Inventor · disambiguated record
Johann Alsmeier
Also filed as: ALSMEIER JOHANN
246 granted patents·24 pending applications·9,570 citations·filing 1994–2024
99Inventor score
Top patents by PatentIndex Score
270 records- 0199US11380707B2Three-dimensional memory device including backside trench support structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 5, 2022·9 cites·20 claims
- 0299US11195857B2Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 7, 2021·7 cites·20 claims
- 0399US10629616B1Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 21, 2020·143 cites·20 claims
- 0499US10355009B1Concurrent formation of memory openings and contact openings for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·62 cites·10 claims
- 0599US10290643B1Three-dimensional memory device containing floating gate select transistorSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 14, 2019·44 cites·11 claims
- 0699US9728551B1Multi-tier replacement memory stack structure integration schemeSANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 8, 2017·78 cites·36 claims
- 0799US9673213B1Three dimensional memory device with peripheral devices under dummy dielectric layer stack and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2016·Granted Jun 6, 2017·77 cites·23 claims
- 0899US9449985B1Memory cell with high-k charge trapping layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·41 cites·29 claims
- 0999US9449982B2Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·71 cites·20 claims
- 1099US9425299B1Three-dimensional memory device having a heterostructure quantum well channelSANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 23, 2016·50 cites·22 claims
- 1199US9230987B2Multilevel memory stack structure and methods of manufacturing the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 5, 2016·126 cites·38 claims
- 1299US9230976B2Method of making ultrahigh density vertical NAND memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·42 cites·20 claims
- 1399US9227456B2Memories with cylindrical read/write stacksSANDISK 3D LLC·Filed 2013·Granted Jan 5, 2016·188 cites·14 claims
- 1499US9230974B1Methods of selective removal of blocking dielectric in NAND memory stringsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·56 cites·39 claims
- 1599US9230973B2Methods of fabricating a three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·207 cites·28 claims
- 1699US9230980B2Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·50 cites·12 claims
- 1799US9023719B2High aspect ratio memory hole channel contact formationSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 5, 2015·137 cites·36 claims
- 1899US8946023B2Method of making a vertical NAND device using sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2013·Granted Feb 3, 2015·96 cites·20 claims
- 1999US8946810B2Ultrahigh density vertical NAND memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 3, 2015·43 cites·12 claims
- 2099US8884357B2Vertical NAND and method of making thereof using sequential stack etching and landing padSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 11, 2014·106 cites·24 claims
- 2199US8878278B2Compact three dimensional vertical NAND and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2013·Granted Nov 4, 2014·136 cites·24 claims
- 2299US8847302B2Vertical NAND device with low capacitance and silicided word linesALSMEIER JOHANN·Filed 2012·Granted Sep 30, 2014·108 cites·12 claims
- 2399US8829591B2Ultrahigh density vertical NAND memory deviceSANDISK TECHNOLOGIES INC·Filed 2013·Granted Sep 9, 2014·45 cites·20 claims
- 2499US8765543B2Method of making an ultrahigh density vertical NAND memory device with shielding wingsSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jul 1, 2014·53 cites·9 claims
- 2599US8580639B2Method of making ultrahigh density vertical NAND memory deviceALSMEIER JOHANN·Filed 2013·Granted Nov 12, 2013·53 cites·8 claims
- 2699US8461000B2Method of making ultrahigh density vertical NAND memory deviceSANDISK TECHNOLOGIES INC·Filed 2012·Granted Jun 11, 2013·69 cites·11 claims
- 2799US8445347B23D vertical NAND and method of making thereof by front and back side processingALSMEIER JOHANN·Filed 2011·Granted May 21, 2013·93 cites·14 claims
- 2899US8349681B2Ultrahigh density monolithic, three dimensional vertical NAND memory deviceSANDISK TECHNOLOGIES INC·Filed 2010·Granted Jan 8, 2013·290 cites·13 claims
- 2999US8283228B2Method of making ultrahigh density vertical NAND memory deviceALSMEIER JOHANN·Filed 2012·Granted Oct 9, 2012·122 cites·18 claims
- 3099US8198672B2Ultrahigh density vertical NAND memory deviceALSMEIER JOHANN·Filed 2010·Granted Jun 12, 2012·145 cites·7 claims
- 3199US8193054B2Ultrahigh density vertical NAND memory device and method of making thereofALSMEIER JOHANN·Filed 2010·Granted Jun 5, 2012·152 cites·12 claims
- 3299US8187936B2Ultrahigh density vertical NAND memory device and method of making thereofALSMEIER JOHANN·Filed 2010·Granted May 29, 2012·304 cites·18 claims
- 3398US11856765B2Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 26, 2023·6 cites·14 claims
- 3498US11387142B1Semiconductor device containing bit lines separated by air gaps and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 12, 2022·7 cites·20 claims
- 3598US11296101B2Three-dimensional memory device including an inter-tier etch stop layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 5, 2022·9 cites·21 claims
- 3698US10868042B1Ferroelectric memory device containing word lines and pass gates and method of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 15, 2020·31 cites·20 claims
- 3798US10727215B1Three-dimensional memory device with logic signal routing through a memory die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 28, 2020·21 cites·18 claims
- 3898US10388666B1Concurrent formation of memory openings and contact openings for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 20, 2019·19 cites·5 claims
- 3998US10269620B2Multi-tier memory device with through-stack peripheral contact via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 23, 2019·34 cites·15 claims
- 4098US10249640B2Within-array through-memory-level via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 2, 2019·52 cites·27 claims
- 4198US10050054B2Three-dimensional memory device having drain select level isolation structure and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 14, 2018·26 cites·9 claims
- 4298US10038006B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 31, 2018·63 cites·28 claims
- 4398US10008570B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jun 26, 2018·62 cites·16 claims
- 4498US9972640B1Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 15, 2018·65 cites·3 claims
- 4598US9972641B1Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 15, 2018·68 cites·30 claims
- 4698US9922987B1Three-dimensional memory device containing separately formed drain select transistors and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 20, 2018·99 cites·24 claims
- 4798US9917100B2Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 13, 2018·52 cites·22 claims
- 4898US9853043B2Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill materialSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 26, 2017·49 cites·17 claims
- 4998US9831266B2Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 28, 2017·58 cites·24 claims
- 5098US9818759B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 14, 2017·52 cites·13 claims
Showing the top 50 of 270 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →