Inventor · disambiguated record
Jongwan Choi
Also filed as: CHOI JONGWAN
8 granted patents·1 pending application·409 citations·filing 2010–2021
86Inventor score
Top patents by PatentIndex Score
9 records- 0195US10529554B2Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenchesASM IP HOLDING BV·Filed 2017·Granted Jan 7, 2020·377 cites·13 claims
- 0293US8883611B2Methods of fabricating semiconductor devices having air gaps in dielectric layersLEE BO-YOUNG·Filed 2012·Granted Nov 11, 2014·18 cites·18 claims
- 0390US11823866B2Thin film forming methodASM IP HOLDING BV·Filed 2021·Granted Nov 21, 2023·3 cites·14 claims
- 0481US11676812B2Method for forming silicon nitride film selectively on top/bottom portionsASM IP HOLDING BV·Filed 2020·Granted Jun 13, 2023·1 cites·10 claims
- 0579US9196630B2Semiconductor devices having carbon-contained porous insulation over gate stack structuresLEE BO-YOUNG·Filed 2014·Granted Nov 24, 2015·4 cites·5 claims
- 0674US9780113B2Method for fabricating semiconductor device including a first ILD with sloped surface on a stacked structure and a second ILD on the first ILDIM JIWOON·Filed 2015·Granted Oct 3, 2017·4 cites·20 claims
- 0772US10720322B2Method for forming silicon nitride film selectively on top surfaceASM IP HOLDING BV·Filed 2018·Granted Jul 21, 2020·1 cites·5 claims
- 0862US9281361B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 8, 2016·1 cites·7 claims
- 0934US2010230741A1Semiconductor devices with an air gap in trench isolation dielectricSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →