Inventor · disambiguated record
Jian Wu
Also filed as: WU JIAN · WU JIAN-QUAN
11 granted patents·6 pending applications·172 citations·filing 1996–2022
88Inventor score
Files withHEFEI RELIANCE MEMORY LTD5SHANGHAI BRIGHT POWER SEMICONDUCTOR CO LTD4UNITY SEMICONDUCTOR CORP3BAKER HUGHES INC1PARRILLO LOUIS1
Top patents by PatentIndex Score
17 records- 0193US10186553B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Jan 22, 2019·6 cites·20 claims
- 0289US9818799B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Nov 14, 2017·4 cites·20 claims
- 0389US5892361AUse of raw amplitude and phase in propagation resistivity measurements to measure borehole environmental parametersBAKER HUGHES INC·Filed 1996·Granted Apr 6, 1999·115 cites·33 claims
- 0479US11765914B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 0575US11289542B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Mar 29, 2022·0 cites·19 claims
- 0675US9484533B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Nov 1, 2016·1 cites·20 claims
- 0769US11037987B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 0868US6060884AMethod and apparatus for measuring electromagnetic properties of materials in borehole environs and simultaneously determining the quality of the measurementsFiled 1998·Granted May 9, 2000·46 cites·17 claims
- 0967US10535714B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2018·Granted Jan 14, 2020·0 cites·20 claims
- 1056US12446298B2Enhanced capacitor for integration with metal-oxide semiconductor field-effect transistorSHANGHAI BRIGHT POWER SEMICONDUCTOR CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·21 claims
- 1156US2013082232A1Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory CellsWU JIAN·Filed 2011·Application pending·0 cites
- 1255US12501711B2Three-dimensional bipolar-CMOS-DMOS (BCD) structure with integrated back-side capacitorSHANGHAI BRIGHT POWER SEMICONDUCTOR CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·22 claims
- 1355US2023343869A1Metal-oxide semiconductor field-effect transistor having enhanced high-frequency performanceSHANGHAI BRIGHT POWER SEMICONDUCTOR CO LTD·Filed 2022·Application pending·0 cites
- 1450US2023335636A1Metal-oxide semiconductor field-effect transistor having enhanced high-frequency performance and methods for fabricating sameSHANGHAI BRIGHT POWER SEMICONDUCTOR CO LTD·Filed 2022·Application pending·0 cites
- 1545US2022384594A1Metal-oxide-semiconductor field-effect transistor having enhanced high-frequency performancePOWERLITE SEMICONDUCTOR SHANGHAI CO LTD·Filed 2022·Application pending·0 cites
- 1640US2013043452A1Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non Volatile Two Terminal Memory ElementsUNITY SEMICONDUCTOR CORP·Filed 2011·Application pending·0 cites
- 1739US2013082228A1Memory Device Using Multiple Tunnel Oxide LayersPARRILLO LOUIS·Filed 2011·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Jian Wu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →