Inventor · disambiguated record
Jianhua Yang
Also filed as: YANG JIANHUA · YANG JIANHUA YA
68 granted patents·9 pending applications·323 citations·filing 2008–2015
98Inventor score
Files withYANG JIANHUA29HEWLETT PACKARD DEVELOPMENT CO12PICKETT MATTHEW D4BRATKOVSKI ALEXANDRE M3STRACHAN JOHN PAUL3
Top patents by PatentIndex Score
77 records- 0195US8415652B2Memristors with a switching layer comprising a composite of multiple phasesYANG JIANHUA·Filed 2010·Granted Apr 9, 2013·21 cites·17 claims
- 0294US8525553B1Negative differential resistance comparator circuitsYI WEI·Filed 2012·Granted Sep 3, 2013·23 cites·15 claims
- 0392US8546785B2Memristive deviceYANG JIANHUA·Filed 2010·Granted Oct 1, 2013·14 cites·12 claims
- 0492US8325507B2Memristors with an electrode metal reservoir for dopantsYANG JIANHUA·Filed 2010·Granted Dec 4, 2012·15 cites·20 claims
- 0589US8575585B2Memristive deviceYANG JIANHUA·Filed 2009·Granted Nov 5, 2013·18 cites·15 claims
- 0688US9082533B2Memristive element based on hetero-junction oxideYANG JIANHUA·Filed 2011·Granted Jul 14, 2015·7 cites·22 claims
- 0788US8324976B2Oscillator circuitry having negative differential resistanceBORGHETTI JULIEN·Filed 2011·Granted Dec 4, 2012·9 cites·20 claims
- 0888US7985962B2Memristive deviceHEWLETT PACKARD DEVELOPMENT CO·Filed 2008·Granted Jul 26, 2011·17 cites·14 claims
- 0987US8921960B2Memristor cell structures for high density arraysYANG JIANHUA·Filed 2012·Granted Dec 30, 2014·8 cites·19 claims
- 1087US8891284B2Memristors based on mixed-metal-valence compoundsWILLIAMS R STANLEY·Filed 2009·Granted Nov 18, 2014·13 cites·14 claims
- 1187US8450711B2Semiconductor memristor devicesWILLIAMS R STANLEY·Filed 2009·Granted May 28, 2013·13 cites·17 claims
- 1286US9040948B2Nanoscale switching deviceRIBEIRO GILBERTO·Filed 2010·Granted May 26, 2015·9 cites·11 claims
- 1386US8259485B2Multilayer structures having memory elements with varied resistance of switching layersYANG JIANHUA·Filed 2010·Granted Sep 4, 2012·9 cites·21 claims
- 1485US8093575B2Memristive device with a bi-metallic electrodeXIA QIANGFEI·Filed 2009·Granted Jan 10, 2012·15 cites·19 claims
- 1584US8063395B2Memristor amorphous metal alloy electrodesXIA QIANGFEI·Filed 2009·Granted Nov 22, 2011·12 cites·20 claims
- 1683US9184382B2Memristive devices with layered junctions and methods for fabricating the samePICKETT MATTHEW D·Filed 2010·Granted Nov 10, 2015·4 cites·20 claims
- 1783US8207593B2Memristor having a nanostructure in the switching materialBRATKOVSKI ALEXANDRE M·Filed 2009·Granted Jun 26, 2012·11 cites·17 claims
- 1882US8829581B1Resistive memory devicesHEWLETT PACKARD DEVELOPMENT CO·Filed 2013·Granted Sep 9, 2014·4 cites·20 claims
- 1982US8737113B2Memory resistor having multi-layer electrodesYANG JIANHUA·Filed 2010·Granted May 27, 2014·6 cites·16 claims
- 2081US8766228B2Electrically actuated device and method of controlling the formation of dopants thereinYANG JIANHUA·Filed 2008·Granted Jul 1, 2014·7 cites·11 claims
- 2180US9870822B2Non-volatile memory element with thermal-assisted switching controlHEWLETT PACKARD DEVELOPMENT CO LP·Filed 2013·Granted Jan 16, 2018·6 cites·19 claims
- 2279US8882217B2Printhead assembly including memory elementsLEA PERRY V·Filed 2011·Granted Nov 11, 2014·3 cites·21 claims
- 2378US8455852B2Controlled placement of dopants in memristor active regionsQUITORIANO NATHANIEL J·Filed 2009·Granted Jun 4, 2013·6 cites·20 claims
- 2478US8385101B2Memory resistor having plural different active materialsHEWLETT PACKARD DEVELOPMENT CO·Filed 2010·Granted Feb 26, 2013·6 cites·17 claims
- 2576US9331278B2Forming memristors on imaging devicesHEWLETT PACKARD DEVELOPMENT CO·Filed 2014·Granted May 3, 2016·2 cites·15 claims
- 2676US8830727B2Multi-level memory cell with continuously tunable switchingYI WEI·Filed 2011·Granted Sep 9, 2014·5 cites·13 claims
- 2772US8331131B2Changing a memristor stateMIAO FENG·Filed 2011·Granted Dec 11, 2012·5 cites·15 claims
- 2871US8487289B2Electrically actuated deviceYANG JIANHUA·Filed 2010·Granted Jul 16, 2013·3 cites·17 claims
- 2971US8437172B2Decoders using memristive switchesFIORENTINO MARCO·Filed 2009·Granted May 7, 2013·7 cites·15 claims
- 3070US8890106B2Hybrid circuit of nitride-based transistor and memristorHEWLETT PACKARD DEVELOPMENT CO·Filed 2012·Granted Nov 18, 2014·4 cites·19 claims
- 3170US8767438B2Memelectronic deviceYANG JIANHUA·Filed 2012·Granted Jul 1, 2014·4 cites·20 claims
- 3270US8530873B2Electroforming free memristor and method for fabricating thereofYANG JIANHUA·Filed 2010·Granted Sep 10, 2013·2 cites·15 claims
- 3369US9178153B2Memristor structure with a dopant sourceZHANG MINXIAN MAX·Filed 2011·Granted Nov 3, 2015·4 cites·20 claims
- 3468US8779409B2Low energy memristors with engineered switching channel materialsHEWLETT PACKARD DEVELOPMENT CO·Filed 2012·Granted Jul 15, 2014·3 cites·16 claims
- 3568US8710483B2Memristive junction with intrinsic rectifierYANG JIANHUA·Filed 2009·Granted Apr 29, 2014·3 cites·15 claims
- 3666US9466793B2Memristors having at least one junctionCHO HANS S·Filed 2010·Granted Oct 11, 2016·2 cites·13 claims
- 3765US8207520B2Programmable crosspoint device with an integral diodeYANG JIANHUA·Filed 2010·Granted Jun 26, 2012·2 cites·11 claims
- 3864US8710865B2Field-programmable analog array with memristorsYANG JIANHUA·Filed 2011·Granted Apr 29, 2014·2 cites·16 claims
- 3963US8519372B2Electroforming-free nanoscale switching deviceYANG JIANHUA·Filed 2009·Granted Aug 27, 2013·2 cites·12 claims
- 4062US8779848B2Two terminal memcapacitor devicePICKETT MATTHEW D·Filed 2009·Granted Jul 15, 2014·2 cites·20 claims
- 4160US8330952B2Guided mode resonator based Raman enhancement apparatusWU WEI·Filed 2009·Granted Dec 11, 2012·2 cites·20 claims
- 4260US8283649B2Memristor with a non-planar substrateBRATKOVSKI ALEXANDRE M·Filed 2009·Granted Oct 9, 2012·4 cites·20 claims
- 4360US8264868B2Memory array with metal-insulator transition switching devicesRIBEIRO GILBERTO MEDEIROS·Filed 2010·Granted Sep 11, 2012·2 cites·19 claims
- 4459US9171613B2Memristors with asymmetric electrodesBRATKOVSKI ALEXANDRE M·Filed 2009·Granted Oct 27, 2015·3 cites·19 claims
- 4559US8872153B2Device structure for long endurance memristorsYANG JIANHUA·Filed 2010·Granted Oct 28, 2014·2 cites·13 claims
- 4657US8437072B2Individually addressable nano-scale mechanical actuatorsYANG JIANHUA·Filed 2009·Granted May 7, 2013·0 cites·15 claims
- 4753US8586959B2Memristive switch devicePICKETT MATTHEW D·Filed 2010·Granted Nov 19, 2013·1 cites·20 claims
- 4852US9889659B2Printhead with a memristorHEWLETT PACKARD DEVELOPMENT CO·Filed 2014·Granted Feb 13, 2018·0 cites·18 claims
- 4952US9196354B2Memory resistor adjustment using feedback controlSTRACHAN JOHN PAUL·Filed 2010·Granted Nov 24, 2015·1 cites·20 claims
- 5051US9041157B2Method for doping an electrically actuated deviceWU WEI·Filed 2009·Granted May 26, 2015·0 cites·15 claims
Showing the top 50 of 77 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →