Inventor · disambiguated record
John H. Givens
Also filed as: GIVENS III JOHN H · GIVENS JOHN H · GIVENS JOHN HOWARD
54 granted patents·3 pending applications·1,173 citations·filing 1981–2022
99Inventor score
Top patents by PatentIndex Score
57 records- 0191US5268330AProcess for improving sheet resistance of an integrated circuit device gateIBM·Filed 1992·Granted Dec 7, 1993·131 cites·37 claims
- 0288US5658438ASputter deposition method for improved bottom and side wall coverage of high aspect ratio featuresMICRON TECHNOLOGY INC·Filed 1995·Granted Aug 19, 1997·79 cites·24 claims
- 0386US6060386AMethod and apparatus for forming features in holes, trenches and other voids in the manufacturing of microelectronic devicesMICRON TECHNOLOGY INC·Filed 1997·Granted May 9, 2000·82 cites·49 claims
- 0484US5055169AMethod of making mixed metal oxide coated substratesUS ARMY·Filed 1989·Granted Oct 8, 1991·64 cites·10 claims
- 0584USD269839SBarbecue grillGIVENS III JOHN H·Filed 1981·Granted Jul 26, 1983·22 cites·1 claims
- 0683US6267852B1Method of forming a sputtering apparatusMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 31, 2001·18 cites·39 claims
- 0783US5545581APlug strap process utilizing selective nitride and oxide etchesIBM·Filed 1994·Granted Aug 13, 1996·71 cites·31 claims
- 0881US5985103AMethod for improved bottom and side wall coverage of high aspect ratio featuresMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 16, 1999·61 cites·67 claims
- 0980US6057231AMethod for improved metal fill by treatment of mobility layersMICRON TECHNOLOGY INC·Filed 1999·Granted May 2, 2000·40 cites·50 claims
- 1080US5956612ATrench/hole fill processes for semiconductor fabricationMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 21, 1999·58 cites·80 claims
- 1179US5726100AMethod of forming contact vias and interconnect channels in a dielectric layer stack with a single maskMICRON TECHNOLOGY INC·Filed 1996·Granted Mar 10, 1998·58 cites·30 claims
- 1278US6812139B2Method for metal fill by treatment of mobility layersMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 2, 2004·17 cites·20 claims
- 1378US6080655AMethod for fabricating conductive components in microelectronic devices and substrate structures thereofMICRON TECHNOLOGY INC·Filed 1997·Granted Jun 27, 2000·47 cites·43 claims
- 1476US6091148AElectrical connection for a semiconductor structureMICRON TECHNOLOGY INC·Filed 1997·Granted Jul 18, 2000·45 cites·24 claims
- 1576US5807467AIn situ preclean in a PVD chamber with a biased substrate configurationMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 15, 1998·37 cites·25 claims
- 1669US6054768AMetal fill by treatment of mobility layersMICRON TECHNOLOGY INC·Filed 1997·Granted Apr 25, 2000·24 cites·31 claims
- 1768US6060385AMethod of making an interconnect structureMICRON TECHNOLOGY INC·Filed 1997·Granted May 9, 2000·28 cites·36 claims
- 1867US6482735B1Method for improved metal fill by treatment of mobility layersMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 19, 2002·23 cites·26 claims
- 1966US5980657AAlloy for enhanced filling of high aspect ratio dual damascene structuresMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 9, 1999·27 cites·10 claims
- 2065US6087711AIntegrated circuit metallization with superconductor BEOL wiringMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 11, 2000·26 cites·40 claims
- 2165US2025010431A1Polishing fluid recovery and reuse system for semiconductor substrate processingAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2264US6461963B1Utilization of disappearing silicon hard mask for fabrication of semiconductor structuresMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 8, 2002·6 cites·9 claims
- 2363US6200895B1Method of forming an electrical connectionMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 13, 2001·26 cites·21 claims
- 2462US6984874B2Semiconductor device with metal fill by treatment of mobility layers including forming a refractory metal nitride using TMEDTMICRON TECHNOLOGY INC·Filed 2004·Granted Jan 10, 2006·6 cites·20 claims
- 2561US6774035B2Thermal processing of metal alloys for an improved CMP process in integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 10, 2004·7 cites·17 claims
- 2659US6689693B2Methods for utilization of disappearing silicon hard mask for fabrication of semiconductor structuresMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 10, 2004·4 cites·18 claims
- 2759US6537903B2Processing methods for providing metal-comprising materials within high aspect ratio openingsMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 25, 2003·6 cites·25 claims
- 2857US6784550B2Thermal processing of metal alloys for an improved CMP process in integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 31, 2004·5 cites·27 claims
- 2956US6051121ADeposition chamber with a biased substrate configurationMICRON TECHNOLOGY INC·Filed 1998·Granted Apr 18, 2000·10 cites·20 claims
- 3053US6534408B2Utilization of disappearing silicon hard mask for fabrication of semiconductor structuresMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 18, 2003·2 cites·18 claims
- 3153US6316360B1High aspect ratio metallization structures for shallow junction devices, and methods of forming the sameMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 13, 2001·16 cites·17 claims
- 3250US6396119B1Reduced RC delay between adjacent substrate wiring linesMICRON TECHNOLOGY INC·Filed 2000·Granted May 28, 2002·2 cites·23 claims
- 3350US6271593B1Method for fabricating conductive components in microelectronic devices and substrate structures thereforMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 7, 2001·13 cites·10 claims
- 3449US6781235B1Three-level unitary interconnect structureMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 24, 2004·2 cites·33 claims
- 3549US6404053B2Utilization of energy absorbing layer to improve metal flow and fill in a novel interconnect structureMICRON TECHNOLOGY INC·Filed 1999·Granted Jun 11, 2002·13 cites·46 claims
- 3646US6790764B2Processing methods for providing metal-comprising materials within high aspect ratio openingsMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 14, 2004·1 cites·22 claims
- 3746US5835987AReduced RC delay between adjacent substrate wiring linesMICRON TECHNOLOGY INC·Filed 1996·Granted Nov 10, 1998·8 cites·6 claims
- 3845US6787447B2Semiconductor processing methods of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 7, 2004·1 cites·31 claims
- 3945US6320261B1High aspect ratio metallization structures for shallow junction devices, and methods of forming the sameMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 20, 2001·10 cites·17 claims
- 4044US6787472B2Utilization of disappearing silicon hard mask for fabrication of semiconductor structuresMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 7, 2004·0 cites·19 claims
- 4144US6316356B1Thermal processing of metal alloys for an improved CMP process in integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 13, 2001·8 cites·31 claims
- 4244US6309946B1Reduced RC delay between adjacent substrate wiring linesMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 30, 2001·7 cites·38 claims
- 4344US6297156B1Method for enhanced filling of high aspect ratio dual damascene structuresMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 2, 2001·9 cites·30 claims
- 4444US5776828AReduced RC delay between adjacent substrate wiring linesMICRON TECHNOLOGY INC·Filed 1996·Granted Jul 7, 1998·7 cites·6 claims
- 4543US2005230832A1Three-level unitary interconnect structureMICRON TECHNOLOGY INC·Filed 2004·Application pending·0 cites
- 4642US6133133AMethod for making an electrical contact to a node location and process for forming a conductive line or other circuit componentMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 17, 2000·6 cites·15 claims
- 4742US5888896AMethod for making an electrical contact to a node location and process for forming a conductive line or other circuit componentMICRON TECHNOLOGY INC·Filed 1996·Granted Mar 30, 1999·6 cites·13 claims
- 4841US6548883B2Reduced RC between adjacent substrate wiring linesMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 15, 2003·0 cites·20 claims
- 4941US5894169ALow-leakage borderless contacts to doped regionsIBM·Filed 1996·Granted Apr 13, 1999·8 cites·5 claims
- 5039US6319813B1Semiconductor processing methods of forming integrated circuitry and integrated circuitry constructionsMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 20, 2001·6 cites·6 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →