Inventor · disambiguated record

Jifeng Zhu

Also filed as: ZHU JIFENG

44 granted patents·12 pending applications·181 citations·filing 2015–2025

97Inventor score

Technology areasH10W H10P H01L H10D H10F

Files withYANGTZE MEMORY TECH CO LTD48 WUHAN XINXIN SEMICONDUCTOR MFG5 HUAWEI TECH CO LTD3

Top patents by PatentIndex Score

56 records

0198US11133325B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 28, 2021·14 cites·9 claims
0298US10283452B2Three-dimensional memory devices having a plurality of NAND stringsYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 7, 2019·61 cites·13 claims
0394US11031333B2Three-dimensional memory devices having a plurality of NAND stringsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 8, 2021·8 cites·19 claims
0494US10580788B2Methods for forming three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 3, 2020·14 cites·20 claims
0592US11211397B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 28, 2021·6 cites·14 claims
0692US10680003B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 9, 2020·6 cites·12 claims
0792US10672711B2Word line contact structure for three-dimensional memory devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 2, 2020·7 cites·19 claims
0891US11276642B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 15, 2022·2 cites·19 claims
0991US10867678B2Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 15, 2020·8 cites·19 claims
1091US10763158B2Method for forming lead wires in hybrid-bonded semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Sep 1, 2020·6 cites·15 claims
1191US10679941B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 9, 2020·6 cites·12 claims
1290US11991880B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted May 21, 2024·2 cites·9 claims
1390US11322392B2Method for forming lead wires in hybrid-bonded semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted May 3, 2022·2 cites·5 claims
1490US10748851B1Hybrid bonding using dummy bonding contacts and dummy interconnectsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Aug 18, 2020·6 cites·20 claims
1589US11462503B2Hybrid bonding using dummy bonding contactsYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 4, 2022·2 cites·10 claims
1689US10515975B1Method for forming dual-deck channel hole structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 24, 2019·6 cites·20 claims
1788US11205619B2Hybrid bonding using dummy bonding contacts and dummy interconnectsYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Dec 21, 2021·2 cites·9 claims
1887US10840125B2Memory structure and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Nov 17, 2020·6 cites·18 claims
1986US10784225B2Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Sep 22, 2020·4 cites·16 claims
2086US10644015B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 5, 2020·3 cites·9 claims
2186US2025031366A1Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
2283US11145666B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 12, 2021·1 cites·20 claims
2383US10497708B1Memory structure and forming method thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 3, 2019·4 cites·20 claims
2482US11049834B2Hybrid bonding using dummy bonding contactsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 29, 2021·3 cites·20 claims
2582US10847528B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Nov 24, 2020·1 cites·20 claims
2681US12137558B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
2780US10796993B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 6, 2020·1 cites·20 claims
2876US12010838B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 11, 2024·0 cites·20 claims
2975US11996322B2Method for forming lead wires in hybrid-bonded semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted May 28, 2024·0 cites·20 claims
3075US11670543B2Method for forming lead wires in hybrid-bonded semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jun 6, 2023·0 cites·16 claims
3175US2023422504A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
3273US12063780B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 13, 2024·0 cites·20 claims
3373US11699657B2Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layerYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 11, 2023·0 cites·17 claims
3472US11791265B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
3570US11805646B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 31, 2023·0 cites·21 claims
3668US2023005873A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
3764US12490440B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Granted Dec 2, 2025·0 cites·20 claims
3864US11430756B2Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 30, 2022·0 cites·20 claims
3964US2021398932A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Application pending·0 cites
4063US11101276B2Word line contact structure for three-dimensional memory devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 24, 2021·0 cites·18 claims
4162US11462474B2Three-dimensional memory devices having a plurality of NAND stringsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 4, 2022·0 cites·20 claims
4262US11056387B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 6, 2021·0 cites·20 claims
4360US2024178103A1Chip Stacked Structure and Manufacturing Method Thereof, Chip Package Structure, and Electronic DeviceHUAWEI TECH CO LTD·Filed 2024·Application pending·0 cites
4458US2021335745A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Application pending·0 cites
4556US10804287B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Oct 13, 2020·0 cites·10 claims
4655US10651087B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 12, 2020·0 cites·10 claims
4753US2020006275A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Application pending·0 cites
4852US2020006284A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Application pending·0 cites
4951US2023361082A1Chip stacking structure and manufacturing method thereof, chip package structure, and electronic deviceHUAWEI TECH CO LTD·Filed 2023·Application pending·0 cites
5046US10607887B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 31, 2020·0 cites·20 claims

Showing the top 50 of 56 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →