Inventor · disambiguated record
John Amato
Also filed as: AMATO JOHN · AMATO JOHN E
17 granted patents·1 pending application·274 citations·filing 1995–2013
94Inventor score
Top patents by PatentIndex Score
18 records- 0195US6657254B2Trench MOSFET device with improved on-resistanceGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 2, 2003·86 cites·14 claims
- 0294US8581376B2Stacked dual chip package and method of fabricationYILMAZ HAMZA·Filed 2010·Granted Nov 12, 2013·22 cites·23 claims
- 0385US6822288B2Trench MOSFET device with polycrystalline silicon source contact structureGEN SEMICONDUCTOR INC·Filed 2001·Granted Nov 23, 2004·32 cites·16 claims
- 0475US6657255B2Trench DMOS device with improved drain contactGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 2, 2003·19 cites·16 claims
- 0574US5882986ASemiconductor chips having a mesa structure provided by sawingGEN SEMICONDUCTOR INC·Filed 1998·Granted Mar 16, 1999·48 cites·9 claims
- 0671US6645815B2Method for forming trench MOSFET device with low parasitic resistanceGEN SEMICONDUCTOR INC·Filed 2001·Granted Nov 11, 2003·15 cites·20 claims
- 0765US6977203B2Method of forming narrow trenches in semiconductor substratesGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 20, 2005·10 cites·10 claims
- 0863US9165866B2Stacked dual chip package having leveling projectionsALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Oct 20, 2015·1 cites·16 claims
- 0962US6630402B2Integrated circuit resistant to the formation of cracks in a passivation layerGEN SEMICONDUCTOR INC·Filed 2001·Granted Oct 7, 2003·10 cites·18 claims
- 1054US7094640B2Method of making a trench MOSFET device with improved on-resistanceGEN SEMICONDUCTOR INC·Filed 2003·Granted Aug 22, 2006·5 cites·6 claims
- 1154US6558984B2Trench schottky barrier rectifier and method of making the sameGEN SEMICONDUCTOR INC·Filed 2002·Granted May 6, 2003·5 cites·17 claims
- 1251US7049194B2Trench DMOS device with improved drain contactGEN SEMICONDUCTOR INC·Filed 2003·Granted May 23, 2006·4 cites·2 claims
- 1346US7015125B2Trench MOSFET device with polycrystalline silicon source contact structureGEN SEMICONDUCTOR INC·Filed 2004·Granted Mar 21, 2006·2 cites·5 claims
- 1446US6420768B1Trench schottky barrier rectifier and method of making the sameGEN SEMICONDUCTOR INC·Filed 2000·Granted Jul 16, 2002·2 cites·9 claims
- 1544US5640043AHigh voltage silicon diode with optimum placement of silicon-germanium layersGEN INSTRUMENT CORP·Filed 1995·Granted Jun 17, 1997·10 cites·15 claims
- 1632US2005040459A1Method and structure for improving the gate resistance of a closed cell trench power MOSFETFiled 2003·Application pending·0 cites
- 1731US6248651B1Low cost method of fabricating transient voltage suppressor semiconductor devices or the likeGEN SEMICONDUCTOR INC·Filed 1998·Granted Jun 19, 2001·3 cites·16 claims
- 1827US5635414ALow cost method of fabricating shallow junction, Schottky semiconductor devicesFiled 1995·Granted Jun 3, 1997·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →