Inventor · disambiguated record
Joseph P. Caulfield
Also filed as: CAULFIELD JOSEPH P · CAULFIELD JOSEPH PATRICK
10 granted patents·907 citations·filing 1997–2002
93Inventor score
Files withAPPLIED MATERIALS INC8
Top patents by PatentIndex Score
10 records- 0195US6602434B1Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process windowAPPLIED MATERIALS INC·Filed 1999·Granted Aug 5, 2003·280 cites·54 claims
- 0294US6797189B2Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbonFiled 1999·Granted Sep 28, 2004·217 cites·29 claims
- 0389US6174451B1Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbonsAPPLIED MATERIALS INC·Filed 1998·Granted Jan 16, 2001·94 cites·52 claims
- 0487US6387287B1Process for etching oxide using a hexafluorobutadiene and manifesting a wide process windowAPPLIED MATERIALS INC·Filed 1999·Granted May 14, 2002·94 cites·18 claims
- 0584US6380096B2In-situ integrated oxide etch process particularly useful for copper dual damasceneAPPLIED MATERIALS INC·Filed 1998·Granted Apr 30, 2002·96 cites·24 claims
- 0679US6849193B2Highly selective process for etching oxide over nitride using hexafluorobutadieneFiled 2002·Granted Feb 1, 2005·23 cites·41 claims
- 0777US6613691B1Highly selective oxide etch process using hexafluorobutadieneAPPLIED MATERIALS INC·Filed 2000·Granted Sep 2, 2003·17 cites·13 claims
- 0874US5965035ASelf aligned contact etch using difluoromethane and trifluoromethaneAPPLIED MATERIALS INC·Filed 1997·Granted Oct 12, 1999·46 cites·9 claims
- 0959US6329292B1Integrated self aligned contact etchAPPLIED MATERIALS INC·Filed 1998·Granted Dec 11, 2001·25 cites·4 claims
- 1047US6544429B1Enhancement of silicon oxide etch rate and substrate selectivity with xenon additionAPPLIED MATERIALS INC·Filed 1999·Granted Apr 8, 2003·15 cites·34 claims
Join the waitlist — get patent alerts
Get an alert when Joseph P. Caulfield files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →