Inventor · disambiguated record

Jixin Yu

Also filed as: YU JIXIN

31 granted patents·8 pending applications·1,325 citations·filing 2009–2023

98Inventor score

Technology areasH10W H01L H10P G11C H10B

Files withSANDISK TECHNOLOGIES LLC29 SANDISK TECHNOLOGIES INC4 MICRON TECHNOLOGY INC3 WESTERN DIGITAL TECH INC3

Top patents by PatentIndex Score

39 records

0199US11380707B2Three-dimensional memory device including backside trench support structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 5, 2022·9 cites·20 claims
0299US9728551B1Multi-tier replacement memory stack structure integration schemeSANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 8, 2017·78 cites·36 claims
0399US9673213B1Three dimensional memory device with peripheral devices under dummy dielectric layer stack and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2016·Granted Jun 6, 2017·77 cites·23 claims
0498US10269620B2Multi-tier memory device with through-stack peripheral contact via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 23, 2019·34 cites·15 claims
0598US10249640B2Within-array through-memory-level via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 2, 2019·52 cites·27 claims
0698US10038006B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 31, 2018·63 cites·28 claims
0798US10020363B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 10, 2018·51 cites·17 claims
0898US10008570B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jun 26, 2018·62 cites·16 claims
0998US9985098B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 29, 2018·85 cites·11 claims
1098US9818759B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 14, 2017·52 cites·13 claims
1198US9818693B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 14, 2017·57 cites·20 claims
1298US9449987B1Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistorsSANDISK TECHNOLOGIES INC·Filed 2016·Granted Sep 20, 2016·454 cites·28 claims
1397US10381443B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·28 cites·10 claims
1497US10256248B2Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 9, 2019·42 cites·25 claims
1596US10217746B1Three-dimensional memory device having L-shaped word lines and a support structure and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 26, 2019·32 cites·12 claims
1696US10115732B2Three dimensional memory device containing discrete silicon nitride charge storage regionsSANDISK TECHNOLOGIES INC·Filed 2016·Granted Oct 30, 2018·33 cites·17 claims
1796US9985046B2Method of forming a staircase in a semiconductor device using a linear alignment control featureSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 29, 2018·17 cites·9 claims
1895US10707228B2Three-dimensional memory device having bonding structures connected to bit lines and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 7, 2020·10 cites·13 claims
1995US10354956B1Three-dimensional memory device containing hydrogen diffusion barrier structures for CMOS under array architecture and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·13 cites·12 claims
2094US9859363B2Self-aligned isolation dielectric structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jan 2, 2018·15 cites·31 claims
2193US11043455B2Three-dimensional memory device including self-aligned dielectric isolation regions for connection via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 22, 2021·9 cites·12 claims
2292US10854629B2Three-dimensional memory device containing asymmetric, different size support pillars and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 1, 2020·11 cites·2 claims
2392US10658381B1Memory die having wafer warpage reduction through stress balancing employing rotated three-dimensional memory arrays and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 19, 2020·12 cites·5 claims
2489US10804197B1Memory die containing stress reducing backside contact via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 13, 2020·9 cites·19 claims
2587US10074666B2Three-dimensional memory device with enhanced mechanical stability semiconductor pedestal and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Sep 11, 2018·6 cites·26 claims
2686US10453748B2Methods of forming semiconductor device structures including stair step structuresMICRON TECHNOLOGY INC·Filed 2015·Granted Oct 22, 2019·4 cites·13 claims
2784US10115440B2Word line contact regions for three-dimensional non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·7 cites·16 claims
2870US2024414917A1Memory device including word line contact strips and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
2966US7943463B2Methods of semiconductor processing involving forming doped polysilicon on undoped polysiliconMICRON TECHNOLOGY INC·Filed 2009·Granted May 17, 2011·3 cites·18 claims
3063US10825826B2Three-dimensional memory device having bonding structures connected to bit lines and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 3, 2020·0 cites·7 claims
3161US2024334695A1Three-dimensional memory device containing composite dielectric isolation structure in a staircase region and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
3258US10672657B2Semiconductor device structures including stair step structures, and related semiconductor devicesMICRON TECHNOLOGY INC·Filed 2018·Granted Jun 2, 2020·0 cites·15 claims
3355US2025079294A1Stairless three-dimensional memory device with layer contact via structures located above support pillar structures and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
3455US2024386959A1Three-dimensional memory device including trench bridge structures having different volumes and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
3554US2024250023A1Three-dimensional memory device and method of making thereof including expanded support openings and double spacer word line contact formationSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
3654US2024251551A1Three-dimensional memory device and method of making thereof including expanded support openings and double spacer word line contact formationSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
3753US12322710B2Three-dimensional memory device with finned support pillar structures and method of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jun 3, 2025·0 cites·14 claims
3853US2024290714A1Three-dimensional memory device containing multi-level word line contact wells and methods for manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
3949US2021210503A1Three-dimensional memory device with dielectric isolated via structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Application pending·0 cites

Join the waitlist — get patent alerts

Get an alert when Jixin Yu files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →