Inventor · disambiguated record

Jia-Ni Yu

Also filed as: YU JIA-NI

89 granted patents·48 pending applications·132 citations·filing 2017–2025

99Inventor score

Technology areasH10P H10D H10W H01L B82Y

Files withTAIWAN SEMICONDUCTOR MFG CO LTD137

Top patents by PatentIndex Score

137 records

0199US11615962B2Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·6 cites·20 claims
0299US11502168B2Tuning threshold voltage in nanosheet transitor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·7 cites·20 claims
0399US11450664B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·5 cites·20 claims
0499US11387346B2Gate patterning process for multi-gate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·11 cites·20 claims
0598US11710667B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 25, 2023·5 cites·20 claims
0698US11600533B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·4 cites·20 claims
0798US11257815B2Work function design to increase density of nanosheet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·4 cites·20 claims
0898US11145734B1Semiconductor device with dummy fin and liner and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·7 cites·20 claims
0997US12119391B2Fin-based semiconductor device structure including self-aligned contacts and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 15, 2024·2 cites·20 claims
1097US11996334B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
1197US11961840B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·2 cites·20 claims
1296US12170231B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 17, 2024·2 cites·20 claims
1396US12107131B2Gate-all-around devices having self-aligned capping between channel and backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·2 cites·20 claims
1496US11862633B2Work function design to increase density of nanosheet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
1595US12087772B2Nanosheet device architecture for cell-height scalingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·2 cites·20 claims
1695US12062693B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 13, 2024·2 cites·20 claims
1795US11894367B2Integrated circuit including dipole incorporation for threshold voltage tuning in transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
1895US11791218B2Dipole patterning for CMOS devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·3 cites·18 claims
1995US11594614B2P-metal gate first gate replacement process for multigate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·3 cites·20 claims
2094US11848326B2Integrated circuits with gate cut featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 19, 2023·2 cites·20 claims
2194US11728401B2Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
2294US10937704B1Mixed workfunction metal for nanosheet deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·8 cites·20 claims
2393US11894460B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·19 claims
2493US11563109B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·2 cites·20 claims
2593US11205650B2Input/output semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 21, 2021·6 cites·20 claims
2693US10872891B2Integrated circuits with gate cut featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·5 cites·20 claims
2792US11670692B2Gate-all-around devices having self-aligned capping between channel and backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
2892US11217585B2Forming dielectric dummy fins with different heights in different regions of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 4, 2022·5 cites·20 claims
2992US10388771B1Method and device for forming cut-metal-gate featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 20, 2019·5 cites·20 claims
3091US11374105B2Nanosheet device with dipole dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·2 cites·20 claims
3190US2025359115A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3289US11948987B2Self-aligned backside source contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 2, 2024·2 cites·20 claims
3389US10867867B2Methods of fabricating semiconductor devices with mixed threshold voltages boundary isolation of multiple gates and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·3 cites·20 claims
3489US2025324753A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3589US2025386593A1Integrated circuits with gate cut featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3688US10930763B2Method and device for forming metal gate electrodes for transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·3 cites·20 claims
3787US12477766B2Semiconductor transistor device structure including nanostructure and gate structure with protection layer and fill layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
3887US12396248B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
3987US12389675B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·18 claims
4087US11869955B2Integrated circuit with nanosheet transistors with robust gate oxideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 9, 2024·1 cites·20 claims
4187US2025331286A1Semiconductor Device Fabrication Methods And Structures ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4286US12453173B2Integrated circuits with gate cut featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
4385US11670723B2Silicon channel temperingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·1 cites·20 claims
4485US2024387687A1Nanosheet device with dipole dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4584US12507474B2Input/output semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 23, 2025·0 cites·20 claims
4684US12266544B2Reversed tone patterning method for dipole incorporation for multiple threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 1, 2025·0 cites·20 claims
4784US12166100B2Nanosheet device with dipole dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
4884US12148750B2Work function design to increase density of nanosheet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
4984US2025324636A1Device having a gate electrode wrapping around semiconductor layers and proximate to a dielectric finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
5084US2025316495A1Nanostructure Field-Effect Transistor Device and Method of FormingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 137 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →