Inventor · disambiguated record
John Michael Hergenrother
Also filed as: HERGENROTHER JOHN M · HERGENROTHER JOHN MICHAEL
19 granted patents·2 pending applications·569 citations·filing 1998–2009
95Inventor score
Top patents by PatentIndex Score
21 records- 0195US6197641B1Process for fabricating vertical transistorsLUCENT TECHNOLOGIES INC·Filed 1999·Granted Mar 6, 2001·163 cites·23 claims
- 0292US6027975AProcess for fabricating vertical transistorsLUCENT TECHNOLOGIES INC·Filed 1998·Granted Feb 22, 2000·152 cites·25 claims
- 0390US6653181B2CMOS integrated circuit having vertical transistors and a process for fabricating sameAGERE SYSTEMS INC·Filed 2002·Granted Nov 25, 2003·60 cites·34 claims
- 0489US6821851B2Method of making ultra thin body vertical replacement gate MOSFETAGERE SYSTEMS INC·Filed 2003·Granted Nov 23, 2004·43 cites·15 claims
- 0586US7595247B2Halo-first ultra-thin SOI FET for superior short channel controlIBM·Filed 2007·Granted Sep 29, 2009·11 cites·11 claims
- 0685US7374998B2Selective incorporation of charge for transistor channelsIBM·Filed 2006·Granted May 20, 2008·11 cites·16 claims
- 0785US6635924B1Ultra thin body vertical replacement gate MOSFETAGERE SYSTEMS INC·Filed 2002·Granted Oct 21, 2003·32 cites·5 claims
- 0882US6518622B1Vertical replacement gate (VRG) MOSFET with a conductive layer adjacent a source/drain region and method of manufacture thereforAGERE SYSTEMS INC·Filed 2000·Granted Feb 11, 2003·35 cites·24 claims
- 0979US6903411B1Architecture for circuit connection of a vertical transistorAGERE SYSTEMS INC·Filed 2000·Granted Jun 7, 2005·29 cites·19 claims
- 1078US6828628B2Diffused MOS devices with strained silicon portions and methods for forming sameAGERE SYSTEMS INC·Filed 2003·Granted Dec 7, 2004·25 cites·20 claims
- 1170US7859061B2Halo-first ultra-thin SOI FET for superior short channel controlIBM·Filed 2009·Granted Dec 28, 2010·3 cites·9 claims
- 1263US7696057B2Method for co-alignment of mixed optical and electron beam lithographic fabrication levelsIBM·Filed 2007·Granted Apr 13, 2010·2 cites·20 claims
- 1361US7314790B2Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strainIBM·Filed 2006·Granted Jan 1, 2008·1 cites·15 claims
- 1454US7943486B2Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strainIBM·Filed 2008·Granted May 17, 2011·0 cites·11 claims
- 1553US7687863B2Selective incorporation of charge for transistor channelsIBM·Filed 2008·Granted Mar 30, 2010·0 cites·7 claims
- 1653US7462525B2Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strainIBM·Filed 2007·Granted Dec 9, 2008·0 cites·10 claims
- 1751US2009305471A1Thin silicon single diffusion field effect transistor for enhanced drive performance with stress film linersIBM·Filed 2009·Application pending·0 cites
- 1849US7161169B2Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strainIBM·Filed 2004·Granted Jan 9, 2007·2 cites·7 claims
- 1947US8120138B2High-Z structure and method for co-alignment of mixed optical and electron beam lithographic fabrication levelsFRIED DAVID MICHAEL·Filed 2009·Granted Feb 21, 2012·0 cites·30 claims
- 2045US7550361B2Trench structure and method for co-alignment of mixed optical and electron beam lithographic fabrication levelsIBM·Filed 2007·Granted Jun 23, 2009·0 cites·21 claims
- 2145US2007158743A1Thin silicon single diffusion field effect transistor for enhanced drive performance with stress film linersIBM·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →