·19 cites·15 claims
- 3281US7341906B2Method of manufacturing sidewall spacers on a memory device, and device comprising sameMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 11, 2008·6 cites·31 claims
- 3381US6277674B1Semiconductor fuses, methods of using the same, methods of making the same, and semiconductor devices containing the sameMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 21, 2001·39 cites·48 claims
- 3480US7601591B2Method of manufacturing sidewall spacers on a memory device, and device comprising sameMICRON TECHNOLOGY INC·Filed 2008·Granted Oct 13, 2009·5 cites·17 claims
- 3580US6875697B2Dual depth trench isolationMICRON TECHNOLOGY INC·Filed 2004·Granted Apr 5, 2005·22 cites·6 claims
- 3680US6534866B1Dual damascene interconnectMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 18, 2003·18 cites·16 claims
- 3780US6482689B2Stacked local interconnect structure and method of fabricating sameMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 19, 2002·17 cites·1 claims
- 3879US8035160B2Recessed access device for a memoryMICRON TECHNOLOGY INC·Filed 2009·Granted Oct 11, 2011·5 cites·34 claims
- 3979US6683365B1Edge intensive antifuse device structureMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 27, 2004·15 cites·14 claims
- 4079US6605533B2Process for forming low resistance metal silicide local interconnectsMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 12, 2003·19 cites·31 claims
- 4178US6893957B2Method of forming a dual damascene interconnect by selective metal depositionMICRON TECHNOLOGY INC·Filed 2002·Granted May 17, 2005·16 cites·16 claims
- 4277US6294464B1Low resistance metal silicide local interconnects and a method of makingMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 25, 2001·18 cites·1 claims
- 4376US7459742B2Method of manufacturing sidewall spacers on a memory device, and device comprising sameMICRON TECHNOLOGY INC·Filed 2006·Granted Dec 2, 2008·4 cites·9 claims
- 4475US6744102B2MOS transistors with nitrogen in the gate oxide of the p-channel transistorMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 1, 2004·14 cites·20 claims
- 4575US6376358B1Method of forming plugs and local interconnect for embedded memory/system-on-chip (SOC) applicationsMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 23, 2002·19 cites·28 claims
- 4674US7271464B2Liner for shallow trench isolationMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 18, 2007·15 cites·18 claims
- 4773US7659181B2Sub-micron space liner and filler processMICRON TECHNOLOGY INC·Filed 2006·Granted Feb 9, 2010·4 cites·23 claims
- 4871US6987291B2Integrated transistor circuitryMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 17, 2006·9 cites·21 claims
- 4971US6677650B2Silicon plugs and local interconnect for embedded memory and system-on-chip (SOC) applicationsMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 13, 2004·15 cites·9 claims
- 5071US6417546B2P-type FET in a CMOS with nitrogen atoms in the gate dielectricMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 9, 2002·21 cites·7 claims
Showing the top 50 of 138 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →